IPP051N15N5 INFINEON | Alldatasheet

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Technical content

Features

  • ExcellentgatechargexRDS(on)product(FOM)
  • Verylowon-resistanceRDS(on)
  • 175°Coperatingtemperature
  • Pb-freeleadplating;RoHScompliant
  • QualifiedaccordingtoJEDEC1)fortargetapplication
  • Idealforhigh-frequencyswitchingandsynchronousrectification
  • Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 150 V RDS(on),max(TO220) 5.1 mΩ ID 120 A Type/OrderingCode Package Marking RelatedLinks IPP051N15N5 PG-TO220-3 051N15N5 - 1) J-STD20 and JESD22

OptiMOSª5Power-Transistor,150V IPP051N15N5 Rev.2.0,2016-02-01Final Data Sheet TableofContents

OptiMOSª5Power-Transistor,150V IPP051N15N5 Rev.2.0,2016-02-01Final Data Sheet 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID 120

115 A TC=25°C

TC=100°C Pulsed drain current1) ID,pulse - - 480 A TC=25°C Avalanche energy, single pulse2) EAS - - 230 mJ ID=100A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 300 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - 0.3 0.5 K/W - Thermal resistance, junction - ambient, minimal footprint RthJA - - 62 K/W - 3Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 150 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 3.0 3.8 4.6 V VDS=VGS,ID=264µA Zero gate voltage drain current IDSS 0.1 100 µA VDS=120V,VGS=0V,Tj=25°C VDS=120V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 4.0 4.3 5.1 5.7 mΩ VGS=10V,ID=60A VGS=8V,ID=30A Gate resistance3) RG - 1.1 1.6 Ω - Transconductance gfs 59 117 - S |VDS|>2|ID|RDS(on)max,ID=60A 1) See Diagram 3 2) See Diagram 13 3) Defined by design. Not subject to production test

OptiMOSª5Power-Transistor,150V IPP051N15N5 Rev.2.0,2016-02-01Final Data Sheet Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance1) Ciss - 6000 7800 pF VGS=0V,VDS=75V,f=1MHz Output capacitance1) Coss - 1500 1950 pF VGS=0V,VDS=75V,f=1MHz Reverse transfer capacitance1) Crss - 34 60 pF VGS=0V,VDS=75V,f=1MHz Turn-on delay time td(on) - 19.6 - ns VDD=75V,VGS=10V,ID=60A, RG,ext=1.6Ω Rise time tr - 5.3 - ns VDD=75V,VGS=10V,ID=60A, RG,ext=1.6Ω Turn-off delay time td(off) - 4.5 - ns VDD=75V,VGS=10V,ID=60A, RG,ext=1.6Ω Fall time tf - 37 - ns VDD=75V,VGS=10V,ID=60A, RG,ext=1.6Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 33 - nC VDD=75V,ID=60A,VGS=0to10V Gate to drain charge1) Qgd - 16 24 nC VDD=75V,ID=60A,VGS=0to10V Switching charge Qsw - 26 - nC VDD=75V,ID=60A,VGS=0to10V Gate charge total1) Qg - 80 100 nC VDD=75V,ID=60A,VGS=0to10V Gate plateau voltage Vplateau - 5.4 - V VDD=75V,ID=60A,VGS=0to10V Output charge1) Qoss - 225 299 nC VDD=75V,VGS=0V Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continous forward current IS - - 120 A TC=25°C Diode pulse current IS,pulse - - 480 A TC=25°C Diode forward voltage VSD - 0.87 1.1 V VGS=0V,IF=60A,Tj=25°C Reverse recovery time1) trr - 72 144 ns VR=75V,IF=60A,diF/dt=100A/µs Reverse recovery charge1) Qrr - 106 212 nC VR=75V,IF=60A,diF/dt=100A/µs 1) Defined by design. Not subject to production test 2) See ″Gate charge waveforms″ for parameter definition

OptiMOSª5Power-Transistor,150V IPP051N15N5 Rev.2.0,2016-02-01Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 150 200 120 160 200 240 280 320 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 150 200 100 120 140 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 103 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 10-2 10-1 100 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tp);parameter:D=tp/T

OptiMOSª5Power-Transistor,150V IPP051N15N5 Rev.2.0,2016-02-01Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 100 150 200 250 300 350 400 8 V 10 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 100 150 200 250 300 350 400 5.5 V 6 V 7 V 8 V 10 V 8 V 10 V RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 100 150 200 250 300 350 400 175 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.forwardtransconductance ID[A] gfs[S] 120 120 160 200 gfs=f(ID);Tj=25°C

OptiMOSª5Power-Transistor,150V IPP051N15N5 Rev.2.0,2016-02-01Final Data Sheet Diagram9:Drain-sourceon-stateresistance Tj[°C] RDS(on)[mΩ ] -60 -20 100 140 180 max typ RDS(on)=f(Tj);ID=60A;VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -60 -20 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2640 µA 264 µA VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances VDS[V] C[pF] 100 120 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 2.5 100 101 102 103 25 °C 175 °C 25°C max 175°C max IF=f(VSD);parameter:Tj

OptiMOSª5Power-Transistor,150V IPP051N15N5 Rev.2.0,2016-02-01Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAS[A] 100 101 102 103 100 101 102 103 25 °C 100 °C 125 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj(start) Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 100 120 V 75 V 30 V VGS=f(Qgate);ID=60Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 135 140 145 150 155 160 165 170 VBR(DSS)=f(Tj);ID=1mA Gate charge waveforms

OptiMOSª5Power-Transistor,150V IPP051N15N5 Rev.2.0,2016-02-01Final Data Sheet 5PackageOutlines Figure1OutlinePG-TO220-3,dimensionsinmm/inches

OptiMOSª5Power-Transistor,150V IPP051N15N5 Rev.2.0,2016-02-01Final Data Sheet RevisionHistory IPP051N15N5 Revision:2016-02-01,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-02-01 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.