IPTC007N06NM5 INFINEON | Alldatasheet

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Technical content

Features

  • Optimizedformotordrivesandbatterypoweredapplications
  • Optimizedfortopsidecooling
  • Highcurrentcapability
  • 175°Crated
  • 100%avalanchetested
  • Superiorthermalperformance
  • N-Channel
  • Pb-freeleadplating;RoHScompliant
  • Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 0.75 mΩ ID 454 A Qoss 219 nC QG 209 nC Type/OrderingCode Package Marking RelatedLinks IPTC007N06NM5 PG-HDSOP-16 07N06NM5 -

OptiMOSTM5Power-Transistor,60V IPTC007N06NM5 Rev.2.0,2022-09-27Final Data Sheet TableofContents

OptiMOSTM5Power-Transistor,60V IPTC007N06NM5 Rev.2.0,2022-09-27Final Data Sheet 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 454 348 321 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=6V,TC=100°C VGS=10V,TA=25°C,RthJA=40°C/W2) Pulsed drain current3) ID,pulse - - 1816 A TA=25°C Avalanche energy, single pulse4) EAS - - 1100 mJ ID=150A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot 375

3.8 W TC=25°C

TA=25°C,RthJA=40°C/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C - 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case, top RthJC - 0.24 0.4 °C/W - Thermal characterization parameter, junction to lead (Pin 1-7)5) Ψ JL - 9 - °C/W - Thermal characterization parameter, junction to lead (Pin 9-16)5) Ψ JL - 3 - °C/W - Thermal resistance, junction-ambient2) RthJA - 40 - °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information 5) Ψ JL is a temperature characterization parameter according to JESD51-12 referring to the temperature difference between junction and leads in the case of natural convection. It can be used to estimate the component junction temperature in the application by measuring the temperature at the leads in the stated application environment

OptiMOSTM5Power-Transistor,60V IPTC007N06NM5 Rev.2.0,2022-09-27Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 60 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2.1 2.8 3.3 V VDS=VGS,ID=280µA Zero gate voltage drain current IDSS 0.5 1.0 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.66 0.85 0.75 1.0 mΩ VGS=10V,ID=150A VGS=6V,ID=75A Gate resistance1) RG - 1.8 2.7 Ω - Transconductance gfs 165 330 - S |VDS|≥2|ID|RDS(on)max,ID=100A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 16000 21000 pF VGS=0V,VDS=30V,f=1MHz Output capacitance1) Coss - 3100 4000 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance1) Crss - 200 350 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 38 - ns VDD=30V,VGS=10V,ID=100A, RG,ext=1.8Ω Rise time tr - 18 - ns VDD=30V,VGS=10V,ID=100A, RG,ext=1.8Ω Turn-off delay time td(off) - 76 - ns VDD=30V,VGS=10V,ID=100A, RG,ext=1.8Ω Fall time tf - 22 - ns VDD=30V,VGS=10V,ID=100A, RG,ext=1.8Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 66 - nC VDD=30V,ID=100A,VGS=0to10V Gate charge at threshold Qg(th) - 44 - nC VDD=30V,ID=100A,VGS=0to10V Gate to drain charge1) Qgd - 35 53 nC VDD=30V,ID=100A,VGS=0to10V Switching charge Qsw - 57 - nC VDD=30V,ID=100A,VGS=0to10V Gate charge total1) Qg - 209 261 nC VDD=30V,ID=100A,VGS=0to10V Gate plateau voltage Vplateau - 4.2 - V VDD=30V,ID=100A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 186 - nC VDS=0.1V,VGS=0to10V Output charge1) Qoss - 219 291 nC VDS=30V,VGS=0V 1) Defined by design. Not subject to production test. 2) See ″Gate charge waveforms″ for parameter definition

OptiMOSTM5Power-Transistor,60V IPTC007N06NM5 Rev.2.0,2022-09-27Final Data Sheet Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - 308 A TC=25°C Diode pulse current IS,pulse - - 1816 A TC=25°C Diode forward voltage VSD - 0.83 1.0 V VGS=0V,IF=100A,Tj=25°C Reverse recovery time1) trr - 87 174 ns VR=30V,IF=100A,diF/dt=100A/µs Reverse recovery charge Qrr - 144 - nC VR=30V,IF=100A,diF/dt=100A/µs 1) Defined by design. Not subject to production test.

OptiMOSTM5Power-Transistor,60V IPTC007N06NM5 Rev.2.0,2022-09-27Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 175 200 100 150 200 250 300 350 400 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 125 150 175 200 100 200 300 400 500 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 10-1 100 101 102 103 104 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-6 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 101 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 ZthJC=f(tp);parameter:D=tp/T

OptiMOSTM5Power-Transistor,60V IPTC007N06NM5 Rev.2.0,2022-09-27Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 250 500 750 1000 1250 1500 1750 2000 7 V 8 V 10 V 6 V 5 V 4.5 V ID=f(VDS),Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 100 200 300 400 500 600 700 800 0.0 0.4 0.8 1.2 1.6 2.0 4.5 V 5 V 6 V 7 V 8 V 10 V RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 250 500 750 1000 1250 1500 1750 2000 175 °C 25 °C ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.drain-sourceonresistance VGS[V] RDS(on)[mΩ ] 0.0 0.4 0.8 1.2 1.6 2.0 175 °C 25 °C RDS(on)=f(VGS),ID=150A;parameter:Tj

OptiMOSTM5Power-Transistor,60V IPTC007N06NM5 Rev.2.0,2022-09-27Final Data Sheet Diagram9:Normalizeddrain-sourceonresistance Tj[°C] RDS(on)(normalizedto25°C) -75 -50 -25 100 125 150 175 200 0.0 0.4 0.8 1.2 1.6 2.0 RDS(on)=f(Tj),ID=150A,VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -75 -50 -25 100 125 150 175 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 2800 µA 280 µA VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances VDS[V] C[pF] 102 103 104 105 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 2.5 101 102 103 104 25 °C 25 °C, max 175 °C 175 °C, max IF=f(VSD);parameter:Tj

OptiMOSTM5Power-Transistor,60V IPTC007N06NM5 Rev.2.0,2022-09-27Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 100 101 102 103 100 101 102 103 25 °C 100 °C 150 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj,start Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 120 160 200 240 12 V 30 V 48 V VGS=f(Qgate),ID=100Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -75 -50 -25 100 125 150 175 200 VBR(DSS)=f(Tj);ID=1mA Diagram Gate charge waveforms

OptiMOSTM5Power-Transistor,60V IPTC007N06NM5 Rev.2.0,2022-09-27Final Data Sheet 5PackageOutlines DIMENSIONSMIN.MAX.bDcEeL AA1 1.20 MILLIMETERS2.250.012.350.16 PG-HDSOP-16-U01REVISION: 01DATE: 18.12.2020PACKAGE - GROUPNUMBER: E110.0010.30e18.40 Figure1OutlinePG-HDSOP-16,dimensionsinmm

OptiMOSTM5Power-Transistor,60V IPTC007N06NM5 Rev.2.0,2022-09-27Final Data Sheet RevisionHistory IPTC007N06NM5 Revision:2022-09-27,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2022-09-27 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2022InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.