IPT111N20NFD INFINEON | Alldatasheet

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Technical content

Features

  • N-channel,normallevel
  • FastDiode(FD)withreducedQrr
  • Optimizedforhardcommutationruggedness
  • Verylowon-resistanceRDS(on)
  • 175°Coperatingtemperature
  • Pb-freeleadplating;RoHScompliant
  • QualifiedaccordingtoJEDEC1)fortargetapplication
  • Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 200 V RDS(on),max 11.1 mΩ ID 96 A Type/OrderingCode Package Marking RelatedLinks IPT111N20NFD PG-HSOF-8 111N20NF - 1) J-STD20 and JESD22

OptiMOSª3Power-Transistor,200V IPT111N20NFD Rev.2.1,2016-02-23Final Data Sheet TableofContents

OptiMOSª3Power-Transistor,200V IPT111N20NFD Rev.2.1,2016-02-23Final Data Sheet 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID

76 A TC=25°C

TC=100°C Pulsed drain current1) ID,pulse - - 384 A TC=25°C Avalanche energy, single pulse EAS - - 375 mJ ID=67A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 375 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 0.4 K/W - Thermal resistance, junction - ambient, minimal footprint RthJA - - 62 K/W - Thermal resistance, junction - ambient, 6 cm2 cooling area2) RthJA - - 40 K/W - 3Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 200 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS,ID=267µA Zero gate voltage drain current IDSS 0.1 100 µA VDS=160V,VGS=0V,Tj=25°C VDS=160V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 9 11.1 mΩ VGS=10V,ID=96A Gate resistance3) RG - 2.8 4.2 Ω - Transconductance gfs 82 163 - S |VDS|>2|ID|RDS(on)max,ID=96A 1) See Diagram 3 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) Defined by design. Not subject to production test

OptiMOSª3Power-Transistor,200V IPT111N20NFD Rev.2.1,2016-02-23Final Data Sheet Table5Dynamiccharacteristics1) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 5300 7000 pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 400 530 pF VGS=0V,VDS=100V,f=1MHz Reverse transfer capacitance Crss - 6 9.4 pF VGS=0V,VDS=100V,f=1MHz Turn-on delay time td(on) - 13 - ns VDD=100V,VGS=10V,ID=48A, RG,ext=1.6Ω Rise time tr - 11 - ns VDD=100V,VGS=10V,ID=48A, RG,ext=1.6Ω Turn-off delay time td(off) - 39 - ns VDD=100V,VGS=10V,ID=48A, RG,ext=1.6Ω Fall time tf - 13 - ns VDD=100V,VGS=10V,ID=48A, RG,ext=1.6Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 25 - nC VDD=100V,ID=96A,VGS=0to10V Gate to drain charge1) Qgd - 8 - nC VDD=100V,ID=96A,VGS=0to10V Switching charge Qsw - 17 - nC VDD=100V,ID=96A,VGS=0to10V Gate charge total1) Qg - 65 87 nC VDD=100V,ID=96A,VGS=0to10V Gate plateau voltage Vplateau - 4.7 - V VDD=100V,ID=96A,VGS=0to10V Output charge1) Qoss - 162 - nC VDD=100V,VGS=0V Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continous forward current IS - - 96 A TC=25°C Diode pulse current IS,pulse - - 384 A TC=25°C Diode forward voltage VSD - 0.95 1.2 V VGS=0V,IF=96A,Tj=25°C Reverse recovery time1) trr - 125 250 ns VR=100V,IF=IS,diF/dt=100A/µs Reverse recovery charge1) Qrr - 309 - nC VR=100V,IF=IS,diF/dt=100A/µs 1) Defined by design. Not subject to production test 2) See ″Gate charge waveforms″ for parameter definition

OptiMOSª3Power-Transistor,200V IPT111N20NFD Rev.2.1,2016-02-23Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 150 200 100 150 200 250 300 350 400 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 150 200 100 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 103 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 10-2 10-1 100 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tp);parameter:D=tp/T

OptiMOSª3Power-Transistor,200V IPT111N20NFD Rev.2.1,2016-02-23Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 100 150 200 250 300 350 10 V 8 V 7 V 6.5 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 100 150 4.5 V 5 V 5.5 V 6 V 8 V 10 V RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 100 150 200 175 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.forwardtransconductance ID[A] gfs[S] 120 160 100 120 140 160 180 200 220 gfs=f(ID);Tj=25°C

OptiMOSª3Power-Transistor,200V IPT111N20NFD Rev.2.1,2016-02-23Final Data Sheet Diagram9:Drain-sourceon-stateresistance Tj[°C] RDS(on)[mΩ ] -60 -20 100 140 180 98% typ RDS(on)=f(Tj);ID=96A;VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -60 -20 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2670 µA 267 µA VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances VDS[V] C[pF] 100 120 140 160 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 100 101 102 103 25 °C 175 °C 25°C, 98% 175°C, 98% IF=f(VSD);parameter:Tj

OptiMOSª3Power-Transistor,200V IPT111N20NFD Rev.2.1,2016-02-23Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAS[A] 100 101 102 103 100 101 102 103 25 °C 100 °C 125 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj(start) Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 160 V 100 V 40 V VGS=f(Qgate);ID=96Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 180 190 200 210 220 230 VBR(DSS)=f(Tj);ID=1mA Gate charge waveforms

OptiMOSª3Power-Transistor,200V IPT111N20NFD Rev.2.1,2016-02-23Final Data Sheet 5PackageOutlines Z8B00169619 REVISIONISSUE DATE EUROPEAN PROJECTION 0220-02-2014 DOCUMENT NO. E5E4 e MILLIMETERSADIMMINMAXINCHESMINMAXb1cDD2EE1 NL 1.60 9.900.6010.5810.10 2.10 0.3820.0160.4050.382 0.063 0.3900.0240.4160.398 0.0838 8 1.20 (BSC)0.047 (BSC) b 0.700.900.0280.0351) partially covered with Mold Flash b20.420.500.0170.020 2SCALE0 4mm Figure1OutlinePG-HSOF-8

OptiMOSª3Power-Transistor,200V IPT111N20NFD Rev.2.1,2016-02-23Final Data Sheet RevisionHistory IPT111N20NFD Revision:2016-02-23,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-01-11 Release of final version 2.1 2016-02-23 Update Eas and Vds for Idss TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.