J111 NJSEMI | Alldatasheet

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, U na. 20 STERN ME. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 N-channel silicon field-effect transistors J111; J112; J113

DESCRIPTION

Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc.

FEATURES

  • High speed switching
  • Interchangeability of drain and source connections
  • Low RDS on atzero Qate voltage PINNING 1 = gate 2 = source 3 = drain Fig.1 Simplified outline and symbol, TO-92. Note: Drain and source are interchangeable. QUICK REFERENCE DATA Drain-source voltage Drain current VDS=15V;VGS = 0 Total power dissipation up to Tamb = 50 °C Gate-source cut-off voltage VDS = 5 V; ID = 1 uA Drain-source on-state resistance VDS = 0.1 V;VGS = 0 ±VDS max. IDSS m'n- Ptot max. min. ~VGSoff max. RDS on max- J111 400 J112 400 J113 40 V 2 mA 400 mW 0.5 V 3 V 100 n NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

N-channel silicon field-effect transistors J111; J112; J113 RATINGS Limiting values in accordance with the Absolute Drain-source voltage Gate-source voltage Gate-drain voltage Gate forward current (DC) Total power dissipation up to Tamb = 50 °C Storage temperature range Junction temperature Maximum ±VDS ~VGSO -VGDO IG Pfot Tstg Tj System (EC 134) max. max. max. max. max. max. 40 V 40 V 40 V 50 mA 400 mW -65 to +150 °C 150 °C THERMAL RESISTANCE From junction to ambient in free air STATIC CHARACTERISTICS TJ = 25 °C unless otherwise specified Mh j-a

250 K/W

-VGS=15V;VDS = 0 Drain cut-off current VDS = 5V;-VGS = 10V Drain saturation current VDS=15V;VGS = 0 Gate-source breakdown voltage -IG = 1 nA; VDS = 0 Gate-source cut-off voltage VDS = 5 V; ID = 1 nA Drain-source on-state resistance VDS = 0.1 V;VGS = 0 -loss rnax. -IDSX max. IDSS mm- ~V(BR)GSS min- min. ~VGs off max. Roson max. J111 J112 J113 1 nA 1 nA 2 mA 40 V 0.5 V 3 V 100 Q