IPDD60R037CM8 INFINEON | Alldatasheet

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Technical content

Features

  • Suitableforhardandsoftswitchingtopologiesthankstoan outstandingcommutationruggedness
  • Significantreductionofswitchingandconductionlosses
  • BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits
  • Easeofuseandfastdesign-inthroughlowringingtendencyandusage acrossPFCandPWMstages
  • Simplifiedthermalmanagementthankstoouradvanceddieattach technique
  • Increasedpowerdensitysolutionsenabledbyusingproductswith smallerfootprintandhighermanufacturingqualityduestateoftheart ESDprotection
  • Suitableforawidevarietyofapplicationsandpowerranges Potentialapplications
  • Powersuppliesandconverters
  • PFCstages&LLCresonantconverters
  • Highefficiencyswitchingapplications
  • e.g.Server,Telecom,EVCharging,UPS Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 37 mΩ Qg,typ 79 nC ID,pulse 230 A Eoss @ 400V 10.6 µJ Body diode diF/dt 1300 A/µs ESD class (HBM) 2 - Type/OrderingCode Package Marking RelatedLinks IPDD60R037CM8 PG-HDSOP-10 60R037C8 see Appendix A

600VCoolMOSªCM8PowerTransistor IPDD60R037CM8 Rev.2.1,2024-03-21Final Data Sheet TableofContents

600VCoolMOSªCM8PowerTransistor IPDD60R037CM8 Rev.2.1,2024-03-21Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID

45 A TC=25°C

TC=100°C Pulsed drain current2) ID,pulse - - 230 A TC=25°C Avalanche energy, single pulse EAS - - 135 mJ ID=7.8A; VDD=50V; see table 10 Avalanche energy, repetitive EAR - - 0.68 mJ ID=7.8A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 7.8 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 416 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Extended operating junction temperature Tj 150 - 175 °C ≤50 h in the application lifetime Mounting torque - - - - Ncm - Continuous diode forward current IS - - 72 A TC=25°C Diode pulse current2) IS,pulse - - 230 A TC=25°C Reverse diode dv/dt3) dv/dt - - 70 V/ns VDS=0...400V,ISD≤72A,Tj=25°C see table 8 Maximum diode commutation speed diF/dt - - 1300 A/µs VDS=0...400V,ISD≤72A,Tj=25°C see table 8 Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min 1) Limited by Tj,max. 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG

600VCoolMOSªCM8PowerTransistor IPDD60R037CM8 Rev.2.1,2024-03-21Final Data Sheet 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 0.3 K/W - Thermal resistance, junction - ambient RthJA - - 62 K/W device on PCB, minimal footprint Thermal resistance, junction - ambient for SMD version RthJA - 55 60 K/W Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area. Tap exposed to air. PCB is vertical without air stream cooling. Soldering temperature, reflow soldering allowed Tsold - - 260 °C reflow MSL1

600VCoolMOSªCM8PowerTransistor IPDD60R037CM8 Rev.2.1,2024-03-21Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 3.7 4.2 4.7 V VDS=VGS,ID=0.68mA Zero gate voltage drain current IDSS 88.9 - µA VDS=600V,VGS=0V,Tj=25°C VDS=600V,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 0.1 µA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.031 0.068 0.037 - Ω VGS=10V,ID=27.0A,Tj=25°C VGS=10V,ID=27.0A,Tj=150°C Gate resistance RG - 1 - Ω f=1MHz Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 3458 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 43 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 133 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 1371 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 20.6 - ns VDD=400V,VGS=13V,ID=13.5A, RG=5.3Ω ;seetable9 Rise time tr - 7.6 - ns VDD=400V,VGS=13V,ID=13.5A, RG=5.3Ω ;seetable9 Turn-off delay time td(off) - 101.6 - ns VDD=400V,VGS=13V,ID=13.5A, RG=5.3Ω ;seetable9 Fall time tf - 5.8 - ns VDD=400V,VGS=13V,ID=13.5A, RG=5.3Ω ;seetable9 Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 21 - nC VDD=400V,ID=13.5A,VGS=0to10V Gate to drain charge Qgd - 28 - nC VDD=400V,ID=13.5A,VGS=0to10V Gate charge total Qg - 79 - nC VDD=400V,ID=13.5A,VGS=0to10V Gate plateau voltage Vplateau - 5.9 - V VDD=400V,ID=13.5A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

600VCoolMOSªCM8PowerTransistor IPDD60R037CM8 Rev.2.1,2024-03-21Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=13.5A,Tj=25°C Reverse recovery time trr - 120 150 ns VR=400V,IF=13.5A,diF/dt=100A/µs; see table 8 Reverse recovery charge Qrr - 0.73 1.10 µC VR=400V,IF=13.5A,diF/dt=100A/µs; see table 8 Peak reverse recovery current Irrm - 11.8 - A VR=400V,IF=13.5A,diF/dt=100A/µs; see table 8

600VCoolMOSªCM8PowerTransistor IPDD60R037CM8 Rev.2.1,2024-03-21Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 100 200 300 400 500 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms DC 10 ms ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 103 1 µs 100 µs 10 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[°C/W] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 0.2 0.5 0.02 0.1 0.01 single pulse 0.05 ZthJC=f(tP);parameter:D=tp/T

600VCoolMOSªCM8PowerTransistor IPDD60R037CM8 Rev.2.1,2024-03-21Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 100 200 300 400 20 V 10 V 8 V 7 V 6 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 100 150 200 250 20 V 10 V 8 V 7 V 6 V 5.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 100 150 200 250 0.050 0.065 0.080 0.095 0.110 10 V 20 V 7 V 6.5 V 6 V 5.5 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[normalized] -50 -25 100 125 150 0.5 1.0 1.5 2.0 2.5 RDS(on)=f(Tj);ID=27.0A;VGS=10V

600VCoolMOSªCM8PowerTransistor IPDD60R037CM8 Rev.2.1,2024-03-21Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 100 150 200 250 300 350 400 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 100 120 V 400 V VGS=f(Qgate);ID=13.5Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10-1 100 101 102 125 °C 25 °C IF=f(VSD);parameter:Tj Diagram12:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 100 125 150 EAS=f(Tj);ID=7.8A;VDD=50V

600VCoolMOSªCM8PowerTransistor IPDD60R037CM8 Rev.2.1,2024-03-21Final Data Sheet Diagram13:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -50 -25 100 125 150 540 570 600 630 660 690 VBR(DSS)=f(Tj);ID=1mA Diagram14:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 100 101 102 103 104 105 Ciss Coss Crss C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 Eoss=f(VDS)

600VCoolMOSªCM8PowerTransistor IPDD60R037CM8 Rev.2.1,2024-03-21Final Data Sheet 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform VDS IF R g1 R g 2 R g1 = R g 2 Table9Switchingtimes(ss) Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload(ss) Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

600VCoolMOSªCM8PowerTransistor IPDD60R037CM8 Rev.2.1,2024-03-21Final Data Sheet 6PackageOutlines DIMENSIONSMIN.MAX.MILLIMETERSPG-HDSOP-10-U01PACKAGE - GROUPNUMBER: A2bDcEeD1 AA1 1.100.89 1.1415.200.460.50 2.200.002.350.15 b10.570.93 O0°8° A30.5 Figure1OutlinePG-HDSOP-10,dimensionsinmm

600VCoolMOSªCM8PowerTransistor IPDD60R037CM8 Rev.2.1,2024-03-21Final Data Sheet 7AppendixA Table11RelatedLinks

  • IFXCoolMOSCM8Webpage:www.infineon.com
  • IFXCoolMOSCM8applicationnote:www.infineon.com
  • IFXCoolMOSCM8simulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

600VCoolMOSªCM8PowerTransistor IPDD60R037CM8 Rev.2.1,2024-03-21Final Data Sheet RevisionHistory IPDD60R037CM8 Revision:2024-03-21,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2023-10-25 Release of final version 2.1 2024-03-21 UpdateofRthJC Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2023InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.