IPP023NE7N3G INFINEON | Alldatasheet

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Technical content

Features

  • Optimized technology for synchronous rectification
  • Ideal for high frequency switching and DC/DC converters
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance RDS(on)
  • N-channel, normal level
  • 100% avalanche tested
  • Pb-free plating; RoHS compliant, halogen free
  • Qualified according to JEDEC 1) for target applications Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C2) 120 A T C=100 °C 120 Pulsed drain current2) I D,pulse T C=25 °C 480 Avalanche energy, single pulse3) E AS I D=100 A, R GS=25 Ω 1100 mJ Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 300 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 3) See figure 13 for more detailed information Value 1)J-STD20 and JESD22 2) See figure 3 for more detailed information V DS 75 V R DS(on),max 2.3 mΩ I D 120 A Product Summary Type IPP023NE7N3 G IPI023NE7N3 G Marking 023NE7N 023NE7N Rev. 2.11 page 1 2009-11-11

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 0.5 K/W Thermal resistance, R thJA minimal footprint - - 62 junction - ambient 6 cm2 cooling area4) -- 4 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 75 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=273 µA 2.3 3.1 3.8 Zero gate voltage drain current I DSS V DS=75 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=75 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=100 A - 2.1 2.3 mΩ Gate resistance R G - 2.7 - Ω Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=100 A 98 195 - S Values 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.11 page 2 2009-11-11

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 10800 14400 pF Output capacitance C oss - 2420 3220 Reverse transfer capacitance C rss - 110 - Turn-on delay time t d(on) -1 9- n s Rise time t r -2 6- Turn-off delay time t d(off) -7 0- Fall time t f -2 2- Gate Charge Characteristics5) Gate to source charge Q gs -5 4- n C Gate to drain charge Q gd -3 1- Switching charge Q sw -5 1- Gate charge total Q g - 155 206 Gate plateau voltage V plateau - 5.0 - V Output charge Q oss V DD=37.5 V, V GS=0 V - 160 212 nC Reverse Diode Diode continous forward current I S - - 120 A Diode pulse current I S,pulse - - 480 Diode forward voltage V SD V GS=0 V, I F=100 A, T j=25 °C - 0.9 1.2 V Reverse recovery time t rr -7 2- n s Reverse recovery charge Q rr - 129 - nC 5) See figure 16 for gate charge parameter definition V R=37.5 V, I F=I S, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=37.5 V, f =1 MHz V DD=37.5 V, V GS=10 V, I D=100 A, R G=1.6 Ω V DD=37.5 V, I D=100 A, V GS=0 to 10 V Rev. 2.11 page 3 2009-11-11

1 Power dissipation 2 Drain current

P tot=f(T C) I D=f(T C); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 10 ms DC 10210110010-1 103 102 101 100 V DS [V] I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10010-110-210-310-410-5 100 10-1 10-2 t p [s] Z thJC [K/W] 100 150 200 250 300 350 0 50 100 150 200 T C [°C] P tot [W] 100 120 140 0 50 100 150 200 T C [°C] I D [A] Rev. 2.11 page 4 2009-11-11

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 5 V 5.5 V 6 V 7 V 10 V 0 100 200 300 400 I D [A] R DS(on) [mΩ] 25 °C175 °C 100 150 200 250 300 350 400 02468 V GS [V] I D [A] 100 150 200 250 0 50 100 150 I D [A] g fs [S] 4.5 V 5 V 5.5 V 6 V

7 V10 V

V DS [V] I D [A] Rev. 2.11 page 5 2009-11-11

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=100 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ max -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ] 273 µA 2730 µA 0.5 1.5 2.5 3.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] Ciss Coss Crss 105 104 103 102 101 0 1 53 04 56 07 5 V DS [V] C [pF] 25 °C 175 °C 25 °C, max 175 °C, max 103 102 101 100 0 0.5 1 1.5 2 V SD [V] I F [A] Rev. 2.11 page 6 2009-11-11

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=100 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA 20 V 40 V 60 V 0 40 80 120 160 Q gate [nC] V GS [V] -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] V GS Q gate V gs(t h ) Q g(th) Q gs Q gd Q sw Q g 25 °C100 °C150 °C 100 1000 0.1 1 10 100 1000 10000 t AV [µs] I AV [A] Rev. 2.11 page 7 2009-11-11

PG-TO262-3 (I²-Pak) Rev. 2.11 page 8 2009-11-11

Rev. 2.11 page 9 2009-11-11

81726 Munich, Germany

© 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.11 page 10 2009-11-11