IPP045N10N3G_16 INFINEON | Alldatasheet

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Technical content

Features

  • N-channel, normal level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on)
  • 175 °C operating temperature
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC1) for target application
  • Ideal for high-frequency switching and synchronous rectification
  • Halogen-free according to IEC61249-2-21 Maximum ratings, at T A=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C2) 100 A T C=100 °C 100 Pulsed drain current2) I D,pulse T C=25 °C 400 Avalanche energy, single pulse E AS I D=100 A, R GS=25 W 340 mJ Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 214 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value 1)J-STD20 and JESD22 2) See figure 3 VDS 100 V RDS(on),max (TO 263) 4.2 mW ID 100 A Product Summary Type IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G Marking 042N10N 045N10N 045N10N Rev. 2.8 page 1 2016-08-17

IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 0.7 K/W Thermal resistance, R thJA minimal footprint - - 62 junction - ambient 6 cm2 cooling area3) - - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 100 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=150 µA 2 2.7 3.5 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=100 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=100 A, TO 220, TO 262 - 3.9 4.5 mW V GS=10 V, I D=50 A, TO263 - 3.6 4.2 V GS=6 V, I D=50 A, TO 220, TO 262 - 4.7 7.7 V GS=6 V, I D=50 A, TO263 - 4.4 7.4 Gate resistance R G - 1.4 - W Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=100 A 73 145 - S 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Values Rev. 2.8 page 2 2016-08-17

IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 6320 8410 pF Output capacitance C oss - 1210 1610 Reverse transfer capacitance C rss - 41 - Turn-on delay time t d(on) - 27 - ns Rise time t r - 59 - Turn-off delay time t d(off) - 48 - Fall time t f - 14 - Gate Charge Characteristics4) Gate to source charge Q gs - 30 39 nC Gate to drain charge Q gd - 16 - Switching charge Q sw - 27 - Gate charge total Q g - 88 117 Gate plateau voltage V plateau - 4.7 - V Output charge Q oss V DD=50 V, V GS=0 V - 122 162 nC Reverse Diode Diode continous forward current I S - - 100 A Diode pulse current I S,pulse - - 400 Diode forward voltage V SD V GS=0 V, I F=100 A, T j=25 °C - 1.0 1.2 V Reverse recovery time t rr - 68 - ns Reverse recovery charge Q rr - 135 - nC 4) See figure 16 for gate charge parameter definition V R=50 V, I F=I S, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=50 A, R G,ext=1.6 W V DD=50 V, I D=100 A, V GS=0 to 10 V Rev. 2.8 page 3 2016-08-17

IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G

1 Power dissipation 2 Drain current

P tot=f(T C) I D=f(T C); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 10 ms DC 10-1 100 101 102 103 10-1 100 101 102 103 ID [A] VDS [V] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-6 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 ZthJC [K/W] tp [s] 100 150 200 250 0 50 100 150 200 Ptot [W] TC [°C] 100 120 0 50 100 150 200 ID [A] TC [°C] Rev. 2.8 page 4 2016-08-17

IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 4.5 V 5 V 6 V 7.5 V 10 V 0 50 100 150 RDS(on) [mW] ID [A] 25 °C 175 °C 100 150 200 0 2 4 6 8 ID [A] VGS [V] 120 160 200 0 50 100 150 gfs [S] ID [A] 4.5 V 5 V 5.5 V 6 V 7.5 V 10 V 160 240 320 400 0 1 2 3 4 5 ID [A] VDS [V] Rev. 2.8 page 5 2016-08-17

IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=100 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98 % -60 -20 20 60 100 140 180 RDS(on) [mW] Tj [°C] 150 µA 1500 µA 0.5 1.5 2.5 3.5 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [°C] Ciss Coss Crss 101 102 103 104 0 20 40 60 80 C [pF] VDS [V] 25 °C 175 °C 25 °C, 98% 175 °C, 98% 100 101 102 103 0 0.5 1 1.5 2 IF [A] VSD [V] Rev. 2.8 page 6 2016-08-17

IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=100 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA 20 V 50 V 80 V 0 20 40 60 80 100 VGS [V] Qgate [nC] 100 105 110 -60 -20 20 60 100 140 180 VBR(DSS) [V] Tj [°C] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 150 °C 100 1000 1 10 100 1000 IAS [A] tAV [µs] Rev. 2.8 page 7 2016-08-17

IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G PG-TO220-3: Outline Rev. 2.8 page 8 2016-08-17

IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G PG-TO262-3 Rev. 2.8 page 9 2016-08-17

IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G PG-TO-263 (D²-Pak) Rev. 2.8 page 10 2016-08-17

100VOptiMOSª3PowerTransistor IPB042_IPP_IPI_045N10N3G Rev.2.8,2016-08-23 RevisionHistory IPB042_IPP_IPI_045N10N3 G Revision:2016-08-23,Rev.2.8 Previous Revision Revision Date Subjects (major changes since last revision) 2.8 2016-08-23 Inclusion "x" axes values in diagram 4 TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.