IPB04N03LA INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

Features

  • Ideal for high-frequency dc/dc converters
  • Qualified according to JEDEC1) for target applications
  • N-channel - Logic level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on)
  • Superior thermal resistance
  • 175 °C operating temperature
  • dv /dt rated Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C2) 80 A T C=100 °C 80 Pulsed drain current I D,pulse T C=25 °C3) 385 Avalanche energy, single pulse E AS I D=77 A, R GS=25 Ω 290 mJ Reverse diode dv /dt dv /dt I D=80 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage4) V GS ±20 V Power dissipation P tot T C=25 °C 107 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 Value V DS 25 V R DS(on),max (SMD version) 3.9 mΩ I D 80 A Product Summary Type Package Ordering Code Marking IPB04N03LA P-TO263-3-2 Q67042-S4181 04N03LA IPI04N03LA P-TO262-3-1 Q67042-S4183 04N03LA IPP04N03LA P-TO220-3-1 Q67042-S4182 04N03LA P-TO220-3-1 P-TO262-3-1 P-TO263-3-2 Rev. 1.4 page 1 2004-03-15

IPI04N03LA, IPP04N03LA Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 1.4 K/W SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area5) -- 4 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 25 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=60 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=25 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=25 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=55 A - 5.4 6.7 mΩ V GS=4.5 V, I D=55 A, SMD version - 5.1 6.4 V GS=10 V, I D=55 A - 3.5 4.2 V GS=10 V, I D=55 A, SMD version - 3.2 3.9 Gate resistance R G - 1.1 - Ω Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=55 A 43 85 - S 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Values 2) Current is limited by bondwire; with an R thJC=1.4 K/W the chip is able to carry 125 A. 3) See figure 3 4) T j,max=150 °C and duty cycle D <0.25 for V GS<-5 V Rev. 1.4 page 2 2004-03-15

IPI04N03LA, IPP04N03LA Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 2915 3877 pF Output capacitance C oss - 1236 1643 Reverse transfer capacitance Crss - 175 263 Turn-on delay time t d(on) -1 3 1 9 n s Rise time t r - 4.5 7.0 Turn-off delay time t d(off) -3 8 5 7 Fall time t f - 5.4 8.1 Gate Charge Characteristics6) Gate to source charge Q gs -1 0 1 3 n C Gate charge at threshold Q g(th) - 4.6 6.2 Gate to drain charge Q gd - 7.2 11 Switching charge Q sw -1 2 1 7 Gate charge total Q g -2 4 3 2 Gate plateau voltage V plateau - 3.3 - V Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 5 V -2 0 2 7 n C Output charge Q oss V DD=15 V, V GS=0 V -2 7 3 5 Reverse Diode Diode continous forward current I S - - 80 A Diode pulse current I S,pulse - - 385 Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C - 0.96 1.2 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 15 nC 6) See figure 16 for gate charge parameter definition T C=25 °C Values V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=20 A, R G=2.7 Ω V DD=15 V, I D=40 A, V GS=0 to 5 V Rev. 1.4 page 3 2004-03-15

IPI04N03LA, IPP04N03LA

1 Power dissipation 2 Drain current

P tot=f(T C) I D=f(T C); V GS≥10 V 3 Safe operation area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 10 ms DC 100 1000 0.1 1 10 100 V DS [V] I D [A] limited by on-state resistance single pulse0.01 0.02 0.05 0.1 0.2 0.5 0.001 0.01 0.1 0 0 0 0 0 0 1 t p [s] Z thJC [K/W] 100 120 0 50 100 150 200 T C [°C] P tot [W] 100 0 50 100 150 200 T C [°C] I D [A] 10-6 10-5 10-4 10-3 10-2 10-1 100 Rev. 1.4 page 4 2004-03-15

IPI04N03LA, IPP04N03LA 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 3 V 3.2 V 3.5 V 3.8 V 4.1 V 4.5 V 10 V 0 20 40 60 80 100 120 140 I D [A] R DS(on) [mΩ] 25 °C 175 °C 100 120 140 160 012345 V GS [V] I D [A] 100 120 0 2 04 06 08 0 I D [A] g fs [S] 2.8 V 3 V 3.2 V 3.5 V 3.8 V 4.1 V

4.5 V10 V

V DS [V] I D [A] Rev. 1.4 page 5 2004-03-15

IPI04N03LA, IPP04N03LA 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=55 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98 % -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ] 60 µA 600 µA 0.5 1.5 2.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] Ciss Coss Crss 104 103 102 01 0 2 0 3 0 V DS [V] C [pF] 25 °C175 °C 25°C 98% 175°C 98% 103 102 101 100 0 0.5 1 1.5 2 V SD [V] I F [A] Rev. 1.4 page 6 2004-03-15

IPI04N03LA, IPP04N03LA 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=40 A pulsed parameter: Tj(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA 5 V 15 V 20 V 0 1 02 03 04 05 0 Q gate [nC] V GS [V] -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C150 °C 100 1 10 100 1000 t AV [µs] I AV [A] Rev. 1.4 page 7 2004-03-15

IPI04N03LA, IPP04N03LA Package Outline P-TO263-3-2: Outline Footprint Packaging Dimensions in mm Rev. 1.4 page 8 2004-03-15

IPI04N03LA, IPP04N03LA P-TO262-3-1: Outline P-TO220-3-1: Outline Packaging Dimensions in mm Rev. 1.4 page 9 2004-03-15

IPI04N03LA, IPP04N03LA Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts started herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.4 page 10 2004-03-15