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MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C7 650VCoolMOS™C7PowerTransistor IPL65R230C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket

650VCoolMOS™C7PowerTransistor IPL65R230C7 Rev.2.0,2013-04-29Final Data Sheet ThinPAK8x8 Drain Pin 5 Gate Pin 1 Power Source Pin 3,4 Driver Source Pin 2 1Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. CoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation.Theproductportfolio providesallbenefitsoffastswitchingsuperjunctionMOSFETsoffering betterefficiency,reducedgatecharge,easyimplementationand outstandingreliability.

Features

  • IncreasedMOSFETdv/dtruggedness
  • BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
  • ThinPAKSMDPackagewithverylowparasiticinductancetoenablefast andreliableswitchingwithminimumofsizetoincreasepower-density
  • Easytouse/driveduetodriversourcepinforbettercontrolofthegate.
  • Pb-freeplating,halogenfreemoldcompound
  • QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Benefits
  • Enablinghighersystemefficiencybylowerswitchinglosses
  • Enablinghigherfrequency/increasedpowerdensitysolutions
  • Systemcost/sizesavingsduetoreducedcoolingrequirements
  • Highersystemreliabilityduetoloweroperatingtemperatures

Applications

PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server, Telecom,UPSandSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 230 mΩ Qg.typ 20 nC ID,pulse 41 A Eoss@400V 2.3 µJ Body diode di/dt 55 A/µs Type/OrderingCode Package Marking RelatedLinks IPL65R230C7 PG-VSON-4 65C7230 see Appendix A

650VCoolMOS™C7PowerTransistor IPL65R230C7 Rev.2.0,2013-04-29Final Data Sheet TableofContents

650VCoolMOS™C7PowerTransistor IPL65R230C7 Rev.2.0,2013-04-29Final Data Sheet 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current 1) ID

7 A TC=25°C

TC=100°C Pulsed drain current 2) ID,pulse - - 41 A TC=25°C Avalanche energy, single pulse EAS - - 48 mJ ID=4.8A; VDD=50V Avalanche energy, repetitive EAR - - 0.24 mJ ID=4.8A; VDD=50V Avalanche current, single pulse IAS - - 4.8 A - MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 67 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Mounting torque - - - n.a. Ncm - Continuous diode forward current IS - - 10 A TC=25°C Diode pulse current2) IS,pulse - - 41 A TC=25°C Reverse diode dv/dt 3) dv/dt - - 1 V/ns VDS=0...400V,ISD<=IS,Tj=25°C Maximum diode commutation speed dif/dt - - 55 A/µs VDS=0...400V,ISD<=IS,Tj=25°C Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min 1) Limited by Tj max. 2) Pulse width tp limited by Tj,max 3)IdenticallowsideandhighsideswitchwithidenticalRG

650VCoolMOS™C7PowerTransistor IPL65R230C7 Rev.2.0,2013-04-29Final Data Sheet 3Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 1.87 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint Thermal resistance, junction - ambient for SMD version RthJA - 35 45 °C/W Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. Reflow soldering temperature Tsold - - 260 °C reflow MSL3

650VCoolMOS™C7PowerTransistor IPL65R230C7 Rev.2.0,2013-04-29Final Data Sheet 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 650 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.24mA Zero gate voltage drain current IDSS - µA VDS=650,VGS=0V,Tj=25°C VDS=650,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.204 0.488 0.230 - Ω VGS=10V,ID=2.4A,Tj=25°C VGS=10V,ID=2.4A,Tj=150°C Gate resistance RG - 1 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 996 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 14 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related 1) Co(er) - 29 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related Co(tr) - 313 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 8 - ns VDD=400V,VGS=13V,ID=2.4A, RG=10Ω Rise time tr - 5 - ns VDD=400V,VGS=13V,ID=2.4A, RG=10Ω Turn-off delay time td(off) - 71 - ns VDD=400V,VGS=13V,ID=2.4A, RG=10Ω Fall time tf - 22 - ns VDD=400V,VGS=13V,ID=2.4A, RG=10Ω Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 5 - nC VDD=400V,ID=2.4A,VGS=0to10V Gate to drain charge Qgd - 6 - nC VDD=400V,ID=2.4A,VGS=0to10V Gate charge total Qg - 20 - nC VDD=400V,ID=2.4A,VGS=0to10V Gate plateau voltage Vplateau - 5.0 - V VDD=400V,ID=2.4A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

650VCoolMOS™C7PowerTransistor IPL65R230C7 Rev.2.0,2013-04-29Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.8 - V VGS=0V,IF=2.4A,Tj=25°C Reverse recovery time trr - 414 - ns VR=400V,IF=10A,diF/dt=55A/µs Reverse recovery charge Qrr - 3.1 - µC VR=400V,IF=10A,diF/dt=55A/µs Peak reverse recovery current Irrm - 13.6 - A VR=400V,IF=10A,diF/dt=55A/µs

650VCoolMOS™C7PowerTransistor IPL65R230C7 Rev.2.0,2013-04-29Final Data Sheet 5Electricalcharacteristicsdiagrams Table8 Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Table9 Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T

650VCoolMOS™C7PowerTransistor IPL65R230C7 Rev.2.0,2013-04-29Final Data Sheet Table10 Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Table11 Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 0.35 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 20 V 5.5 V 6 V 6.5 V 7 V 10 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -50 -25 100 125 150 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 98% typ RDS(on)=f(Tj);ID=2.4A;VGS=10V

650VCoolMOS™C7PowerTransistor IPL65R230C7 Rev.2.0,2013-04-29Final Data Sheet Table12 Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 400 V 120 V VGS=f(Qgate);ID=2.4Apulsed;parameter:VDD Table13 Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 10-1 100 101 102 125 °C 25 °C IF=f(VSD);parameter:Tj Diagram12:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 EAS=f(Tj);ID=4.8A;VDD=50V

650VCoolMOS™C7PowerTransistor IPL65R230C7 Rev.2.0,2013-04-29Final Data Sheet Table14 Diagram13:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 580 600 620 640 660 680 700 720 740 760 VBR(DSS)=f(Tj);ID=1mA Diagram14:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=250kHz Table15 Diagram15:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Eoss=f(VDS)

650VCoolMOS™C7PowerTransistor IPL65R230C7 Rev.2.0,2013-04-29Final Data Sheet 6TestCircuits Table16Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform t V ,I Irrm IF VDS 10 %Irrm trr tF tS QF QS dIF / dt dIrr / dt VDS(peak) Qrr = QF +QS trr =tF +tS VDS IF VDS IF Rg1 Rg 2 Rg1 = Rg 2 Table17switchingtimes(ss) Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table18Unclampedinductiveload(ss) Unclamped inductive load test circuit Unclamped inductive waveform VDS VD V(BR)DS ID VDS VDSID

650VCoolMOS™C7PowerTransistor IPL65R230C7 Rev.2.0,2013-04-29Final Data Sheet 7PackageOutlines Figure1OutlinePG-VSON-4,dimensionsinmm/inches

650VCoolMOS™C7PowerTransistor IPL65R230C7 Rev.2.0,2013-04-29Final Data Sheet 8AppendixA Table19RelatedLinks

  • IFXCoolMOSTMC7Webpage:www.infineon.com
  • IFXCoolMOSTMC7applicationnote:www.infineon.com
  • IFXCoolMOSTMC7simulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

650VCoolMOS™C7PowerTransistor IPL65R230C7 Rev.2.0,2013-04-29Final Data Sheet RevisionHistory IPL65R230C7 Revision:2013-04-29,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2013-04-29 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Edition2011-08-01 Publishedby InfineonTechnologiesAG 81726München,Germany ©2011InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.