IPW65R041CFD7 INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • Ultra-fastbodydiode
  • 650Vbreakdownvoltage
  • Best-in-classRDS(on)
  • Reducedswitchinglosses
  • LowRDS(on)dependencyovertemperature Benefits
  • Excellenthardcommutationruggedness
  • Extrasafetymarginfordesignswithincreasedbusvoltage
  • Enablingincreasedpowerdensitysolutions
  • OutstandinglightloadefficiencyinindustrialSMPSapplications
  • ImprovedfullloadefficiencyinindustrialSMPSapplications
  • PricecompetitivenessoverpreviousCoolMOS™families Potentialapplications SuitableforSoftSwitchingtopologies Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications–Server, Telecom,EVCharging,Solar Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 41 mΩ Qg,typ 102 nC ID,pulse 211 A Eoss @ 400V 14.0 µJ Body diode diF/dt 1300 A/µs Type/OrderingCode Package Marking RelatedLinks IPW65R041CFD7 PG-TO247-3 65R041F7 see Appendix A

650VCoolMOSªCFD7SJPowerDevice IPW65R041CFD7 Rev.2.1,2020-08-12Final Data Sheet TableofContents

650VCoolMOSªCFD7SJPowerDevice IPW65R041CFD7 Rev.2.1,2020-08-12Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID

32 A TC=25°C

TC=100°C Pulsed drain current2) ID,pulse - - 211 A TC=25°C Avalanche energy, single pulse EAS - - 248 mJ ID=6.4A; VDD=50V; see table 10 Avalanche energy, repetitive EAR - - 1.24 mJ ID=6.4A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 6.4 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 227 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - 60 Ncm M3 and M3.5 screws Continuous diode forward current1) IS - - 50 A TC=25°C Diode pulse current2) IS,pulse - - 211 A TC=25°C Reverse diode dv/dt3) dv/dt - - 70 V/ns VDS=0...400V,ISD<=24.8A,Tj=25°C see table 8 Maximum diode commutation speed diF/dt - - 1300 A/µs VDS=0...400V,ISD<=24.8A,Tj=25°C see table 8 Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min 1) Limited by Tj max. 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG

650VCoolMOSªCFD7SJPowerDevice IPW65R041CFD7 Rev.2.1,2020-08-12Final Data Sheet 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 0.55 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Thermal resistance, junction - ambient for SMD version RthJA - - - °C/W n.a. Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s

650VCoolMOSªCFD7SJPowerDevice IPW65R041CFD7 Rev.2.1,2020-08-12Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 650 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 3.5 4 4.5 V VDS=VGS,ID=1.24mA Zero gate voltage drain current1) IDSS 38 µA VDS=650V,VGS=0V,Tj=25°C VDS=650V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.034 0.076 0.041 - Ω VGS=10V,ID=24.8A,Tj=25°C VGS=10V,ID=24.8A,Tj=150°C Gate resistance RG - 3.8 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 4975 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 75 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related2) Co(er) - 175 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related3) Co(tr) - 1825 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 34 - ns VDD=400V,VGS=13V,ID=24.8A, RG=3.3Ω ;seetable9 Rise time tr - 12 - ns VDD=400V,VGS=13V,ID=24.8A, RG=3.3Ω ;seetable9 Turn-off delay time td(off) - 115 - ns VDD=400V,VGS=13V,ID=24.8A, RG=3.3Ω ;seetable9 Fall time tf - 3 - ns VDD=400V,VGS=13V,ID=24.8A, RG=3.3Ω ;seetable9 Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 28 - nC VDD=400V,ID=24.8A,VGS=0to10V Gate to drain charge Qgd - 31 - nC VDD=400V,ID=24.8A,VGS=0to10V Gate charge total Qg - 102 - nC VDD=400V,ID=24.8A,VGS=0to10V Gate plateau voltage Vplateau - 5.7 - V VDD=400V,ID=24.8A,VGS=0to10V 1) Maximum specification is defined by calculated six sigma upper confidence bound 2)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 3)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

650VCoolMOSªCFD7SJPowerDevice IPW65R041CFD7 Rev.2.1,2020-08-12Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 1.0 - V VGS=0V,IF=24.8A,Tj=25°C Reverse recovery time trr - 177 265.5 ns VR=400V,IF=24.8A,diF/dt=100A/µs; see table 8 Reverse recovery charge Qrr - 1.2 2.4 µC VR=400V,IF=24.8A,diF/dt=100A/µs; see table 8 Peak reverse recovery current Irrm - 11.8 - A VR=400V,IF=24.8A,diF/dt=100A/µs; see table 8

650VCoolMOSªCFD7SJPowerDevice IPW65R041CFD7 Rev.2.1,2020-08-12Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 100 150 200 250 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[°C/W] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T

650VCoolMOSªCFD7SJPowerDevice IPW65R041CFD7 Rev.2.1,2020-08-12Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 160 240 320 400 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 100 150 200 250 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 100 150 200 250 0.060 0.080 0.100 10 V 20 V 7 V 6.5 V 6 V 5.5 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[normalized] -50 -25 100 125 150 0.5 1.0 1.5 2.0 2.5 RDS(on)=f(Tj);ID=24.8A;VGS=10V

650VCoolMOSªCFD7SJPowerDevice IPW65R041CFD7 Rev.2.1,2020-08-12Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 100 150 200 250 300 350 400 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 115 120 V 400 V VGS=f(Qgate);ID=24.8Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10-1 100 101 102 125 °C 25 °C IF=f(VSD);parameter:Tj Diagram12:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 100 150 200 250 300 EAS=f(Tj);ID=6.4A;VDD=50V

650VCoolMOSªCFD7SJPowerDevice IPW65R041CFD7 Rev.2.1,2020-08-12Final Data Sheet Diagram13:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -50 -25 100 125 150 580 610 640 670 700 730 VBR(DSS)=f(Tj);ID=1mA Diagram14:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 100 101 102 103 104 105 Ciss Coss Crss C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 Eoss=f(VDS)

650VCoolMOSªCFD7SJPowerDevice IPW65R041CFD7 Rev.2.1,2020-08-12Final Data Sheet 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform VDS IF R g1 R g 2 R g1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

650VCoolMOSªCFD7SJPowerDevice IPW65R041CFD7 Rev.2.1,2020-08-12Final Data Sheet 6PackageOutlines MILLIMETERS 5.44 c Q E3E2 DED1D2 L1eLSP b1AA1bA2b20.38 6.045.35 1.003.403.85 20.7013.0815.500.51 3.5019.8012.38 6.306.25 17.65 2.605.1014.15 3.70 21.5016.30 20.40 1.35 4.50 1REVISION06 25.07.2018ISSUE DATE EUROPEAN PROJECTION0SCALE5mm DOCUMENT NO.Z8B00003327 DIMENSIONSMIN.MAX. 3:1234 Figure1OutlinePG-TO247-3,dimensionsinmm

650VCoolMOSªCFD7SJPowerDevice IPW65R041CFD7 Rev.2.1,2020-08-12Final Data Sheet 7AppendixA Table11RelatedLinks

  • IFXCoolMOSCFD7650VWebpage:www.infineon.com
  • IFXCoolMOSCFD7650Vapplicationnote:www.infineon.com
  • IFXCoolMOSCFD7650Vsimulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

650VCoolMOSªCFD7SJPowerDevice IPW65R041CFD7 Rev.2.1,2020-08-12Final Data Sheet RevisionHistory IPW65R041CFD7 Revision:2020-08-12,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2020-06-23 Release of final version 2.1 2020-08-12 Increased continuous diode forward current rating Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.