IPW65R040CM8

IPW65R040CM8 INFINEON | Alldatasheet

Document overview

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Technical content

Features

Fully qualified according to JEDEC for Industrial Applications Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key performance parameters Parameter Value Unit V @ T 700 V R 40 mΩ Q 80 nC I 230 A E @ 400V 9.1 μJ Body diode di /dt 1300 A/μs ESD class (HBM) 2 PG‑TO247‑3 Part number Package Marking Related links IPW65R040CM8 PG‑TO247‑3 65R040C8 see Appendix A Best in class 650V SJ MOSFET performance• Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness Integrated fast body diode and ESD protection• .XT interconnection technology for best in class thermal performance• Ease of use and fast design‑in through low ringing tendency and usage across PFC and PWM stages Simplified thermal management due to our advanced die attach technique Increased power density solutions enabled by using products with smaller footprint and higher manufacturing quality due state of the art ESD protection Suitable for a wide variety of applications and power ranges• Power supplies and converters • PFC stages & LLC resonant converters • High efficiency switching applications • e.g. Datacenter, AI Server, Telecom Power Supply• DS j,max DS(on),max g,typ D,pulse oss F Public IPW65R040CM8 Final datasheet Drain Pin 2, Tab Gate Pin 1 Source Pin 3 *1: Internal body diode

650V CoolMOS™ CM8 Power Transistor IPW65R040CM8 Public Datasheet 2 Revision 2.1 https://www.infineon.com 2025‑03‑07 Table of contents

650V CoolMOS™ CM8 Power Transistor IPW65R040CM8 Public Datasheet 3 Revision 2.1 https://www.infineon.com 2025‑03‑07

1 Maximum ratings

at = 25°C, unless otherwise specifiedT Table 2 Maximum ratings Parameter Symbol Values Unit Note / Test condition Min. Typ. Max. Continuous drain current 1) I ‑ ‑ A T =25°C

39 T =100°C

Pulsed drain current 2) I ‑ ‑ 230 A T =25°C Avalanche energy, single pulse E ‑ ‑ 135 mJ I =4.9A; V =50V; see table 10 Avalanche energy, repetitive E 0.68 Avalanche current, single pulse I ‑ ‑ 4.9 A ‑ MOSFET dv/dt ruggedness dv/dt ‑ ‑ 120 V/ns V =0...400V Gate source voltage (static) V ‑20 ‑ 20 V static; Gate source voltage (dynamic) V ‑30 ‑ 30 V AC (f>1 Hz) Power dissipation P ‑ ‑ 329 W T =25°C Storage temperature T ‑55 ‑ 150 °C ‑ Operating junction temperature T Extended operating junction temperature T 150 ‑ 175 °C ≤50 h in the application lifetime Mounting torque ‑ ‑ ‑ 60 Ncm M3 and M3.5 screws Continuous diode forward current I ‑ ‑ A T =25°C Diode pulse current 2) I 230 Reverse diode dv/dt 3) dv/dt ‑ ‑

70 V/ns

V =0...400V, ≤62A, =25°C see I T table 8Maximum diode commutation speed di /dt 1300 A/μs Insulation withstand voltage V ‑ ‑ n.a. V V , =25°C, =1minT t Limited by T1) Pulse width t limited by T2) Identical low side and high side switch with identical R3) j D C C D,pulse C AS D DD AR AS DS GS GS tot C stg j j S C S,pulse DS SD j F ISO rms C j,max p j,max G

650V CoolMOS™ CM8 Power Transistor IPW65R040CM8 Public Datasheet 4 Revision 2.1 https://www.infineon.com 2025‑03‑07

2 Thermal characteristics

Table 3 Thermal characteristics Parameter Symbol Values Unit Note / Test condition Min. Typ. Max. Thermal resistance, junction ‑ case R ‑ ‑ 0.38 K/W ‑ Thermal resistance, junction ‑ ambient R ‑ ‑ 62 K/W leaded Thermal resistance, junction ‑ ambient for SMD version R ‑ ‑ ‑ K/W ‑ Soldering temperature, wavesoldering only allowed at leads T ‑ ‑ 260 °C 1.6mm (0.063 in.) from case for 10s thJC thJA thJA sold

650V CoolMOS™ CM8 Power Transistor IPW65R040CM8 Public Datasheet 5 Revision 2.1 https://www.infineon.com 2025‑03‑07

3 Electrical characteristics

at =25°C, unless otherwise specifiedT Table 4 Static characteristics Parameter Symbol Values Unit Note / Test condition Min. Typ. Max. Drain‑source breakdown voltage V 650 ‑ ‑ V V =0V, =1mAI Gate threshold voltage V 3.7 4.2 4.7 V V = , =0.68mAV I Zero gate voltage drain current I ‑ ‑ 1 μA V =650V, =0V, =25°CV T Gate‑source leakage current I ‑ ‑ 0.1 μA V =20V, =0VV Drain‑source on‑state resistance R ‑ 0.033 0.040 Ω V =10V, =25.0A, =25°CI T Gate resistance R ‑ 1 ‑ Ω f=1MHz Table 5 Dynamic characteristics Parameter Symbol Values Unit Note / Test condition Min. Typ. Max. Input capacitance C 3796 ‑ pF V =0V, =400V, =250kHzV f Output capacitance C 44 Effective output capacitance, energy related 4) C ‑ 114 ‑ pF V =0V, =0...400VV Effective output capacitance, time related 5) C ‑ 1247 ‑ pF I =constant, =0V, =0...400VV V Turn‑on delay time t ‑ ns V =400V, =13V, =13.5A,V I =5.3Ω; see table 9R Rise time t 9 Turn‑off delay time t 112.3 Fall time t 6.1 is a fixed capacitance that gives the same stored energy as while is rising from 0 to 400V4) C C V is a fixed capacitance that gives the same charging time as while is rising from 0 to 400V5) C C V j (BR)DSS GS D (GS)th DS GS D DSS DS GS j DS GS j GSS GS DS DS(on) GS D j GS D j G iss GS DS oss o(er) GS DS o(tr) D GS DS d(on) DD GS D G r d(off) f o(er) oss DS o(tr) oss DS

650V CoolMOS™ CM8 Power Transistor IPW65R040CM8 Public Datasheet 6 Revision 2.1 https://www.infineon.com 2025‑03‑07 Table 6 Gate charge characteristics Parameter Symbol Values Unit Note / Test condition Min. Typ. Max. Gate to source charge Q nC V =400V, =13.5A, =0 to 10VI V Gate to drain charge Q 25 nC Gate charge total Q 80 nC Gate plateau voltage V 5.8 V Table 7 Reverse diode characteristics Parameter Symbol Values Unit Note / Test condition Min. Typ. Max. Diode forward voltage V ‑ 0.9 ‑ V V =0V, =13.5A, =25°CI T Reverse recovery time t 120 150 ns V =400V, =13.5A, d /d =100A/μs; I i t see table 8Reverse recovery charge Q 0.73 1.1 μC Peak reverse recovery current I 11.8 ‑ A gs DD D GS gd g plateau SD GS F j rr R F F rr rrm

650V CoolMOS™ CM8 Power Transistor IPW65R040CM8 Public Datasheet 7 Revision 2.1 https://www.infineon.com 2025‑03‑07

4 Electrical characteristics diagrams

Diagram 1: Power dissipation Diagram 2: Safe operating area P =f( )T I =f( ); =25 °C; =0; parameter: V T D t Diagram 3: Safe operating area Diagram 4: Max. transient thermal impedance I =f( ); =80 °C; =0; parameter: V T D t Z =f( ); parameter: /t D=t T tot C D DS C p D DS C p thJC P p 0 25 50 75 100 125 150 TC [°C] 100 150 200 250 300 350Ptot [W] 100 101 102 103 VDS [V] 10 3 10 2 10 1 100 101 102 103 ID [A] 1 µs 10 µs 100 µs 1 ms 10 ms DC 100 101 102 103 VDS [V] 10 3 10 2 10 1 100 101 102 103 ID [A] 1 µs 10 µs 100 µs 1 ms 10 ms DC 10 5 10 4 10 3 10 2 10 1 tp [s] 10 2 10 1 100 ZthJC [°C/W] single pulse 0.01 0.02 0.05 0.1 0.2 0.5

650V CoolMOS™ CM8 Power Transistor IPW65R040CM8 Public Datasheet 8 Revision 2.1 https://www.infineon.com 2025‑03‑07 Diagram 5: Typ. output characteristics Diagram 6: Typ. output characteristics I =f( ); =25 °C; parameter: V T V I =f( ); =125 °C; parameter: V T V Diagram 7: Typ. drain‑source on‑state resistance Diagram 8: Drain‑source on‑state resistance R =f( ); =125 °C; parameter: I T V R =f( ); =25.0 A; =10 VT I V D DS j GS D DS j GS DS(on) D j GS DS(on) j D GS 0 5 10 15 20 VDS [V] 100 150 200 250 300 350 400ID [A] 6 V 7 V 8 V 10 V 20 V 0 5 10 15 20 VDS [V] 100 150 200 250ID [A] 5.5 V 6 V 7 V 8 V 10 V 20 V 0 50 100 150 200 ID [A] 0.050 0.060 0.070 0.080 0.090 0.100 0.110 RDS(on) [ ] 20 V 5.5 V 6 V 6.5 V 7 V 10 V 0 25 50 75 100 125 150 Tj [°C] 0.5 1.0 1.5 2.0 2.5 RDS(on) [normalized]

650V CoolMOS™ CM8 Power Transistor IPW65R040CM8 Public Datasheet 9 Revision 2.1 https://www.infineon.com 2025‑03‑07 Diagram 9: Typ. transfer characteristics Diagram 10: Typ. gate charge I =f( ); =20V; parameter: V V T V =f( ); =13.5 A pulsed; parameter: Q I V Diagram 11: Forward characteristics of reverse diode Diagram 12: Avalanche energy I =f( ); parameter: V T E =f( ); =4.9 A; =50 VT I V D GS DS j GS gate D DD F SD j AS j D DD 0 2 4 6 8 10 12 VGS [V] 100 150 200 250 300 350ID [A] 25 °C 150 °C 0 10 20 30 40 50 60 70 80 90 Qgate [nC] 12VGS [V] 400 V 120 V VSD [V] 10 1 100 101 102 IF [A] 25 °C125 °C 25 50 75 100 125 150 Tj [°C] 100 125 150EAS [mJ]

650V CoolMOS™ CM8 Power Transistor IPW65R040CM8 Public Datasheet 10 Revision 2.1 https://www.infineon.com 2025‑03‑07 Diagram 13: Drain‑source breakdown voltage Diagram 14: Typ. capacitances V =f( ); =1 mAT I C=f( ); =0 V; =250 kHzV V f Diagram 15: Typ. Coss stored energy E =f(V ) BR(DSS) j D DS GS oss DS 0 25 50 75 100 125 150 Tj [°C] 550 600 650 700 750 VBR(DSS) [V] 0 100 200 300 400 500 VDS [V] 100 101 102 103 104 105 C [pF] Ciss Coss Crss 0 100 200 300 400 500 VDS [V] 15Eoss [µJ]

650V CoolMOS™ CM8 Power Transistor IPW65R040CM8 Public Datasheet 11 Revision 2.1 https://www.infineon.com 2025‑03‑07

5 Test circuits

Table 8 Diode characteristics Table 9 Switching times Table 10 Unclamped inductive load Test circuit for diode characteristics Diode recovery waveform VS R IF VD RGdiodeRGdiode G switchG switch Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

650V CoolMOS™ CM8 Power Transistor IPW65R040CM8 Public Datasheet 12 Revision 2.1 https://www.infineon.com 2025‑03‑07

6 Package outlines

Figure 1 Outline PG‑TO247‑3, dimensions in mm DIMENSIONSMIN.MAX.MILLIMETERSPG-TO247-3-U06PACKAGE - GROUPNUMBER: A2bDcEeLQøPL1 AA1 2.161.85 5.44 20.800.551.07 15.70 3.955.493.5019.80 16.25 1.330.6821.10 6.003.704.4720.32 16.1317.65 b11.902.41 E23.685.10E31.002.60 S6.046.30

650V CoolMOS™ CM8 Power Transistor IPW65R040CM8 Public Datasheet 13 Revision 2.1 https://www.infineon.com 2025‑03‑07

7 Appendix A

IFX CoolMOS CM8 application note IFX CoolMOS CM8 simulation model IFX Design tools

650V CoolMOS™ CM8 Power Transistor IPW65R040CM8 Public Datasheet 14 Revision 2.1 https://www.infineon.com 2025‑03‑07 IPW65R040CM8 Revision 2025‑03‑07, Rev. 2.1 Previous revisions Revision Date Subjects (major changes since last revision) 2.0 2024‑12‑19 Release of final version 2.1 2025‑03‑07 Update of maximum transient thermal impedance and SOA

Revision history

650V CoolMOS™ CM8 Power Transistor IPW65R040CM8 Public Datasheet 15 Revision 2.1 https://www.infineon.com 2025‑03‑07 Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG

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