IPP048N12N3G INFINEON | Alldatasheet

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Technical content

Features

  • N-channel, normal level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on)
  • 175 °C operating temperature
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC1) for target application
  • Ideal for high-frequency switching and synchronous rectification
  • Halogen-free according to IEC61249-2-21 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C2) 100 A T C=100 °C 100 Pulsed drain current3) I D,pulse T C=25 °C 400 Avalanche energy, single pulse E AS I D=100 A, R GS=25 Ω 740 mJ Reverse diode dv /dt dv /dt I D=100 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage 4) V GS ±20 V Power dissipation P tot T C=25 °C 300 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value V DS 120 V R DS(on),max 4.8 mΩ I D 100 A Product Summary Type Package Marking IPP048N12N3 G PG-TO220-3 048N12N PG-TO220-3 Rev. 2.1 page 1 2010-07-01

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 0.5 K/W Thermal resistance, R thJA minimal footprint - - 62 junction - ambient 6 cm2 cooling area5) -- 4 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 120 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=230 µA 234 Zero gate voltage drain current I DSS V DS=120 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=120 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=100 A - 4.1 4.8 mΩ Gate resistance R G - 1.8 - Ω Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=100 A 81 162 - S 1)J-STD20 and JESD22 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Values 4) Tjmax=150 °C and duty cycle D=0.01 for Vgs<-5V 2) Current is limited by bondwire; with an R thJC=0.5 K/W the chip is able to carry 161 A. 3) See figure 3 Rev. 2.1 page 2 2010-07-01

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 9030 12000 pF Output capacitance C oss - 1150 1530 Reverse transfer capacitance C rss -5 4 8 1 Turn-on delay time t d(on) -3 1- n s Rise time t r -5 5- Turn-off delay time t d(off) -6 4- Fall time t f -1 9- Gate Charge Characteristics6) Gate to source charge Q gs -4 6- n C Gate to drain charge Q gd -3 3- Switching charge Q sw -5 2- Gate charge total Q g - 137 182 Gate plateau voltage V plateau - 5.1 - V Output charge Q oss V DD=60 V, V GS=0 V - 158 210 nC Reverse Diode Diode continous forward current I S - - 100 A Diode pulse current I S,pulse - - 400 Diode forward voltage V SD V GS=0 V, I F=100 A, T j=25 °C - 1.0 1.2 V Reverse recovery time t rr - 113 ns Reverse recovery charge Q rr - 315 nC 6) See figure 16 for gate charge parameter definition V R=60 V, I F=I S, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=60 V, f =1 MHz V DD=60 V, V GS=10 V, I D=50 A, R G=1.6 Ω V DD=60 V, I D=100 A, V GS=0 to 10 V Rev. 2.1 page 3 2010-07-01

1 Power dissipation 2 Drain current

P tot=f(T C) I D=f(T C); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 10 msDC 10310210110010-1 103 102 101 100 10-1 V DS [V] I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10010-110-210-310-410-5 100 10-1 10-2 10-3 t p [s] Z thJC [K/W] 100 150 200 250 300 350 0 50 100 150 200 T C [°C] P tot [W] 100 120 0 50 100 150 200 T C [°C] I D [A] Rev. 2.1 page 4 2010-07-01

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 4.5 V 5 V 5.5 V 6 V 10 V 0 50 100 150 I D [A] R DS(on) [mΩ] 25 °C175 °C 100 150 200 250 300 02468 V GS [V] I D [A] 120 160 200 0 50 100 150 I D [A] g fs [S] 4.5 V 5 V 5.5 V 6 V 6.5 V 7 V 8 V 10 V 160 240 320 400 012345 V DS [V] I D [A] Rev. 2.1 page 5 2010-07-01

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=100 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98 % -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ] 230 µA 2300 µA 0.5 1.5 2.5 3.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] Ciss Coss Crss 105 104 103 102 101 0 2 04 06 08 0 V DS [V] C [pF] 25 °C 175 °C 25 °C, 98% 175 °C, 98% 103 102 101 100 0 0.5 1 1.5 2 V SD [V] I F [A] Rev. 2.1 page 6 2010-07-01

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=100 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA 24 V 60V 96 V 0 50 100 150 Q gate [nC] V GS [V] 105 110 115 120 125 130 135 -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] V GS Q gate V gs(t h ) Q g(th) Q gs Q gd Q sw Q g 25 °C100 °C 150 °C 103102101100 103 102 101 100 t AV [µs] I AS [A] Rev. 2.1 page 7 2010-07-01

PG-TO220-3: Outline Rev. 2.1 page 8 2010-07-01

81726 Munich, Germany

© 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 9 2010-07-01