IPB100N04S3-03 INFINEON | Alldatasheet

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Technical content

Features

  • N-channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green package (RoHS compliant)
  • Ultra low Rds(on)
  • 100% Avalanche tested Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25°C, V GS=10V1) 100 A T C=100°C, V GS=10V2) 100 Pulsed drain current2) I D,pulse T C=25 °C 400 Avalanche energy, single pulse E AS I D=80 A 898 mJ Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 214 W Operating and storage temperature T j, T stg -55 ... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value V DS 40 V R DS(on) (SMD Version) 2.5 mΩ I D 100 A Product Summary Type Package Marking IPB100N04S3-03 PG-TO263-3-2 3PN0403 IPI100N04S3-03 PG-TO262-3-1 3PN0403 IPP100N04S3-03 PG-TO220-3-1 3PN0403 PG-TO220-3-1 PG-TO262-3-1 PG-TO263-3-2 Rev. 1.0 page 1 2007-05-03

IPI100N04S3-03, IPP100N04S3-03 Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - 0.7 K/W Thermal resistance, junction - ambient, leaded R thJA -- 6 2 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) -- 4 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 40 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=150 µA 2.1 3.0 4.0 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C --1 µ A V DS=40 V, V GS=0 V, T j=125 °C2) - - 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance RDS(on) V GS=10 V, I D=80 A - 2.2 2.8 m Ω V GS=10 V, I D=80 A, SMD version - 1.9 2.5 Values Rev. 1.0 page 2 2007-05-03

IPI100N04S3-03, IPP100N04S3-03 Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics2) Input capacitance C iss - 7400 9600 pF Output capacitance C oss - 2000 2600 Reverse transfer capacitance Crss - 310 465 Turn-on delay time t d(on) -3 0- n s Rise time t r -1 6- Turn-off delay time t d(off) -4 6- Fall time t f -1 7- Gate Charge Characteristics2) Gate to source charge Q gs -3 8 5 0 n C Gate to drain charge Q gd -2 5 4 5 Gate charge total Q g - 110 145 Gate plateau voltage V plateau - 5.2 - V Reverse Diode Diode continous forward current2) I S - - 100 A Diode pulse current2) I S,pulse - - 400 Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C - 0.85 1.3 V Reverse recovery time2) t rr -6 0- n s Reverse recovery charge2) Q rr -9 5- n C T C=25 °C Values V GS=0 V, V DS=25 V, f =1 MHz V DD=20 V, V GS=10 V, I D=80 A, R G=3.3 Ω V DD=32 V, I D=80 A, V GS=0 to 10 V V R=20 V, I F=50A, di F/dt =100 A/µs 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 1) Current is limited by bondwire; with an R thJC = 0.7 K/W the chip is able to carry 218 A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos Rev. 1.0 page 3 2007-05-03

IPI100N04S3-03, IPP100N04S3-03

1 Power dissipation 2 Drain current

P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 100 1000 0.1 1 10 100 V DS [V] I D [A] single pulse 0.01 0.05 0.1 0.5 10010-110-210-310-410-510-6 100 10-1 10-2 10-3 t p [s] Z thJC [K/W] 100 150 200 250 0 50 100 150 200 T C [°C] P tot [W] 100 120 0 50 100 150 200 T C [°C] I D [A] Rev. 1.0 page 4 2007-05-03

IPI100N04S3-03, IPP100N04S3-03 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 80 A; V GS = 10 V parameter: T j 1.5 2.5 3.5 -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ ] -55 °C 25 °C 175 °C 100 200 300 400 500 600 2345678 V GS [V] I D [A] 5 V 5.5 V 6 V 6.5 V 7 V 10 V 100 200 300 400 500 600 0246 V DS [V] I D [A] 5 V 6.5 V 7 V 10 V 0 100 200 300 400 I D [A] R DS(on) [mΩ ] 5.5 V 6 V Rev. 1.0 page 5 2007-05-03

IPI100N04S3-03, IPP100N04S3-03 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I AS = f(t AV) parameter: T j parameter: Tj(start) 25°C 100°C150°C 100 1000 1 10 100 1000 t AV [µs] I AV [A] 25 °C175 °C 103 102 101 100 V SD [V] I F [A] Ciss Coss Crss 105 104 103 0 5 10 15 20 25 30 V DS [V] C [pF] 150µA 1500µA 1.5 2.5 3.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] Rev. 1.0 page 6 2007-05-03

IPI100N04S3-03, IPP100N04S3-03

13 Typical avalanche energy 14 Drain-source breakdown voltage

E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 80 A pulsed parameter: V DD -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] 8 V 32 V 0 20 40 60 80 100 120 Q gate [nC] V GS [V] 40 A 80 A 20 A 500 1000 1500 2000 2500 3000 3500 4000 25 75 125 175 T j [°C] E AS [mJ] V GS Qgate Q gs Qgd Q g V GS Qgate Q gs Qgd Q g Rev. 1.0 page 7 2007-05-03

IPI100N04S3-03, IPP100N04S3-03 Published by Infineon Technologies AG

81726 Munich, Germany

© Infineon Technologies AG 2007 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non‑infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2007-05-03

IPI100N04S3-03, IPP100N04S3-03

Revision History

Rev. 1.0 page 9 2007-05-03