IPT129N20NM6 INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 11

Technical content

Features

  • N-channel,normallevel
  • Verylowon-resistanceRDS(on)
  • ExcellentgatechargexRDS(on)product(FOM)
  • Verylowreverserecoverycharge(Qrr)
  • Highavalancheenergyrating
  • 175°Coperatingtemperature
  • Pb-freeleadplating;RoHScompliant
  • Halogen-freeaccordingtoIEC61249-2-21
  • MSL1classifiedaccordingtoJ-STD-020
  • 100%avalanchetested Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 200 V RDS(on),max 12.9 mΩ ID 87 A Qoss 116 nC QG 37 nC Qrr(1000A/µs) 142 nC Type/OrderingCode Package Marking RelatedLinks IPT129N20NM6 PG-HSOF-8 129N20N6 -

OptiMOSTM6Power-Transistor,200V IPT129N20NM6 Rev.2.0,2023-12-07Final Data Sheet TableofContents

OptiMOSTM6Power-Transistor,200V IPT129N20NM6 Rev.2.0,2023-12-07Final Data Sheet 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=15V,TC=100°C VGS=10V,TA=25°C,RthJA=40°C/W2) Pulsed drain current3) ID,pulse - - 348 A TC=25°C Avalanche energy, single pulse4) EAS - - 258 mJ ID=39A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot 234

3.8 W TC=25°C

TA=25°C,RthJA=40°C/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C - 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - 0.32 0.64 °C/W - Thermal resistance, junction - ambient, 6 cm² cooling area2) RthJA - - 40 °C/W - Thermal resistance, junction - ambient, minimal footprint RthJA - - 62 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information

OptiMOSTM6Power-Transistor,200V IPT129N20NM6 Rev.2.0,2023-12-07Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 200 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 3.0 3.7 4.5 V VDS=VGS,ID=129µA Zero gate voltage drain current IDSS 0.1 100 µA VDS=160V,VGS=0V,Tj=25°C VDS=160V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 10.9 9.4 12.9 12 mΩ VGS=10V,ID=65A VGS=15V,ID=65A Gate resistance RG - 3.8 - Ω - Transconductance1) gfs 18 36 - S |VDS|≥2|ID|RDS(on)max,ID=65A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 2900 3800 pF VGS=0V,VDS=100V,f=1MHz Output capacitance1) Coss - 460 600 pF VGS=0V,VDS=100V,f=1MHz Reverse transfer capacitance1) Crss - 19 33 pF VGS=0V,VDS=100V,f=1MHz Turn-on delay time td(on) - 12 - ns VDD=100V,VGS=10V,ID=32.5A, RG,ext=3Ω Rise time tr - 13 - ns VDD=100V,VGS=10V,ID=32.5A, RG,ext=3Ω Turn-off delay time td(off) - 20 - ns VDD=100V,VGS=10V,ID=32.5A, RG,ext=3Ω Fall time tf - 7 - ns VDD=100V,VGS=10V,ID=32.5A, RG,ext=3Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 20 - nC VDD=100V,ID=32.5A,VGS=0to10V Gate charge at threshold Qg(th) - 10.7 - nC VDD=100V,ID=32.5A,VGS=0to10V Gate to drain charge1) Qgd - 7.5 11.3 nC VDD=100V,ID=32.5A,VGS=0to10V Switching charge Qsw - 16.8 - nC VDD=100V,ID=32.5A,VGS=0to10V Gate charge total1) Qg - 37 56 nC VDD=100V,ID=32.5A,VGS=0to10V Gate plateau voltage Vplateau - 6.9 - V VDD=100V,ID=32.5A,VGS=0to10V Output charge1) Qoss - 116 151 nC VDS=100V,VGS=0V 1) Defined by design. Not subject to production test. 2) See ″Gate charge waveforms″ for parameter definition

OptiMOSTM6Power-Transistor,200V IPT129N20NM6 Rev.2.0,2023-12-07Final Data Sheet Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - 87 A TC=25°C Diode pulse current IS,pulse - - 348 A TC=25°C Diode forward voltage VSD - 0.90 1.0 V VGS=0V,IF=65A,Tj=25°C Reverse recovery time trr - 46 - ns VR=100V,IF=32.5A, diF/dt=100A/µs Reverse recovery charge1) Qrr - 43 86 nC VR=100V,IF=32.5A, diF/dt=100A/µs Reverse recovery time trr - 39 - ns VR=100V,IF=32.5A, diF/dt=1000A/µs Reverse recovery charge1) Qrr - 142 284 nC VR=100V,IF=32.5A, diF/dt=1000A/µs 1) Defined by design. Not subject to production test.

OptiMOSTM6Power-Transistor,200V IPT129N20NM6 Rev.2.0,2023-12-07Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 175 120 160 200 240 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 125 150 175 100 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-6 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 101 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 ZthJC=f(tp);parameter:D=tp/T

OptiMOSTM6Power-Transistor,200V IPT129N20NM6 Rev.2.0,2023-12-07Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 100 125 150 15 V 10 V 8 V 7 V 6 V ID=f(VDS),Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 100 125 150 175 6 V 7 V 8 V 10 V 15 V RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 120 160 200 240 175 °C 25 °C ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.drain-sourceonresistance VGS[V] RDS(on)[mΩ ] 25 °C 175 °C RDS(on)=f(VGS),ID=65A;parameter:Tj

OptiMOSTM6Power-Transistor,200V IPT129N20NM6 Rev.2.0,2023-12-07Final Data Sheet Diagram9:Normalizeddrain-sourceonresistance Tj[°C] RDS(on)(normalizedto25°C) -75 -50 -25 100 125 150 175 200 0.0 0.5 1.0 1.5 2.0 2.5 RDS(on)=f(Tj),ID=65A,VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -75 -50 -25 100 125 150 175 200 1290 µA 129 µA VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances VDS[V] C[pF] 100 125 150 175 200 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.4 0.8 1.2 1.6 2.0 2.4 100 101 102 103 25 °C 25 °C, max 175 °C 175 °C, max IF=f(VSD);parameter:Tj

OptiMOSTM6Power-Transistor,200V IPT129N20NM6 Rev.2.0,2023-12-07Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 100 101 102 103 10-1 100 101 102 25 °C 100 °C 150 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj,start Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 40 V 100 V 160 V VGS=f(Qgate),ID=32.5Apulsed,Tj=25°C;parameter:VDD Diagram15:Min.drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -75 -50 -25 100 125 150 175 200 183 188 193 198 203 208 213 218 223 VBR(DSS)=f(Tj);ID=1mA Diagram Gate charge waveforms

OptiMOSTM6Power-Transistor,200V IPT129N20NM6 Rev.2.0,2023-12-07Final Data Sheet 5PackageOutlines Z8B00169619 REVISIONISSUE DATE EUROPEAN PROJECTION 0220-02-2014 DOCUMENT NO. E5E4 e MILLIMETERSADIMMINMAXINCHESMINMAXb1cDD2EE1 NL 1.60 9.900.6010.5810.10 2.10 0.3820.0160.4050.382 0.063 0.3900.0240.4160.398 0.0838 8 1.20 (BSC)0.047 (BSC) b 0.700.900.0280.0351) partially covered with Mold Flash b20.420.500.0170.020 2SCALE0 4mm Figure1OutlinePG-HSOF-8,dimensionsinmm/inches

OptiMOSTM6Power-Transistor,200V IPT129N20NM6 Rev.2.0,2023-12-07Final Data Sheet RevisionHistory IPT129N20NM6 Revision:2023-12-07,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2023-12-07 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2023InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.