IPI60R099CPA INFINEON | Alldatasheet

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Technical content

Features

• Worldwide best Rds,on in TO262 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS CPA is specially designed for: • DC/DC converters for Automotive Applications Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C A T C=100 °C Pulsed drain current1) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=11 A, V DD=50 V 800 mJ Avalanche energy, repetitive t AR 1),2) E AR I D=11 A, V DD=50 V Avalanche current, repetitive t AR 1),2) I AR A MOSFET dv /dt ruggedness d v /dt V DS=0...480 V V/ns Gate source voltage V GS static V Power dissipation P tot T C=25 °C W Operating temperature T j °C Storage temperature T stg ±20 -40 ... 150 Value 255 -40 150 1.2 V DS 600 V R DS(on),max 0.105 Ω Q g,typ 60 nC Product Summary Type Package Marking IPI60R099CPA PG-TO262-3-1 6R099A PG-TO262-3-1 Rev. 2.1 page 1 2009-03-25 not recommended for new designs

Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous diode forward current I S A Diode pulse current1) I S,pulse 93 Reverse diode dv /dt 3) dv /dt 15 V/ns Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 0.5 K/W R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C Soldering temperature, reflow soldering T sold MSL1, reflow acc. to IPC-JEDEC J-STD- 020C - - 245 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 600 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=1.2 mA 2.5 3 3.5 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C --5 µ A Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=18 A, T j=25 °C - 0.09 0.105 Ω V GS=10 V, I D=18 A, Gate resistance R G f =1 MHz, open drain - 1.3 - Ω Values Thermal resistance, junction - ambient Value T C=25 °C Rev. 2.1 page 2 2009-03-25 not recommended for new designs

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 2800 - pF Output capacitance C oss - 130 - Effective output capacitance, energy related4) C o(er) - 130 - Effective output capacitance, time related 5) C o(tr) - 340 - Turn-on delay time t d(on) -1 0- n s Rise time t r -5- Turn-off delay time t d(off) -6 0- Fall time t f -5- Gate Charge Characteristics Gate to source charge Q gs -1 4- n C Gate to drain charge Q gd -2 0- Gate charge total Q g -6 0 8 0 Gate plateau voltage V plateau - 5.0 - V Reverse Diode Diode forward voltage V SD V GS=0 V, I F=18 A, T j=25 °C - 0.9 1.2 V Reverse recovery time t rr - 450 - ns Reverse recovery charge Q rr -1 2- µ C Peak reverse recovery current I rrm -7 0- A 1) Pulse width t p limited by T j,max 2) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 3) I SD≤I D, di/dt≤100A/µs, V DClink=400V, V peak<V (BR)DSS, T j<T jmax, identical low side and high side switch 4) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 5) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Values V GS=0 V, V DS=100 V, f =1 MHz V DD=400 V, V GS=10 V, I D=18 A, R G=3.3 Ω V DD=400 V, I D=18 A, V GS=0 to 10 V V GS=0 V, V DS=0 V to 480 V V R=400 V, I F=I S, di F/dt =100 A/µs Rev. 2.1 page 3 2009-03-25 not recommended for new designs

1 Power dissipation 2 Safe operating area

P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 3 Max. transient thermal impedance 4 Typ. output characteristics ZthJC=f(tP) I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 100 200 300 0 40 80 120 160 T C [°C] P tot [W] 1 µs 10 µs 100 µs 1 ms 10 ms DC 103102101100 102 101 100 10-1 V DS [V] I D [A] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10010-110-210-310-410-5 100 10-1 10-2 t p [s] Z thJC [K/W] 4.5 V 5 V 5.5 V 6 V 7 V 8 V 10 V 20 V 105 120 0 5 10 15 20 V DS [V] I D [A] limited by on-state resistance Rev. 2.1 page 4 2009-03-25 not recommended for new designs

5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=18 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j typ 98 % 0.05 0.1 0.15 0.2 0.25 0.3 -60 -20 20 60 100 140 180 T j [°C] R DS(on) [Ω ] 25 °C 150 °C 120 160 02468 1 0 V GS [V] I D [A] 4.5 V 5 V 5.5 V 6 V

7 V8 V

V DS [V] I D [A] 5 V 5.5 V 6 V 6.5 V 7 V 20 V 0.1 0.2 0.3 0.4 0.5 0 1 02 03 04 05 0 I D [A] R DS(on) [Ω ] Rev. 2.1 page 5 2009-03-25 not recommended for new designs

9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=18 A pulsed I F=f(V SD) parameter: V DD parameter: T j

11 Avalanche energy 12 Drain-source breakdown voltage

E AS=f(T j); I D=11 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA 25 °C 150 °C 25 °C, 98% 150 °C, 98% 102 101 100 10-1 0 0.5 1 1.5 2 V SD [V] I F [A] 120 V 400 V 0 1 02 03 04 05 06 0 Q gate [nC] V GS [V] 540 580 620 660 700 -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] 200 400 600 800 25 75 125 175 T j [°C] E AS [mJ] Rev. 2.1 page 6 2009-03-25 not recommended for new designs

13 Typ. capacitances 14 Typ. Coss stored energy C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS) 0 100 200 300 400 500 600 V DS [V] E oss [µJ] Ciss Coss Crss 105 104 103 102 101 100 0 100 200 300 400 500 V DS [V] C [pF] Rev. 2.1 page 7 2009-03-25 not recommended for new designs

Definition of diode switching characteristics Rev. 2.1 page 8 2009-03-25 not recommended for new designs

PG-TO262-3-1: Outlines written approval of Infineon Technologies, if a failure of such components can reasonably be expected to user or other persons may be endangered. Dimensions in mm/inches Rev. 2.1 page 9 2009-03-25 not recommended for new designs

81726 München, Germany

© Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non‑infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 10 2009-03-25 not recommended for new designs

N° 040/10 2010-05-12 Page 1 of 1 Information on N-Channel MOSFET products designed for automotive

applications

Products affected: SalesName Package IPB60R099CPA PG-TO263-3-2 IPB60R199CPA PG-TO263-3-2 IPB60R299CPA PG-TO263-3-2 IPC60R075CPA Bare Die IPI60R099CPA PG-TO262-3-1 IPP60R099CPA PG-TO220-3-1 IPW60R045CPA PG-TO247-3-41 IPW60R075CPA PG-TO247-3-41 IPW60R099CPA PG-TO247-3-41 Dear Customer, The devices listed for this notification are sensitive to hard commutation of the conducting body diode. This operating condition can occur in half-bridge configurations used in ZVS phase shift and resonant switching PWM converters. Using the device under such conditions may result in violation of the datasheet specification limits and may lead to permanent damage of the device. Please take care that in the context of the application described above the datasheet limits are not exceeded. Best Regards Michael Paulu If you have any questions, please do not hesitate to contact your local Sales office. not recommended for new designs