IPW90R500C3 INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • Lowest figure-of-merit RON x Qg
  • Extreme dv/dt rated
  • High peak current capability
  • Qualified according to JEDEC1) for target applications
  • Pb-free lead plating; RoHS compliant
  • Ultra low gate charge CoolMOS™ 900V is designed for:
  • Quasi Resonant Flyback / Forward topologies
  • PC Silverbox and consumer applications
  • Industrial SMPS Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C A T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=2.2 A, V DD=50 V 388 mJ Avalanche energy, repetitive t AR 2),3) E AR I D=2.2 A, V DD=50 V Avalanche current, repetitive t AR 2),3) I AR A MOSFET dv /dt ruggedness d v /dt V DS=0...400 V V/ns Gate source voltage V GS static V AC (f>1 Hz) Power dissipation P tot T C=25 °C W Operating and storage temperature T J, T stg °C Mounting torque M3 and M3.5 screws 60 Ncm Value 6.8 ±30 156 -55 ... 150 0.74 2.2 ±20 V DS @ T J=25°C 900 V R DS(on),max @ T J= 25°C 0.5 Ω Q g,typ 68 nC Product Summary Type Package Marking IPW90R500C3 PG-TO247 9R500C PG-TO247 Rev. 1.0 page 1 2008-07-29 Please note the new package dimensions arccording to PCN 2009-134-A

Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous diode forward current I S A Diode pulse current2) I S,pulse 23 Reverse diode dv /dt 4) dv /dt 4 V/ns Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 0.8 K/W R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C Electrical characteristics, at T J=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 900 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=0.74 mA 2.5 3 3.5 Zero gate voltage drain current I DSS V DS=900 V, V GS=0 V, T j=25 °C --1 µ A V DS=900 V, V GS=0 V, T j=150 °C -1 0- Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=6.6 A, T j=25 °C - 0.39 0.5 Ω V GS=10 V, I D=6.6 A, T j=150 °C - 1.1 - Gate resistance R G f =1 MHz, open drain - 1.3 - Ω Values Thermal resistance, junction - ambient Value T C=25 °C 6.6 Rev. 1.0 page 2 2008-07-29 Please note the new package dimensions arccording to PCN 2009-134-A

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 1700 - pF Output capacitance C oss -8 3- Effective output capacitance, energy related 5) C o(er) -5 2- Effective output capacitance, time related 6) C o(tr) - 200 - Turn-on delay time t d(on) -7 0- n s Rise time t r -2 0- Turn-off delay time t d(off) - 400 - Fall time t f -2 5- Gate Charge Characteristics Gate to source charge Q gs -8- n C Gate to drain charge Q gd -2 9- Gate charge total Q g - 68 tbd Gate plateau voltage V plateau - 4.6 - V Reverse Diode Diode forward voltage V SD V GS=0 V, I F=6.6 A, T j=25 °C - 0.8 1.2 V Reverse recovery time t rr - 480 - ns Reverse recovery charge Q rr - 8.5 - µC Peak reverse recovery current I rrm -3 1- A 5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 50% V DSS. 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 50% V DSS. Values V GS=0 V, V DS=100 V, f =1 MHz V DD=400 V, V GS=10 V, I D=6.6 A, R G=30.9 Ω V DD=400 V, I D=6.6 A, V GS=0 to 10 V V GS=0 V, V DS=0 V to 500 V 4) ISD≤ID, di/dt≤ 200 A/µs, VDClink=400V, Vpeak<V(BR)DSS, TJ<TJ,max, identical low side and high side switch V R=400 V, I F=I S, di F/dt =100 A/µs 2) Pulse width t p limited by T J,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 1) J-STD20 and JESD22 Rev. 1.0 page 3 2008-07-29 Please note the new package dimensions arccording to PCN 2009-134-A

1 Power dissipation 2 Safe operating area

P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 3 Max. transient thermal impedance 4 Typ. output characteristics Z thJC=f(tP) I D=f(V DS); T J=25 °C parameter: D=t p/T parameter: V GS 100 120 140 160 0 25 50 75 100 125 150 T C [°C] P tot [W] 1 µs 10 µs 100 µs 1 ms 10 ms DC 102 101 100 10-1 1 10 100 1000 V DS [V] I D [A] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-110-210-310-410-5 100 10-1 10-2 t p [s] Z thJC [K/W] 4 V 4.5 V 5 V 5.5 V 6 V 8 V 10 V 20 V 0 5 10 15 20 25 V DS [V] I D [A] limited by on-state resistance Rev. 1.0 page 4 2008-07-29 Please note the new package dimensions arccording to PCN 2009-134-A

5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T J=150 °C R DS(on)=f(I D); T J=150 °C parameter: V GS parameter: V GS 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T J); I D=6.6 A; V GS=10 V I D=f(V GS); V DS=20V parameter: T J typ 98 % 0.3 0.6 0.9 1.2 1.5 -60 -20 20 60 100 140 180 T J [°C] R DS(on) [Ω ] 25 °C 150 °C 02468 1 0 V GS [V] I D [A] 4 V 4.5 V 5 V 6 V 8 V 10 V 20 V 0 5 10 15 20 25 V DS [V] I D [A] 4 V 4.5 V 4.8 V 5 V 10 V 0 5 10 15 20 25 I D [A] R DS(on) [Ω ] Rev. 1.0 page 5 2008-07-29 Please note the new package dimensions arccording to PCN 2009-134-A

9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=6.6 A pulsed I F=f(V SD) parameter: V DD parameter: T J

11 Avalanche energy 12 Drain-source breakdown voltage

E AS=f(T J); I D=2.2 A; V DD=50 V V BR(DSS)=f(T J); I D=0.25 mA 25 °C 150 °C 25 °C, 98% 150 °C, 98% 102 101 100 10-1 0 0.5 1 1.5 2 V SD [V] I F [A]

400 V 720 V

Q gate [nC] V GS [V] 800 850 900 950 1000 1050 -60 -20 20 60 100 140 180 T J [°C] V BR(DSS) [V] 100 200 300 400 25 50 75 100 125 150 T J [°C] E AS [mJ] Rev. 1.0 page 6 2008-07-29 Please note the new package dimensions arccording to PCN 2009-134-A

13 Typ. capacitances 14 Typ. C oss stored energy C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS) 0 100 200 300 400 500 600 V DS [V] E oss [µJ] Ciss Coss Crss 100 1000 10000 0 100 200 300 400 500 600 V DS [V] C [pF] Rev. 1.0 page 7 2008-07-29 Please note the new package dimensions arccording to PCN 2009-134-A

Definition of diode switching characteristics Rev. 1.0 page 8 2008-07-29 Please note the new package dimensions arccording to PCN 2009-134-A

Rev. 1.0 page 9 2008-07-29 Please note the new package dimensions arccording to PCN 2009-134-A

81726 Munich, Germany

© 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 10 2008-07-29 Please note the new package dimensions arccording to PCN 2009-134-A

New package outlines TO-247 Final Data Sheet Erratum Rev. 2.0, 2010-02-01

1 New package outlines TO-247

Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.) Figure 1 Outlines TO-247, dimensions in mm/inches