IPB200N25N3G_10 INFINEON | Alldatasheet

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9 6# % **% ,2'!2% # (!0'% 6R DS(on) product (FOM) - # -+ . *)!,2 3 !*)&)% $ !# # -0$ ),'2- 1) for target application Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C 64 A T C=100 °C 46 Pulsed drain current2) I D,pulse T C=25 °C 256 Avalanche energy, single pulse E AS I D=47 A, R GS=25 # 320 mJ Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 300 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 2) See figure 3 Value 1)J-STD20 and JESD22 VDS 250 V RDS(on),max 20 m# ID 64 A Product Summary Type IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Marking 200N25N 200N25N 200N25N Rev. 2.3 page 1 2010-10-19

IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 0.5 K/W R thJA minimal footprint - - 62 6 cm2 cooling area3) - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 250 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=270 µA 2 3 4 Zero gate voltage drain current I DSS V DS=200 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=200 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=64 A - 17.5 20 m# Gate resistance R G - 2.4 - # Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=64 A 61 122 - S Values Thermal resistance, junction - ambient 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.3 page 2 2010-10-19

IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 5340 7100 pF Output capacitance C oss - 297 395 Reverse transfer capacitance C rss - 4 - Turn-on delay time t d(on) - 18 - ns Rise time t r - 20 - Turn-off delay time t d(off) - 45 - Fall time t f - 12 - Gate Charge Characteristics4) Gate to source charge Q gs - 22 - nC Gate to drain charge Q gd - 7 - Switching charge Q sw - 13 - Gate charge total Q g - 64 86 Gate plateau voltage V plateau - 4.2 - V Output charge Q oss V DD=100 V, V GS=0 V - 135 179 nC Reverse Diode Diode continous forward current I S - - 64 A Diode pulse current I S,pulse - - 256 Diode forward voltage V SD V GS=0 V, I F=64 A, T j=25 °C - 1 1.2 V Reverse recovery time t rr - 170 - ns Reverse recovery charge Q rr - 780 - nC 4) See figure 16 for gate charge parameter definition V R=100 V, I F=25 A, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=100 V, f =1 MHz V DD=100 V, V GS=10 V, I D=25 A, R G=1.6 # V DD=100 V, I D=25 A, V GS=0 to 10 V Rev. 2.3 page 3 2010-10-19

IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G

1 Power dissipation 2 Drain current

P tot=f(T C) I D=f(T C); V GS: 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-5 10-4 10-3 10-2 10-1 100 10-2 10-1 100 ZthJC [K/W] tp [s] 120 160 200 240 280 320 0 50 100 150 200 Ptot [W] TC [°C] 0 50 100 150 200 ID [A] TC [°C] 1 µs 10 µs 100 µs 1 ms 10 ms DC 10-1 100 101 102 103 10-1 100 101 102 103 ID [A] VDS [V] Rev. 2.3 page 4 2010-10-19

IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 4.5 V 5 V 7 V 10 V 0 20 40 60 80 100 120 140 RDS(on) [mW] ID [A] 25 °C 175 °C 100 120 140 0 2 4 6 8 ID [A] VGS [V] 100 120 140 160 180 0 25 50 75 100 125 gfs [S] ID [A] 4.5 V 5 V 7 V 10 V 100 125 150 0 1 2 3 4 5 ID [A] VDS [V] Rev. 2.3 page 5 2010-10-19

IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=64 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98% -60 -20 20 60 100 140 180 RDS(on) [mW] Tj [°C] 270 µA 2700 µA 0.5 1.5 2.5 3.5 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [°C] Ciss Coss Crss 101 102 103 104 0 40 80 120 160 C [pF] VDS [V] 25 °C 175 °C 25°C, 98% 175°C, 98% 100 101 102 103 0 0.5 1 1.5 2 IF [A] VSD [V] Rev. 2.3 page 6 2010-10-19

IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 # V GS=f(Q gate); I D=25 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA 50 V 125 V 200 V 0 20 40 60 80 VGS [V] Qgate [nC] 220 230 240 250 260 270 280 290 -60 -20 20 60 100 140 180 VBR(DSS) [V] Tj [°C]

IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G PG-TO220-3: Outline Rev. 2.3 page 8 2010-10-19

IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G PG-TO263-3: Outline Rev. 2.3 page 9 2010-10-19

IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G PG-TO262-3: Outline Rev. 2.3 page 10 2010-10-19

IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G ! -$ Rev. 2.3 page 11 2010-10-19