IPP029N06N INFINEON | Alldatasheet

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MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V IPP029N06N DataSheet Rev.2.6 Final PowerManagement&Multimarket

OptiMOSTMPower-Transistor,60V IPP029N06N Rev.2.6,2015-02-10Final Data Sheet tab TO-220-3 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 1Description

Features

  • OptimizedforhighperformanceSMPS,e.g.sync.rec.
  • 100%avalanchetested
  • Superiorthermalresistance
  • N-channel
  • QualifiedaccordingtoJEDEC1)fortargetapplications
  • Pb-freeleadplating;RoHScompliant
  • Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 2.9 mΩ ID 100 A QOSS 65 nC QG(0V..10V) 56 nC Type/OrderingCode Package Marking RelatedLinks IPP029N06N PG-TO220-3 029N06N - 1) J-STD20 and JESD22

OptiMOSTMPower-Transistor,60V IPP029N06N Rev.2.6,2015-02-10Final Data Sheet TableofContents

OptiMOSTMPower-Transistor,60V IPP029N06N Rev.2.6,2015-02-10Final Data Sheet 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID 100 100 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TC=25°C,RthJA=50K/W Pulsed drain current1) ID,pulse - - 400 A TC=25°C Avalanche energy, single pulse2) EAS - - 110 mJ ID=100A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot 136

3.0 W TC=25°C

TA=25°C,RthJA=50K/W Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 3Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case, bottom RthJC - 0.7 1.1 K/W - Device on PCB, minimal footprint RthJA - - 62 K/W - Device on PCB, 6 cm² cooling area3) RthJA - - 40 K/W - Soldering temperature, wave and reflow soldering are allowed Tsold - - 260 °C Reflow MSL1 1) See figure 3 for more detailed information 2) See figure 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.

OptiMOSTMPower-Transistor,60V IPP029N06N Rev.2.6,2015-02-10Final Data Sheet 4Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 60 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2.1 2.8 3.3 V VDS=VGS,ID=75µA Zero gate voltage drain current IDSS 0.5 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 2.7 3.3 2.9 4.4 mΩ VGS=10V,ID=100A VGS=6V,ID=25A Gate resistance1) RG 0.65 1.3 1.95 Ω - Transconductance gfs 80 160 - S |VDS|>2|ID|RDS(on)max,ID=100A Table5Dynamiccharacteristics1) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 4100 5125 pF VGS=0V,VDS=30V,f=1MHz Output capacitance Coss - 980 1225 pF VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss - 39 78 pF VGS=0V,VDS=30V,f=1MHz Turn-on delay time td(on) - 17 - ns VDD=30V,VGS=10V,ID=100A, RG,ext,ext=3Ω Rise time tr - 15 - ns VDD=30V,VGS=10V,ID=100A, RG,ext,ext=3Ω Turn-off delay time td(off) - 30 - ns VDD=30V,VGS=10V,ID=100A, RG,ext,ext=3Ω Fall time tf - 8 - ns VDD=30V,VGS=10V,ID=100A, RG,ext,ext=3Ω 1) Defined by design. Not subject to production test

OptiMOSTMPower-Transistor,60V IPP029N06N Rev.2.6,2015-02-10Final Data Sheet Table6Gatechargecharacteristics1) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 20 - nC VDD=30V,ID=100A,VGS=0to10V Gate charge at threshold Qg(th) - 11 - nC VDD=30V,ID=100A,VGS=0to10V Gate to drain charge2) Qgd - 11 15 nC VDD=30V,ID=100A,VGS=0to10V Switching charge Qsw - 19 - nC VDD=30V,ID=100A,VGS=0to10V Gate charge total2) Qg - 56 66 nC VDD=30V,ID=100A,VGS=0to10V Gate plateau voltage Vplateau - 4.8 - V VDD=30V,ID=100A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 49 - nC VDS=0.1V,VGS=0to10V Output charge2) Qoss - 65 82 nC VDD=30V,VGS=0V Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - 120 A TC=25°C Diode pulse current IS,pulse - - 480 A TC=25°C Diode forward voltage VSD - 1.0 1.2 V VGS=0V,IF=100A,Tj=25°C Reverse recovery time2) trr - 54 86 ns VR=30V,IF=100A,diF/dt=100A/µs Reverse recovery charge Qrr - 77 - nC VR=30V,IF=100A,diF/dt=100A/µs 1) See ″Gate charge waveforms″ for parameter definition 2) Defined by design. Not subject to production test

OptiMOSTMPower-Transistor,60V IPP029N06N Rev.2.6,2015-02-10Final Data Sheet 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 175 200 100 120 140 160 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 125 150 175 200 100 120 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tp);parameter:D=tp/T

OptiMOSTMPower-Transistor,60V IPP029N06N Rev.2.6,2015-02-10Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 120 160 200 240 280 320 360 400 7 V 10 V 6 V 5.5 V 5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 160 240 320 400 5 V 5.5 V 6 V 7 V 10 V RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 120 160 200 240 280 320 360 400 175 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.forwardtransconductance ID[A] gfs[S] 100 100 150 200 gfs=f(ID);Tj=25°C

OptiMOSTMPower-Transistor,60V IPP029N06N Rev.2.6,2015-02-10Final Data Sheet Diagram9:Drain-sourceon-stateresistance Tj[°C] RDS(on)[mΩ ] -60 -20 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max typ RDS(on)=f(Tj);ID=100A;VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -60 -20 100 140 180 750 µA 75 µA VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances VDS[V] C[pF] 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 100 101 102 103 25 °C 175 °C IF=f(VSD);parameter:Tj

OptiMOSTMPower-Transistor,60V IPP029N06N Rev.2.6,2015-02-10Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 100 101 102 103 100 101 102 103 25 °C 100 °C 125 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj(start) Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 12 V 30 V 48 V VGS=f(Qgate);ID=100Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 VBR(DSS)=f(Tj);ID=1mA Gate charge waveforms

OptiMOSTMPower-Transistor,60V IPP029N06N Rev.2.6,2015-02-10Final Data Sheet 6PackageOutlines Figure1OutlinePG-TO220-3,dimensionsinmm/inches

OptiMOSTMPower-Transistor,60V IPP029N06N Rev.2.6,2015-02-10Final Data Sheet RevisionHistory IPP029N06N Revision:2015-02-10,Rev.2.6 Previous Revision Revision Date Subjects (major changes since last revision) 2.5 2014-07-25 Rev.2.5 2.6 2015-02-10 Insert Rg min value = 0.65 Ohm WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.