IPW65R070C6 INFINEON | Alldatasheet
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Technical content
Industrial & Multimarket Data Sheet Rev. 2.0, 2011-03-15 Final CoolMOS C6 650V CoolMOS™ C6 Power Transistor IPW65R070C6 MOSFET Metal Oxide Semiconductor Field Effect Transistor
650V CoolMOS™ C6 Power Transistor IPW65R070C6 Final Data Sheet 2 Rev. 2.0, 2011-03-15
1 Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series comb ines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSF ET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Features
- Extremely low losses due to very low FOM R dson*Qg and Eoss
- Very high commutation ruggedness
- Easy to use/drive
- Qualified for industrial grade applications according to JEDEC
- Pb-free plating, Halogen free mold compound
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, LCD & PDP TV, Lighting, Server, Telecom, UPS and Solar. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. 1) J-STD20 and JESD22 Table 1 Key Performance Parameters Parameter Value Unit Related Links VDS @ Tj,max 700 V IFX CoolMOS Webpage RDS(on),max 0.07 IFX Design tools Qg,typ 170 nC ID,pulse 150 A Eoss @ 400V 13 µJ Body diode di/dt 300 A/µs Type Package Marking IPW65R070C6 PG-TO247 65C6070
650V CoolMOS™ C6 Power Transistor IPW65R070C6 Table of Contents Final Data Sheet 3 Rev. 2.0, 2011-03-15 Table of Contents
650V CoolMOS™ C6 Power Transistor IPW65R070C6 Maximum ratings Final Data Sheet 4 Rev. 2.0, 2011-03-15
2 Maximum ratings
at Tj = 25 °C, unless otherwise specified.
3 Thermal characteristics
Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Continuous drain current1) 1) Limited by Tj,max. Maximum duty cycle D=0.75 ID -- 5 3 . 5 A TC= 25 °C
33.8 TC= 100°C
Pulsed drain current2) 2) Pulse width tp limited by Tj,max ID,pulse -- 1 5 0 A TC=25 °C Avalanche energy, single pulse EAS - - 1160 mJ ID=9.3 A,VDD=50 V Avalanche energy, repetitive EAR - - 1.76 ID=9.3 A,VDD=50 V Avalanche current, repetitive IAR -- 9 . 3 A MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480 V Gate source voltage VGS -20 - 20 V static -30 30 AC (f>1 Hz) Power dissipation Ptot -- 3 9 1 W TC=25 °C Operating and storage temperature Tj,Tstg -55 - 150 °C Mounting torque - - 60 Ncm M3 and M3.5 screws Continuous diode forward current I S -- 4 6 . 3 A TC=25 °C Diode pulse current2) IS,pulse -- 1 5 0 A TC=25 °C Reverse diode dv/dt3) 3) Identical low side and high side switch with identical RG; Vpeak<V(BR)DSS ; Tj<Tj.max dv/dt - - 15 V/ns VDS=0...400 V, ISD ID, Tj=25 °C Maximum diode commutation speed3) dif/dt - - 300 A/µs Table 3 Thermal characteristics TO-247 Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Thermal resistance, junction - case RthJC - - 0.32 °C/W Thermal resistance, junction - ambient RthJA - - 62 leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10 s
650V CoolMOS™ C6 Power Transistor IPW65R070C6
Electrical characteristics
Final Data Sheet 5 Rev. 2.0, 2011-03-15
4 Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified. Table 4 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 650 - - V VGS=0 V, ID=1.0 mA Gate threshold voltage VGS(th) 2.5 3 3.5 VDS=VGS, ID=1.76 mA Zero gate voltage drain current IDSS -- 1µ A VDS=650 V, VGS=0 V, Tj=25 °C -5 0 - VDS=650 V, VGS=0 V, Tj=150 °C Gate-source leakage current IGSS - - 100 nA VGS=20 V, VDS=0 V Drain-source on-state resistance RDS(on) - 0.063 0.07 VGS=10 V, ID=17.6 A, Tj=25 °C -0 . 1 6 4 - VGS=10 V, ID=17.6 A, Tj=150 °C Gate resistance RG -0 . 8 5 - f=1 MHz, open drain Table 5 Dynamic characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Input capacitance Ciss -3 9 0 0 - p F VGS=0 V, VDS=100 V, f=1 MHzOutput capacitance Coss -2 1 5 - Effective output capacitance, energy related1) 1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS Co(er) -1 4 0 - VGS=0 V, VDS=0...480 V Effective output capacitance, time related2) 2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS Co(tr) -6 7 0 - ID=constant, VGS=0 V VDS=0...480V Turn-on delay time td(on) -1 7 - n s VDD=400 V, VGS=13 V, ID=26.3 A, RG=1 . 8 Rise time tr -1 7 - Turn-off delay time td(off) -9 0 - Fall time tf -6-
650V CoolMOS™ C6 Power Transistor IPW65R070C6 Final Data Sheet 6 Rev. 2.0, 2011-03-15 Table 6 Gate charge characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Gate to source charge Qgs -2 0 - n C VDD=480 V, ID=26.3 A, VGS=0 to 10 V Gate to drain charge Qgd -8 5 - Gate charge total Qg -1 7 0 - Gate plateau voltage Vplateau -5 . 5 - V Table 7 Reverse diode characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Diode forward voltage VSD -0 . 9 - V VGS=0 V, IF=26.3 A, Tj=25 °C Reverse recovery time trr -7 3 0 - n s VR=400 V, IF=26.3 A, diF/dt=100 A/µsReverse recovery charge Qrr -1 9 - µ C Peak reverse recovery current Irrm -5 0 - A
650V CoolMOS™ C6 Power Transistor IPW65R070C6 Electrical characteristics diagrams Final Data Sheet 7 Rev. 2.0, 2011-03-15
5 Electrical characteristics diagrams
Power dissipation Max. transient thermal impedance Ptot = f(TC) Z(thJC)=f(tp); parameter: D=tp/T Table 9 Safe operating area TC=25 °C Safe operating area TC=80 °C ID=f(VDS); TC=25 °C; VGS > 7V; D=0; parameter tp ID=f(VDS); TC=80°C; VGS > 7V; D=0; parameter tp
650V CoolMOS™ C6 Power Transistor IPW65R070C6 Electrical characteristics diagrams Final Data Sheet 8 Rev. 2.0, 2011-03-15 Table 10 Typ. output characteristics Tj=25 °C Typ. output characteristics Tj=125 °C ID=f(VDS); Tj=25 °C; parameter: VGS ID=f(VDS); Tj=125 °C; parameter: VGS Table 11 Typ. drain-source on-state resistance Drain-source on-state resistance RDS(on)=f(ID); Tj=125 °C; parameter: VGS RDS(on)=f(Tj); ID=17.6 A; VGS=10 V
650V CoolMOS™ C6 Power Transistor IPW65R070C6 Electrical characteristics diagrams Final Data Sheet 9 Rev. 2.0, 2011-03-15 Table 12 Typ. transfer characteristics Typ. gate charge ID=f(VGS); VDS=20V VGS=f(Qgate), ID=26.3 A pulsed Table 13 Avalanche energy Drain-source breakdown voltage EAS=f(Tj); ID=9.3 A; VDD=50 V VBR(DSS)=f(Tj); ID=1.0 mA
650V CoolMOS™ C6 Power Transistor IPW65R070C6 Electrical characteristics diagrams Final Data Sheet 10 Rev. 2.0, 2011-03-15 Table 14 Typ. capacitances Typ. Coss stored energy C=f(VDS); VGS=0 V; f=1 MHz EOSS=f(VDS) Table 15 Forward characteristics of reverse diode IF=f(VSD); parameter: Tj
650V CoolMOS™ C6 Power Transistor IPW65R070C6 Package outlines Final Data Sheet 11 Rev. 2.0, 2011-03-15
6 Package outlines
Figure 1 Outlines TO-247, dimensions in mm/inches
650V CoolMOS™ C6 Power Transistor IPW65R070C6
Revision History
Final Data Sheet 12 Rev. 2.0, 2011-03-15
7 Revision History
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2011-03-15 Published by Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in th is document shall in no event be rega rded as a guarantee of conditions or characteristics. With respect to any ex amples or hints given herein, any typi cal values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or s ystem or to affect the safe ty or effectiveness of that device or system. Life support devices or systems are inte nded to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Revision History: 2011-03-15, Rev. 2.0 Previous Revision: Revision Subjects (major ch anges since last revision)