J111_TO-92 MICROSS | Alldatasheet
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FEATURES
DIRECT REPLACEMENT FOR SILICONIX J111 LOW GATE LEAKAGE CURRENT 5pA FAST SWITCHING t(on) ≤ 4ns ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐ 55°C to +150°C Operating Junction Temperature ‐ 55°C to +135°C Maximum Power Dissipation Continuous Power Dissipation 360mW MAXIMUM CURRENT Gate Current (Note 1) 50mA MAXIMUM VOLTAGES Gate to Drain Voltage VGDS = ‐35V Gate to Source Voltage VGSS = ‐35V J111 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐ 35 ‐‐ ‐‐ V IG = 1µA, VDS = 0V VGS(off) Gate to Source Cutoff Voltage ‐ 3 ‐‐ ‐ 10 VDS = 5V, ID = 1µA VGS(F) Gate to Source Forward Voltage ‐‐ 0.7 ‐‐ IG = 1mA, VDS = 0V IDSS Drain to Source Saturation Current (Note 2) 20 ‐‐ ‐‐ mA VDS = 15V, VGS = 0V IGSS Gate Reverse Current ‐‐ ‐ 0.005 ‐ 1 nA VGS = ‐15V, VDS = 0V IG Gate Operating Current ‐‐ ‐ 0.5 ‐‐ pA VDG = 15V, ID = 10mA ID(off) Drain Cutoff Current ‐‐ 0.005 1 nA VDS = 5V, VGS = ‐10V rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 30 Ω IG = 1mA, VDS = 0V J111 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS gfs Forward Transconductance ‐‐ 6 ‐‐ mS VDS = 20V, ID = 1mA , f = 1kHz gos Output Conductance ‐‐ 25 ‐‐ µS rDS(on) Drain to Source On Resistance ‐‐ ‐‐ 30 Ω VGS = 0V, ID = 0mA, f = 1kHz Ciss Input Capacitance ‐‐ 7 12 pF VDS = 0V, VGS = ‐10V, f = 1MHz Crss Reverse Transfer Capacitance ‐‐ 3 5 en Equivalent Noise Voltage ‐‐ 3 ‐‐ nV/√Hz VDG = 10V, ID = 1mA , f = 1kHz J111 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC UNITS CONDITIONS td(on) Turn On Time 2 ns VDD = 10V VGS(H) = 0V See Switching Circuit tr Turn On Rise Time 2 td(off) Turn Off Time 6 tf Turn Off Fall Time 15 J111 SWITCHING CIRCUIT PARAMETERS VGS(L) ‐ 12V RL 800Ω ID(on) 12mA J111 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J111 This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The TO-92 package is well suited for cost sensitive applications and mass production. (See Packaging Information). J111 Applications: Analog Switches Commutators Cho ppers J111 Benefits: Short Sample & Hold Aperture Time Low insertion loss Low Noise Micross Components Europe Available Packages: J111 in TO-92 J111 in bare die. Please contact Micross for full package and die dimensions Note 1 ‐ Absolute maximum ratings are limiting values above which J111 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3% Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution SWITCHING TEST CIRCUIT TO-92 (Bottom View)