IPDQ60T010S7 INFINEON | Alldatasheet

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Technical content

Features

  • Optimizedpriceperformanceinlow-frequencyswitchingapplications
  • Highpulsecurrentcapability
  • Seamlessdiagnosticsatthelowestsystemcost
  • Temperaturesensefeatureforprotectionandoptimizedthermaldevice utilizationcost Benefits
  • Reductionofexternalsensingelements,henceamorecompactdesign comparedtoelectromechanicaldevices
  • Increasedsystemperformance
  • Minimizedconductionlosses(eliminate/reduceheatsink)
  • Increasedsystemperformance
  • Morecompactandmorestraightforwarddesign
  • LowerBOMor/andTCOoveraprolongedlifetime
  • Morereliabilityandlongersystemlifetime Potentialapplications
  • Solidstaterelaysandcircuitbreakers(PLC,Energystorage)
  • Linerectificationinhighpower/performanceapplications(Computing, Telecom,UPSandSolar) Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:Thesourceandsensesourcepinsarenotexchangeable. Theirexchangemightleadtomalfunction.Forparalleling4pinMOSFET devicestheplacementofthegateresistorisgenerallyrecommendedtobe ontheDriverSourceinsteadoftheGate. Table1KeyPerformanceParameters Parameter Value Unit RDS(on),max 10 mΩ Qg,typ 318 nC VSD 0.82 V Pulsed ISD, IDS 796 A ESD class (HBM) 2 JEDEC JS-001 Type/OrderingCode Package Marking RelatedLinks IPDQ60T010S7 PG-HDSOP-22 60I010S7 see Appendix A

600VCoolMOSªSJS7APowerDevice IPDQ60T010S7 Rev.2.0,2024-03-21Final Data Sheet TableofContents

600VCoolMOSªSJS7APowerDevice IPDQ60T010S7 Rev.2.0,2024-03-21Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2MaximumMOSFETratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain current rating1) ID 174 50 A TC=25°C TC=25°C Current is limited by Tj max = 150°C Pulsed drain current2) ID,pulse - - 796 A TC=25°C Avalanche energy, single pulse EAS - - 612 mJ ID=6.3A; VDD=50V; see table 11 Avalanche current, single pulse IAS - - 6.3 A - MOSFET dv/dt ruggedness3) dv/dt - - 20 V/ns VDS=0Vto300V Gate source voltage (static) VGS -20 - 20 V static Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 694 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature1) Tj -55 - 150 °C - Extended operating junction temperature Tj 150 - 175 °C ≤50 h in the application lifetime Mounting torque - - - n.a. Ncm - Diode forward current rating IS - - 50 A TC=25°C Current is limited by Tj max = 150°C Diode pulse current1) IS,pulse - - 796 A TC=25°C Reverse diode dv/dt4) dv/dt - - 5 V/ns VDS=0to300V,ISD<=50A,Tj=25°C see table 9 Maximum diode commutation speed dif/dt - - 800 A/µs VDS=0to300V,ISD<=50A,Tj=25°C see table 9 Insulation withstand voltage VISO - - n.a. V - 1) Please consider the App Note: 600 V CoolMOSTM S7 with Temperature Sense for high delta TJ usage 2) Pulse width tp limited by Tj,max 3) The dv/dt has to be limited by appropriate gate resistor 4) Identical low side and high side switch

600VCoolMOSªSJS7APowerDevice IPDQ60T010S7 Rev.2.0,2024-03-21Final Data Sheet 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 0.18 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint Thermal resistance, junction - ambient for SMD version RthJA - 45 55 °C/W Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area. Tap exposed to air. PCB is vertical without air stream cooling. Soldering temperature, reflow soldering allowed Tsold - - 260 °C reflow MSL1

600VCoolMOSªSJS7APowerDevice IPDQ60T010S7 Rev.2.0,2024-03-21Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics For applications with applied blocking voltage >420V, it is required that the customer evaluates the impact of cosmic radiation effect in early design phase and contacts the Infineon sales office for the necessary technical support by Infineon Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 3.5 4.0 4.5 V VDS=VGS,ID=3.06mA Zero gate voltage drain current1) IDSS - µA VDS=600V,VGS=0V,Tj=25°C VDS=600V,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.01 0.022 0.010 - Ω VGS=12V,ID=50A,Tj=25°C VGS=12V,ID=50A,Tj=150°C Gate resistance RG - 0.45 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 11986 - pF VGS=0V,VDS=300V,f=250kHz Output capacitance Coss - 188 - pF VGS=0V,VDS=300V,f=250kHz Effective output capacitance, energy related2) Co(er) - 643 - pF VGS=0V,VDS=0to300V Effective output capacitance, time related3) Co(tr) - 5714 - pF ID=constant,VGS=0V,VDS=0to300V Output charge Qoss - 1714 - nC VGS=0V,VDS=0to300V Turn-on delay time td(on) - 32 - ns VDD=300V,VGS=13V,ID=50A, RG=3Ω ;seetable9 Rise time tr - 12 - ns VDD=300V,VGS=13V,ID=50A, RG=3Ω ;seetable9 Turn-off delay time td(off) - 170 - ns VDD=300V,VGS=13V,ID=50A, RG=3Ω ;seetable9 Fall time tf - 9 - ns VDD=300V,VGS=13V,ID=50A, RG=3Ω ;seetable9 1) Open 2)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to300V 3)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to300V

600VCoolMOSªSJS7APowerDevice IPDQ60T010S7 Rev.2.0,2024-03-21Final Data Sheet Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 69 - nC VDD=300V,ID=50A,VGS=0to12V Gate to drain charge Qgd - 105 - nC VDD=300V,ID=50A,VGS=0to12V Gate charge total Qg - 318 - nC VDD=300V,ID=50A,VGS=0to12V Gate plateau voltage Vplateau - 5.7 - V VDD=300V,ID=50A,VGS=0to12V Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.82 - V VGS=0V,IF=50A,Tj=25°C Reverse recovery time trr - 600 - ns VR=300V,IF=50A,diF/dt=100A/µs; see table 8 Reverse recovery charge Qrr - 17 - µC VR=300V,IF=50A,diF/dt=100A/µs; see table 8 Peak reverse recovery current Irrm - 55 - A VR=300V,IF=50A,diF/dt=100A/µs; see table 8

600VCoolMOSªSJS7APowerDevice IPDQ60T010S7 Rev.2.0,2024-03-21Final Data Sheet 4TemperatureSensorparameters atTj=25°C,unlessotherwisespecified Table8Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Repetitive Peak Reverse Voltage VRRM - - 15 V IR=100µA Sensor forward current IF - - 5 mA - Repetitive peak forward current IF_pulse - - 25 mA tpulse = 1 ms, Tperiod = 10 ms Non-repetitive peak forward current IFSM 1.5 0.2 0.1 A TC = 25°C, tpulse = 1 µs TC = 25°C, tpulse = 1 ms TC = 25°C, tpulse = 1 s Junction Temperature Tj - - 185 °C t < 50h, Sensor only Table9Electricalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Sensor forward voltage1) VF_25 1.5601 2.0665 1.6019 1.8103 1.9806 2.0966 1.6436 2.1266 V Tj = 25°C, IF = 10 µA Tj = 25°C, IF = 50 µA Tj = 25°C, IF = 200 µA Tj = 25°C, IF = 500 µA Sensor forward voltage temperature coefficient TC 5.9644 5.5880 5.2287 5.0135 mV/K 25°C ≤ Tj ≤ 175°C, IF = 10 µA 25°C ≤ Tj ≤ 175°C, IF = 50 µA 25°C ≤ Tj ≤ 175°C, IF = 200 µA 25°C ≤ Tj ≤ 175°C, IF = 500 µA Sensor forward voltage VF_175 0.6655 1.3144 0.7072 0.9721 1.1963 1.3445 0.7490 1.3746 V Tj = 175°C, IF = 10 µA Tj = 175°C, IF = 50 µA Tj = 175°C, IF = 200 µA Tj = 175°C, IF = 500 µA Reverse leakage current IR 20 µA VR = 10V, Tj = 25°C VR = 10V, Tj = 175°C Sensor G Capacitance CGTS - 4.2 - pF f = 1 MHz, IF = 50 µA Sensor Capacitance CSTS - 4.8 - pF f = 1 MHz, IF = 50 µA Anode-Drain Capacitance CDTS - 0.5 - pF f = 1 MHz, VDS = 0 V 1) Specified by Design and not tested

600VCoolMOSªSJS7APowerDevice IPDQ60T010S7 Rev.2.0,2024-03-21Final Data Sheet 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 100 200 300 400 500 600 700 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 10-3 10-2 10-1 100 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T

600VCoolMOSªSJS7APowerDevice IPDQ60T010S7 Rev.2.0,2024-03-21Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 200 400 600 800 1000 1200 20 V 12 V 10 V 8 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 100 200 300 400 500 600 700 800 20 V 12 V 10 V 8 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 100 200 300 400 500 600 700 0.018 0.020 0.022 0.024 0.026 0.028 0.030 20 V 12 V 8 V 10 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[normalized] -50 -25 100 125 150 0.5 1.0 1.5 2.0 2.5 3.0 RDS(on)=f(Tj);ID=50A;VGS=12V

600VCoolMOSªSJS7APowerDevice IPDQ60T010S7 Rev.2.0,2024-03-21Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 240 480 720 960 1200 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 135 180 225 270 315 300 V 120 V VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10-1 100 101 102 103 104 125 °C 25 °C IF=f(VSD);VGS=0V;parameter:Tj Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10-1 100 101 102 103 25 °C 125 °C IF=f(VSD);VGS=12V;parameter:Tj

600VCoolMOSªSJS7APowerDevice IPDQ60T010S7 Rev.2.0,2024-03-21Final Data Sheet Diagram13:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 100 200 300 400 500 600 700 EAS=f(Tj);ID=6.3A;VDD=50V Diagram14:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -50 -25 100 125 150 540 560 580 600 620 640 660 680 VBR(DSS)=f(Tj);ID=1mA Diagram15:Typ.capacitances VDS[V] C[pF] 100 150 200 250 300 101 102 103 104 105 106 Ciss Coss Crss C=f(VDS);VGS=0V;f=250kHz Diagram17:Typ.Qossoutputcharge VDS[V] Qoss[nC] 100 150 200 250 300 300 600 900 1200 1500 1800 Qoss=f(VDS);VGS=0V

600VCoolMOSªSJS7APowerDevice IPDQ60T010S7 Rev.2.0,2024-03-21Final Data Sheet 6TestCircuits Table10Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform VDS IF R g1 R g 2 R g1 = R g 2 Table11Switchingtimes(ss) Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table12Unclampedinductiveload(ss) Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

600VCoolMOSªSJS7APowerDevice IPDQ60T010S7 Rev.2.0,2024-03-21Final Data Sheet 7PackageOutlines DIMENSIONSMIN.MAX.MILLIMETERSPG-HDSOP-22-U01PACKAGE - GROUPNUMBER: A2bDcEeD1 AA1 1.100.89 1.1415.300.460.50 2.250.002.350.15 b10.500.90 O0°8° A30.5 Figure1OutlinePG-HDSOP-22,dimensionsinmm

600VCoolMOSªSJS7APowerDevice IPDQ60T010S7 Rev.2.0,2024-03-21Final Data Sheet 8AppendixA Table13RelatedLinks

  • IFXCoolMOSS7TWebpage:www.infineon.com
  • IFXCoolMOSS7Tapplicationnote:www.infineon.com
  • IFXCoolMOSS7Tsimulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

600VCoolMOSªSJS7APowerDevice IPDQ60T010S7 Rev.2.0,2024-03-21Final Data Sheet RevisionHistory IPDQ60T010S7 Revision:2024-03-21,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2024-03-21 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2023InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.