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Document overview

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Technical content

Features

  • ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
  • Veryhighcommutationruggedness
  • Easytouse/drive
  • Pb-freeplating,Halogenfreemoldcompound
  • Qualifiedforstandardgradeapplications

Applications

PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 1000 mΩ Id. 6.8 A Qg.typ 13 nC ID,pulse 12 A Eoss@400V 1.3 µJ Type/OrderingCode Package Marking RelatedLinks IPS60R1K0CE PG-TO 251 60S1K0CE see Appendix A

600VCoolMOSªCEPowerTransistor IPS60R1K0CE Rev.2.0,2016-02-26Final Data Sheet TableofContents

600VCoolMOSªCEPowerTransistor IPS60R1K0CE Rev.2.0,2016-02-26Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 6.8

4.3 A TC=25°C

TC=100°C Pulsed drain current2) ID,pulse - - 12 A TC=25°C Avalanche energy, single pulse EAS - - 46 mJ ID=0.8A; VDD=50V; see table 11 Avalanche energy, repetitive EAR - - 0.13 mJ ID=0.8A; VDD=50V; see table 11 Avalanche current, repetitive IAR - - 0.8 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation TO-251 Ptot - - 61 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Continuous diode forward current IS - - 4.8 A TC=25°C Diode pulse current2) IS,pulse - - 12 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 9 Maximum diode commutation speed dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 9 2Thermalcharacteristics Table3ThermalcharacteristicsTO-251 Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 2.06 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s 1) Limited by Tj max. Maximum duty cycle D=0.50 2) Pulse width tp limited by Tj,max 3)IdenticallowsideandhighsideswitchwithidenticalRG

600VCoolMOSªCEPowerTransistor IPS60R1K0CE Rev.2.0,2016-02-26Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=0.25mA Gate threshold voltage V(GS)th 2.5 3.0 3.5 V VDS=VGS,ID=0.13mA Zero gate voltage drain current IDSS - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.86 2.22 1.00 - Ω VGS=10V,ID=1.5A,Tj=25°C VGS=10V,ID=1.5A,Tj=150°C Gate resistance RG - 16 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 280 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 21 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 14 - pF VGS=0V,VDS=0...480V Effective output capacitance, time related2) Co(tr) - 57 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 10 - ns VDD=400V,VGS=10V,ID=1.9A, RG=12.2Ω ;seetable10 Rise time tr - 8 - ns VDD=400V,VGS=10V,ID=1.9A, RG=12.2Ω ;seetable10 Turn-off delay time td(off) - 60 - ns VDD=400V,VGS=10V,ID=1.9A, RG=12.2Ω ;seetable10 Fall time tf - 13 - ns VDD=400V,VGS=10V,ID=1.9A, RG=12.2Ω ;seetable10 Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 1.5 - nC VDD=480V,ID=1.9A,VGS=0to10V Gate to drain charge Qgd - 6.5 - nC VDD=480V,ID=1.9A,VGS=0to10V Gate charge total Qg - 13 - nC VDD=480V,ID=1.9A,VGS=0to10V Gate plateau voltage Vplateau - 5.4 - V VDD=480V,ID=1.9A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS 2)Co(tr)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS

600VCoolMOSªCEPowerTransistor IPS60R1K0CE Rev.2.0,2016-02-26Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=1.9A,Tj=25°C Reverse recovery time trr - 220 - ns VR=400V,IF=1.9A,diF/dt=100A/µs; see table 9 Reverse recovery charge Qrr - 1.5 - µC VR=400V,IF=1.9A,diF/dt=100A/µs; see table 9 Peak reverse recovery current Irrm - 12 - A VR=400V,IF=1.9A,diF/dt=100A/µs; see table 9

600VCoolMOSªCEPowerTransistor IPS60R1K0CE Rev.2.0,2016-02-26Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation(NonFullPAK) TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram2:Safeoperatingarea(NonFullPAK) VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea(NonFullPAK) VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance(NonFullPAK) tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T

600VCoolMOSªCEPowerTransistor IPS60R1K0CE Rev.2.0,2016-02-26Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 V 5.5V 6 V 6.5 V 7 V 10 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -50 -25 100 125 150 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 98% typ RDS(on)=f(Tj);ID=1.5A;VGS=10V

600VCoolMOSªCEPowerTransistor IPS60R1K0CE Rev.2.0,2016-02-26Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 120 V 480 V VGS=f(Qgate);ID=1.9Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 10-1 100 101 102 25 °C 125 °C IF=f(VSD);parameter:Tj Diagram12:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 EAS=f(Tj);ID=0.8A;VDD=50V

600VCoolMOSªCEPowerTransistor IPS60R1K0CE Rev.2.0,2016-02-26Final Data Sheet Diagram13:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -75 -50 -25 100 125 150 175 520 540 560 580 600 620 640 660 680 700 VBR(DSS)=f(Tj);ID=0.25mA Diagram14:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 Eoss=f(VDS)

600VCoolMOSªCEPowerTransistor IPS60R1K0CE Rev.2.0,2016-02-26Final Data Sheet 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform t V ,I Irrm IF VDS 10 %Irrm trr tF tS QF QS dIF / dt dIrr / dt VDS(peak) Qrr = QF +QS trr =tF +tS VDS IF VDS IF Rg1 Rg 2 Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

600VCoolMOSªCEPowerTransistor IPS60R1K0CE Rev.2.0,2016-02-26Final Data Sheet 6PackageOutlines DIMA 2.0 21-10-2015ISSUE DATE EUROPEAN PROJECTION 0.031 0.0180.0180.235 0.025 0.1810.250 0.118 0.0860.195 0.035 0.026 0.198 MILLIMETERS MIN 0.80 2.18 0.64 5.04 5.21 1.28 3.60 0.89 6.73 0.89 5.50 5.55 MIN INCHESMAX 0.265 0.2170.219 02.0SCALE 4mm 0DOCUMENT NO.Z8B00003329 REVISION060.031 0.80 1.250.049 A1bb2b4cc2DD1EE1ee1NLL1L2 4.95 Figure1OutlinePG-TO251,dimensionsinmm/inches

600VCoolMOSªCEPowerTransistor IPS60R1K0CE Rev.2.0,2016-02-26Final Data Sheet 7AppendixA Table11RelatedLinks

  • IFXCoolMOSTMCEWebpage:www.infineon.com
  • IFXCoolMOSTMCEapplicationnote:www.infineon.com
  • IFXCoolMOSTMCEsimulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

600VCoolMOSªCEPowerTransistor IPS60R1K0CE Rev.2.0,2016-02-26Final Data Sheet RevisionHistory IPS60R1K0CE Revision:2016-02-26,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-02-26 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.