IPP055N03LG_09 INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • Fast switching MOSFET for SMPS
  • Optimized technology for DC/DC converters
  • Qualified according to JEDEC1) for target applications
  • N-channel, logic level
  • Excellent gate charge xR DS(on) product (FOM)
  • Very low on-resistanceR DS(on)
  • Avalanche rated
  • Pb-free plating; RoHS compliant
  • Halogen-free according to IEC61249-2-21 Maximum ratings, at T j=25 ° C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D V GS=10 V, T C=25 ° C 50 A V GS=10 V, T C=100 ° C 50 V GS=4.5 V, T C=25 ° C 50 V GS=4.5 V, T C=100 ° C 50 Pulsed drain current2) I D,pulse T C=25 ° C 350 Avalanche current, single pulse3) I AS T C=25 ° C 50 Avalanche energy, single pulse E AS I D=35 A, R GS=25 W 60 mJ Reverse diode dv /dt dv /dt I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 ° C 6 kV/µs Gate source voltage V GS ±20 V Value 1) J-STD20 and JESD22 V DS 30 V R DS(on),max 5.5 mW I D 50 A Product Summary Type IPP055N03L G IPB055N03L G Marking 055N03L 055N03L Rev. 1.03 page 1 2009-09-22

Maximum ratings, at T j=25 ° C, unless otherwise specified Parameter Symbol Conditions Unit Power dissipation P tot T C=25 ° C 68 W Operating and storage temperature T j, T stg -55 ... 175 ° C IEC climatic category; DIN IEC 68-1 55/175/56 Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 2.2 K/W SMD version, device on PCB R thJA minimal footprint - - 62 6 cm² cooling area4) - - 40 Electrical characteristics, at T j=25 ° C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 30 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1 - 2.2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 ° C - 0.1 1 µA V DS=30 V, V GS=0 V, T j=125 ° C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA R DS(on) V GS=4.5 V, I D=30 A - 6.2 7.8 mW V GS=10 V, I D=30 A - 4.6 5.5 Gate resistance R G - 1.5 - W Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=30 A 38 75 - S 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 5) Measured from drain tab to source pin 3) See figure 13 for more detailed information Value Values 2) See figure 3 for more detailed information Drain-source on-state resistance5) Rev. 1.03 page 2 2009-09-22

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 2400 3200 pF Output capacitance C oss - 920 1200 Reverse transfer capacitance Crss - 49 - Turn-on delay time t d(on) - 6.7 - ns Rise time t r - 5.2 - Turn-off delay time t d(off) - 25 - Fall time t f - 4.0 - Gate Charge Characteristics5) Gate to source charge Q gs - 7.5 - nC Gate charge at threshold Q g(th) - 3.8 - Gate to drain charge Q gd - 3.5 - Switching charge Q sw - 7.1 - Gate charge total Q g - 15 - Gate plateau voltage V plateau - 3.1 - V Gate charge total Q g V DD=15 V, I D=30 A, V GS=0 to 10 V - 31 - Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 13 - nC Output charge Q oss V DD=15 V, V GS=0 V - 24 - Reverse Diode Diode continuous forward current I S - - 50 A Diode pulse current I S,pulse - - 350 Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 ° C - 0.88 1.1 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 20 nC 6) See figure 16 for gate charge parameter definition T C=25 ° C Values V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 W V DD=15 V, I D=30 A, V GS=0 to 4.5 V Rev. 1.03 page 3 2009-09-22

1 Power dissipation 2 Drain current

P tot=f(T C) I D=f(T C); V GS!10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 ° C;D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 10 ms DC 10210110010-1 103 102 101 100 10-1 V DS [V] I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10010-110-210-310-410-510-6 0.01 0.1 0 0 0 0 0 0 1 t p [s] Z thJC [K/W] 0 50 100 150 200 T C [° C] P tot [W] 0 50 100 150 200 T C [° C] I D [A] Rev. 1.03 page 4 2009-09-22

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 ° C R DS(on)=f(I D); T j=25 ° C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 ° C parameter: T j 3 V 3.2 V 3.5 V 4 V 4.5 V 5 V 10 V 11.5 V 0 20 40 60 80 100 I D [A] R DS(on) [mWWWW] 25 ° C 175 ° C 120 160 0 1 2 3 4 5 V GS [V] I D [A] 120 160 0 20 40 60 80 100 I D [A] g fs [S] 2.8 V 3 V 3.2 V 3.5 V 4 V 4.5 V 5 V 10 V 120 160 0 1 2 3 V DS [V] I D [A] Rev. 1.03 page 5 2009-09-22

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 µA 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98 % -60 -20 20 60 100 140 180 T j [° C] R DS(on) [mWWWW] 0.5 1.5 2.5 -60 -20 20 60 100 140 180 T j [° C] V GS(th) [V] Ciss Coss Crss 104 103 102 101 10 100 1000 10000 0 5 10 15 20 25 30 V DS [V] C [pF] 25 ° C 175 ° C 25 ° C, 98% 175 ° C, 98% 100 1000 V SD [V] I F [A] Rev. 1.03 page 6 2009-09-22

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA -60 -20 20 60 100 140 180 T j [° C] V BR(DSS) [V] V GS Q gate V g s(th) Q g (th) Q g s Q g d Q sw Q g 25 ° C 100 ° C 150 ° C 10310210110010-1 100 t AV [µs] I AV [A] 6 V 15 V 24 V 0 10 20 30 40 Q gate [nC] V GS [V] Rev. 1.03 page 7 2009-09-22

Footprint: Packaging: Rev. 1.03 page 8 2009-09-22

Rev. 1.03 page 9 2009-09-22

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