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Technical content

Features

  • N-channel, normal level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on)
  • 175 °C operating temperature
  • Pb-free lead plating; RoHS compliant, halogen free
  • Qualified according to JEDEC1) for target application
  • Ideal for high-frequency switching and synchronous rectification Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C2) 120 A T C=100 °C 120 Pulsed drain current3) I D,pulse T C=25 °C 480 Avalanche energy, single pulse E AS I D=100 A, R GS=25 W 900 mJ Gate source voltage 4) V GS ±20 V Power dissipation P tot T C=25 °C 300 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value VDS 120 V RDS(on),max (TO-263) 3.8 mW ID 120 A Product Summary Type IPB038N12N3 G IPI041N12N3 G IPP041N12N3 G Marking 038N12N 041N12N 041N12N Rev. 2.3 page 1 2014-04-15

IPP041N12N3 G IPB038N12N3 G Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 0.5 K/W Thermal resistance, R thJA minimal footprint - - 62 junction - ambient 6 cm2 cooling area5) - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 120 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=270 µA 2 3 4 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=100 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=100 A - 3.5 4.1 mW V GS=10 V, I D=100 A, TO263 - 3.2 3.8 Gate resistance R G - 1.4 - W Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=100 A 83 165 - S 1)J-STD20 and JESD22 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Values 4) Tjmax=150 °C and duty cycle D=0.01 for Vgs<-5V 2) Current is limited by bondwire; with an R thJC=0.5 K/W the chip is able to carry 182 A. 3) See figure 3 Rev. 2.3 page 2 2014-04-15

IPP041N12N3 G IPB038N12N3 G Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 10400 13800 pF Output capacitance C oss - 1320 1760 Reverse transfer capacitance C rss - 61 - Turn-on delay time t d(on) - 35 - ns Rise time t r - 52.0 - Turn-off delay time t d(off) - 70 - Fall time t f - 21 - Gate Charge Characteristics6) Gate to source charge Q gs - 52 - nC Gate to drain charge Q gd - 37 - Switching charge Q sw - 58 - Gate charge total Q g - 158 211 Gate plateau voltage V plateau - 5.0 - V Output charge Q oss V DD=60.1 V, V GS=0 V - 182 243 nC Reverse Diode Diode continous forward current I S - - 120 A Diode pulse current I S,pulse - - 480 Diode forward voltage V SD V GS=0 V, I F=100 A, T j=25 °C - 0.9 1.2 V Reverse recovery time t rr - 123 ns Reverse recovery charge Q rr - 356 - nC 6) See figure 16 for gate charge parameter definition V R=60 V, I F=I S, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=60 V, f =1 MHz V DD=60 V, V GS=10 V, I D=100 A, R G,ext=1.6 W V DD=60.1 V, I D=100 A, V GS=0 to 10 V Rev. 2.3 page 3 2014-04-15

IPP041N12N3 G IPB038N12N3 G

1 Power dissipation 2 Drain current

P tot=f(T C) I D=f(T C); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 10 ms DC 10-1 100 101 102 103 100 101 102 103 ID [A] VDS [V] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 ZthJC [K/W] tp [s] 100 150 200 250 300 350 0 50 100 150 200 Ptot [W] TC [°C] 100 120 140 0 50 100 150 200 ID [A] TC [°C] Rev. 2.3 page 4 2014-04-15

IPP041N12N3 G IPB038N12N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 4.5 V 5 V 5.5 V 6 V 10 V 0 50 100 150 RDS(on) [mW] ID [A] 25 °C 175 °C 100 150 200 250 300 0 2 4 6 8 ID [A] VGS [V] 120 160 200 0 50 100 150 gfs [S] ID [A] 4.5 V 5 V 5.5 V 6 V 6.5 V 7 V 10 V 160 240 320 400 0 1 2 3 4 5 ID [A] VDS [V] Rev. 2.3 page 5 2014-04-15

IPP041N12N3 G IPB038N12N3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=100 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98 % -60 -20 20 60 100 140 180 RDS(on) [mW] Tj [°C] 270 µA 2700 µA 0.5 1.5 2.5 3.5 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [°C] Ciss Coss Crss 101 102 103 104 105 0 20 40 60 80 100 C [pF] VDS [V] 25 °C 175 °C 25 °C, 98% 175 °C, 98% 100 101 102 103 0 0.5 1 1.5 2 IF [A] VSD [V] Rev. 2.3 page 6 2014-04-15

IPP041N12N3 G IPB038N12N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=100 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA 24 V 60 V 96 V 0 50 100 150 200 VGS [V] Qgate [nC] 100 105 110 115 120 125 130 135 140 -60 -20 20 60 100 140 180 VBR(DSS) [V] Tj [°C] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Qg 25 °C 100 °C 150 °C 100 1000 1 10 100 1000 IAS [A] tAV [µs] Rev. 2.3 page 7 2014-04-15

IPP041N12N3 G IPB038N12N3 G PG-TO220-3: Outline Rev. 2.3 page 8 2014-04-15

IPP041N12N3 G IPB038N12N3 G Rev. 2.3 page 9 2014-04-15

IPP041N12N3 G IPB038N12N3 G PG-TO-263 (D²-Pak) Rev. 2.3 page 10 2014-04-15

IPP041N12N3 G IPB038N12N3 G Published by Infineon Technologies AG

81726 München, Germany

© Infineon Technologies AG 2014. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 page 11 2014-04-15