IPB048N06LG INFINEON | Alldatasheet

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Technical content

Features

  • For fast switching converters and sync. rectification
  • N-channel enhancement - logic level
  • 175 °C operating temperature
  • Avalanche rated
  • Pb-free lead plating, RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C1) 100 A T C=100 °C 100 Pulsed drain current I D,pulse T C=25 °C2) 400 Avalanche energy, single pulse E AS I D=100 A, R GS=25 Ω 810 mJ Reverse diode dv /dt dv /dt I D=100 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 300 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value 2) See figure 3 1) Current is limited by bondwire; with an RthJC=0.5 the chip is able to carry 161A V DS 60 V R DS(on),max SMDversion 4.4 mΩ I D 100 A Product Summary Type IPP048N06L IPB048N06L Marking 048N06L 048N06L Rev. 1.11 page 1 2006-04-20

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 0.5 K/W SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) -- 4 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=270 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.01 1 µA V DS=60 V, V GS=0 V, T j=125 °C - 1 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=100 A - 3.7 4.7 mΩ V GS=4.5 V, I D=66 A - 4.4 5.7 V GS=10 V, I D=100 A, SMD version 3.4 4.4 V GS=4.5 V, I D=66A, SMD version 4.1 5.4 Gate resistance R G - 1.9 - Ω Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=100 A 92 183 - S 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Values Rev. 1.11 page 2 2006-04-20

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 5700 7600 pF Output capacitance C oss - 1500 2000 Reverse transfer capacitance C rss - 350 525 Turn-on delay time t d(on) -1 8 2 7 n s Rise time t r -2 5 3 8 Turn-off delay time t d(off) - 98 150 Fall time t f -2 4 3 6 Gate Charge Characteristics4) Gate to source charge Q gs -2 0 2 6 n C Gate charge at threshold Q g(th) - 9.1 12 Gate to drain charge Q gd -5 4 8 1 Switching charge Q sw -6 4 9 5 Gate charge total Q g - 169 225 Gate plateau voltage V plateau - 3.5 - V Output charge Q oss V DD=30 V, V GS=0 V -4 7 6 3 Reverse Diode Diode continous forward current I S - - 100 A Diode pulse current I S,pulse - - 400 Diode forward voltage V SD V GS=0 V, I F=100 A, T j=25 °C - 0.93 1.3 V Reverse recovery time t rr -6 5 8 0 n s Reverse recovery charge Q rr - 125 160 nC 4) See figure 16 for gate charge parameter definition V R=30 V, I F=I S, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=4.5 V, I D=100 A, R G=1.3 Ω V DD=30 V, I D=100 A, V GS=0 to 10 V Rev. 1.11 page 3 2006-04-20

1 Power dissipation 2 Drain current

P tot=f(T C); V GS≥6 V I D=f(T C); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 10 ms DC 10210110010-1 102 101 100 10-1 V DS [V] I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10010-110-210-310-410-510-6 100 10-1 10-2 10-3 t p [s] Z thJC [K/W] 100 150 200 250 300 350 0 50 100 150 200 T C [°C] P tot [W] 100 120 0 50 100 150 200 T C [°C] I D [A] Rev. 1.11 page 4 2006-04-20

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 3.5 V 4 V 4.5 V 5 V 5.5 V 6 V 10 V 0 40 80 120 160 200 I D [A] R DS(on) [mΩ ] 25 °C 175 °C 100 120 140 160 180 200 01234 V GS [V] I D [A] 120 160 200 240 0 40 80 120 160 200 I D [A] g fs [S] 3 V 3.5 V 4 V 5.5 V 4.5 V 10V 120 160 200 240 0123 V DS [V] I D [A] Rev. 1.11 page 5 2006-04-20

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=100 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98 % -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ ] 270 µA 2700 µA 0.5 1.5 2.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] Ciss Coss Crss 105 104 103 102 0 1 02 03 04 05 0 V DS [V] C [pF] 25 °C 175 °C 25 °C 98% 175 °C 98% 102 101 100 10-1 0 0.5 1 1.5 2 2.5 V SD [V] I F [A] Rev. 1.11 page 6 2006-04-20

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=100 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA 12V 30 V 48 V 0 40 80 120 160 200 Q gate [nC] V GS [V] -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] V GS Q gate V gs(t h ) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 150 °C 103102101100 103 102 101 100 t AV [µs] I AV [A] Rev. 1.11 page 7 2006-04-20

PG-TO-263 (D²-Pak) Rev. 1.11 page 8 2006-04-20

PG-TO220-3: Outline Rev. 1.11 page 9 2006-04-20

81726 München, Germany

© Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby non-infringement of intellectual property rights of any third party Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.11 page 10 2006-04-20