IPP60R099C6 ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscN-ChannelMOSFETTransistor IPP60R099C6，IIPP60R099C6
- FEATURES
- Staticdrain-source on-resistance: RDS(on)≤0.099Ω
- Enhancementmode
- FastSwitching Speed
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRITION
- Provideallbenefits of afastswitchingsuperjunction MOS while not Sacrificing easeofuse
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 600 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 37.9 A IDM DrainCurrent-SinglePulsed 112 A PD TotalDissipation@TC=25℃ 278 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 0.45 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscN-ChannelMOSFETTransistor IPP60R099C6，IIPP60R099C6 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID =250μA 600 V VGS(th) GateThresholdVoltage VDS=VGS;ID =1.21mA 2.5 3.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=18.1A 0.099 Ω IGSS Gate-SourceLeakageCurrent VGS=20V;VDS=0V 0.1 μA IDSS Drain-SourceLeakageCurrent VDS=600V;VGS=0V 5 μA VSD Diodeforwardvoltage IF=18.1A;VGS =0V 0.9 V