J212 MICROSS | Alldatasheet
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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J212 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐ 55°C to +150°C Operating Junction Temperature ‐ 55°C to +135°C Maximum Power Dissipation Continuous Power Dissipation 360mW Derating over temperature 3.27 mW/°C MAXIMUM CURRENT Gate Current (Note 1) 10mA MAXIMUM VOLTAGES Gate to Drain Voltage or Gate to Source Voltage ‐ 25V J212 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐ 25 ‐‐ ‐‐ V VDS = 0V, IG = ‐1µA VGS(off) Gate to Source Cutoff Voltage ‐ 4 ‐‐ ‐ 6 VDS = 15V, ID = 1nA IDSS Drain to Source Saturation Current (Note 2) 15 ‐‐ 40 mA VDS = 15V, VGS = 0V IGSS Gate Reverse Current (Note 3) ‐‐ ‐‐ ‐ 100 pA VDS = 0V, VGS = ‐15V IG Gate Operating Current (Note 3) ‐‐ ‐ 10 ‐‐ pA VDS = 10V, ID = 1mA rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 50 Ω IG = 1mA, VDS = 0V J212 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS gfs Forward Transconductance 7000 ‐‐ 12000 µmho VDS = 15V, VGS = 0V , f = 1kHz gos Output Conductance ‐‐ ‐‐ 200 Ciss Input Capacitance ‐‐ 4 ‐‐ pF VDS = 15V, VGS = 0V , f = 1MHz Crss Reverse Transfer Capacitance ‐‐ 1 ‐‐ en Equivalent Noise Voltage ‐‐ 10 ‐‐ nV/√Hz VDS = 15V, VGS = 0V , f = 1kHz J212 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC UNITS CONDITIONS td(on) Turn On Time 2 ns VDD = 10V VGS(H) = 0V See Switching Circuit tr Turn On Rise Time 2 td(off) Turn Off Time 6 tf Turn Off Fall Time 15 J212 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J212 The J212 is a n-channel JFET General Purpose amplifier with low noise and low leakage. The SOT-23 package is well suited for cost sensitive applications and mass production. (See Packaging Information). J212 Applications: General Purpose Amplifiers UHV / VHF Amplifiers Mixers Oscillators J212 Benefits: High gain Low Leakage Low Noise Micross Components Europe Available Packages: J212 in SOT-23 J212 in bare die. Please contact Micross for full package and die dimensions Note 1 ‐ Absolute maximum ratings are limiting values above which J212 serviceability may be impaired. Note 2 ‐ Pulse test duration = 2ms Note 3 – Approximately doubles for every 10°C increase in TA Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution SOT-23 (Top View)