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Technical content

Features

  • Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss
  • Best-in-classDPAKRDS(on)
  • Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V
  • IntegratedZenerDiodeESDprotection
  • Best-in-classCoolMOS™qualityandreliability;qualifiedforindustrial gradeapplicationsaccordingtoJEDEC(J-STD20andJESD22)
  • Fullyoptimizedportfolio Benefits
  • Best-in-classperformance
  • Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts
  • Easytodriveandtoparallel
  • BetterproductionyieldbyreducingESDrelatedfailures
  • Lessproductionissuesandreducedfieldreturns
  • Easytoselectrightpartsforfinetuningofdesigns

Applications

RecommendedforhardandsoftswitchingflybacktopologiesforLED Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand Industrialpower.AlsosuitableforPFCstageinConsumerapplications andSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C 800 V RDS(on),max 1.4 Ω Qg,typ 10 nC ID 4 A Eoss @ 500V 0.9 µJ VGS(th),typ 3 V ESD class (HBM) 2 - Type/OrderingCode Package Marking RelatedLinks IPU80R1K4P7 PG-TO 251 80R1K4P7 see Appendix A

800VCoolMOSªP7PowerTransistor IPU80R1K4P7 Rev.2.0,2016-07-05Final Data Sheet TableofContents

800VCoolMOSªP7PowerTransistor IPU80R1K4P7 Rev.2.0,2016-07-05Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID

2.7 A TC=25°C

TC=100°C Pulsed drain current2) ID,pulse - - 8.9 A TC=25°C Avalanche energy, single pulse EAS - - 8 mJ ID=0.6A; VDD=50V Avalanche energy, repetitive EAR - - 0.07 mJ ID=0.6A; VDD=50V Avalanche current, repetitive IAR - - 0.6 A - MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0to400V Gate source voltage VGS -20 -30

30 V static;

AC (f>1 Hz) Power dissipation Ptot - - 32 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C - Continuous diode forward current IS - - 3 A TC=25°C Diode pulse current2) IS,pulse - - 8.9 A TC=25°C Reverse diode dv/dt3) dv/dt - - 1 V/ns VDS=0to400V,ISD<=0.7A,Tj=25°C Maximum diode commutation speed3) dif/dt - - 50 A/µs VDS=0to400V,ISD<=0.7A,Tj=25°C 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 3.9 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Thermal resistance, junction - ambient for SMD version RthJA - - - °C/W n.a Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s 1) Limited by Tj max. Maximum duty cycle D=0.5 2) Pulse width tp limited by Tj,max 3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<2µs

800VCoolMOSªP7PowerTransistor IPU80R1K4P7 Rev.2.0,2016-07-05Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 800 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2.5 3 3.5 V VDS=VGS,ID=0.07mA Zero gate voltage drain current IDSS - µA VDS=800V,VGS=0V,Tj=25°C VDS=800V,VGS=0V,Tj=150°C Gate-source leakage curent incl. zener diode IGSS - - 1 µA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 1.2 3.1 1.4 - Ω VGS=10V,ID=1.4A,Tj=25°C VGS=10V,ID=1.4A,Tj=150°C Gate resistance RG - 1.5 - Ω f=250kHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 250 - pF VGS=0V,VDS=500V,f=250kHz Output capacitance Coss - 6.5 - pF VGS=0V,VDS=500V,f=250kHz Effective output capacitance, energy related1) Co(er) - 8 - pF VGS=0V,VDS=0to500V Effective output capacitance, time related2) Co(tr) - 97 - pF ID=constant,VGS=0V,VDS=0to500V Turn-on delay time td(on) - 10 - ns VDD=400V,VGS=13V,ID=1.4A, RG=22Ω Rise time tr - 8 - ns VDD=400V,VGS=13V,ID=1.4A, RG=22Ω Turn-off delay time td(off) - 40 - ns VDD=400V,VGS=13V,ID=1.4A, RG=22Ω Fall time tf - 20 - ns VDD=400V,VGS=13V,ID=1.4A, RG=22Ω Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 1 - nC VDD=640V,ID=1.4A,VGS=0to10V Gate to drain charge Qgd - 5 - nC VDD=640V,ID=1.4A,VGS=0to10V Gate charge total Qg - 10 - nC VDD=640V,ID=1.4A,VGS=0to10V Gate plateau voltage Vplateau - 4.5 - V VDD=640V,ID=1.4A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to500V 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to500V

800VCoolMOSªP7PowerTransistor IPU80R1K4P7 Rev.2.0,2016-07-05Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=1.4A,Tf=25°C Reverse recovery time trr - 800 - ns VR=400V,IF=0.7A,diF/dt=50A/µs Reverse recovery charge Qrr - 5 - µC VR=400V,IF=0.7A,diF/dt=50A/µs Peak reverse recovery current Irrm - 9 - A VR=400V,IF=0.7A,diF/dt=50A/µs

800VCoolMOSªP7PowerTransistor IPU80R1K4P7 Rev.2.0,2016-07-05Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T

800VCoolMOSªP7PowerTransistor IPU80R1K4P7 Rev.2.0,2016-07-05Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 1.4 2.4 3.4 4.4 5.4 6.4 5 V 5.5 V 6 V 6.5 V 7 V 10 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -50 -25 100 125 150 0.1 0.6 1.1 1.6 2.1 2.6 3.1 98% typ RDS(on)=f(Tj);ID=1.4A;VGS=10V

800VCoolMOSªP7PowerTransistor IPU80R1K4P7 Rev.2.0,2016-07-05Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 25 °C 150 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 120 V 640 V VGS=f(Qgate);ID=1.4Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 10-1 100 101 102 25 °C 125 °C IF=f(VSD);parameter:Tj Diagram12:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 EAS=f(Tj);ID=0.6A;VDD=50V

800VCoolMOSªP7PowerTransistor IPU80R1K4P7 Rev.2.0,2016-07-05Final Data Sheet Diagram13:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -75 -50 -25 100 125 150 175 700 750 800 850 900 950 VBR(DSS)=f(Tj);ID=1mA Diagram14:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 10-1 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 600 700 800 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 Eoss=f(VDS)

800VCoolMOSªP7PowerTransistor IPU80R1K4P7 Rev.2.0,2016-07-05Final Data Sheet 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform t V ,I Irrm IF VDS 10 %Irrm trr tF tS QF QS dIF / dt dIrr / dt VDS(peak) Qrr = QF +QS trr =tF +tS VDS IF VDS IF Rg1 Rg 2 Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

800VCoolMOSªP7PowerTransistor IPU80R1K4P7 Rev.2.0,2016-07-05Final Data Sheet 6PackageOutlines MILLIMETERSA1b4b2bADIM D1EE1c2D e1e MIN 0.46 0.0350.0250.085 m MAX 0.60 j INCHES 0.1800.090 MIN0.0450.035MAX0.095 m 2.0EUROPEAN PROJECTION ISSUE DATE SCALE0 4mm 02.0 REVISION01-04-201604 DOCUMENT NO.Z8B0003330 1.90 0.0752.29 0.090L1 c Figure1OutlinePG-TO251,dimensionsinmm/inches

800VCoolMOSªP7PowerTransistor IPU80R1K4P7 Rev.2.0,2016-07-05Final Data Sheet 7AppendixA Table11RelatedLinks

  • IFXCoolMOSWebpage:www.infineon.com
  • IFXDesigntools:www.infineon.com

800VCoolMOSªP7PowerTransistor IPU80R1K4P7 Rev.2.0,2016-07-05Final Data Sheet RevisionHistory IPU80R1K4P7 Revision:2016-07-05,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-07-05 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.