IPD90R1K2C3_V01 INFINEON | Alldatasheet

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Features

• Lowest figure-of-merit RON x Qg • Extreme dv/dt rated CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forward topologies • PC Silverbox and consumer applications • Industrial SMPS Maximum ratings, at TJ=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current ID TC=25 °C A TC=100 °C Pulsed drain current 2) ID,pulse TC=25 °C Avalanche energy, single pulse EAS ID=0.92 A, VDD=50 V 68 mJ Avalanche energy, repetitive tAR 2),3) EAR ID=0.92 A, VDD=50 V Avalanche current, repetitive tAR 2),3) IAR A MOSFET dv /dt ruggedness d v /dt VDS=0...400 V V/ns Gate source voltage VGS static V AC (f>1 Hz) Power dissipation Ptot TC=25 °C W Operating and storage temperature TJ, Tstg °C ±30 -55 ... 150 0.31 0.92 ±20 Value 5.1 3.2 • High peak current capability • Fully qualified according to JEDEC for Industrial Applications • Pb-free lead plating; RoHS compliant,available in Halogen free mold compounda) • Ultra low gate charge VDS @ TJ=25°C 900 V RDS(on),max @TJ=25°C 1.2 Ω Qg,typ 28 nC Product Summary Type Package Marking IPD90R1K2C3 PG-TO252 9R1K2C PG-TO252 page 1 2020-05-12 Rev. 2.1 a) non-Halogen free (OPN: IPD90R1K2C3BT); Halogen free (OPN: IPD90R1K2C3AT)

Maximum ratings, at TJ =25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous diode forward current IS A Diode pulse current 2) IS,pulse 11 Reverse diode dv/dt 4) dv/dt 4 V/ns Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case RthJC - - 1.5 K/W RthJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads Tsold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C Electrical characteristics, at TJ=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=250 µA 900 - - V Gate threshold voltage VGS(th) VDS=VGS, ID=0.31 mA 2.5 3 3.5 Zero gate voltage drain current IDSS VDS=900 V, VGS=0 V, Tj=25 °C --1 µA VDS=900 V, VGS=0 V, Tj=150 °C -1 0- Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10 V, ID=2.8 A, Tj=25 °C - 0.94 1.2 Ω VGS=10 V, ID=2.8 A, Tj=150 °C - 2.5 - Gate resistance RG f=1 MHz, open drain - 1.3 - Ω Value TC=25 °C 2.8 Values Thermal resistance, junction - ambient page 2 2020-05-12 Rev. 2.1

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance Ciss - 710 - pF Output capacitance Coss -3 5- Effective output capacitance, energy related 5) Co(er) -2 3- Effective output capacitance, time related 6) Co(tr) -8 6- Turn-on delay time td(on) -7 0- n s Rise time tr -2 0- Turn-off delay time td(off) - 400 - Fall time tf -4 0- Gate Charge Characteristics Gate to source charge Qgs - 3.2 - nC Gate to drain charge Qgd -1 2- Gate charge total Qg - 28 tbd Gate plateau voltage Vplateau - 4.6 - V Reverse Diode Diode forward voltage VSD VGS=0 V, IF=2.8 A, Tj=25 °C - 0.8 1.2 V Reverse recovery time trr - 310 - ns Reverse recovery charge Qrr - 3.7 - µC Peak reverse recovery current Irrm -1 9- A VR=400 V, IF=IS, diF/dt=100 A/µs Values VGS=0 V, VDS=100 V, f=1 MHz VDD=400 V, VGS=10 V, ID=2.8 A, RG=81.3 Ω VDD=400 V, ID=2.8 A, VGS=0 to 10 V VGS=0 V, VDS=0 V to 500 V 2) Pulse width t p limited by T J,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) ISD≤ID, di/dt≤200A/µs, VDClink=400V, Vpeak<V(BR)DSS, TJ<TJ,max, identical low side and high side switch 5) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 50% VDSS. 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 50% V DSS. page 3 2020-05-12 Rev. 2.1

1 Power dissipation 2 Safe operating area

Ptot=f(TC) ID=f(VDS); TC=25 °C; D=0 parameter: tp 3 Max. transient thermal impedance 4 Typ. output characteristics ZthJC=f(tP) ID=f(VDS); TJ=25 °C parameter: D=tp/T parameter: VGS 0 25 50 75 100 125 150 T C [°C] P tot [W] 1 µs10 µs100 µs 1 ms 10 msDC 102 101 100 10-1 1 10 100 1000 V DS [V] I D [A] single pulse 0.010.02 0.05 0.1 0.2 0.5 10-110-210-310-410-5 101 100 10-1 10-2 t p [s] Z thJC [K/W] 4 V 4.5 V 5 V 5.5 V 6 V 8 V 10 V 20 V 0 5 10 15 20 25 V DS [V] I D [A] limited by on-state resistance single pulse 0.010.02 0.05 0.1 0.2 0.5 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 101 t p [s] Z thJC [K/W] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-110-210-310-410-5 101 100 10-1 10-2 t p [s] Z thJC [K/W] page 4 2020-05-12 Rev. 2.1

5 Typ. output characteristics 6 Typ. drain-source on-state resistance ID=f(VDS); TJ=150 °C RDS(on)=f(ID); TJ=150 °C parameter: VGS parameter: VGS 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on)=f(TJ); ID=2.8 A; VGS=10 V ID=f(VGS); VDS=20V parameter: TJ typ 98 % 0.5 1.5 2.5 3.5 -60 -20 20 60 100 140 180 T j [°C] R DS(on) [Ω ] 25 °C 150 °C 02468 1 0 V GS [V] I D [A] 4 V 4.5 V 5 V

5.5 V6 V

V DS [V] I D [A] 4 V 4.5 V 4.8 V 5 V 10 V 02468 1 0 I D [A] R DS(on) [Ω ] page 5 2020-05-12 Rev. 2.1

9 Typ. gate charge 10 Forward characteristics of reverse diode VGS=f(Qgate); ID=2.8 A pulsed IF=f(VSD) parameter: VDD parameter: TJ

11 Avalanche energy 12 Drain-source breakdown voltage

EAS=f(Tj); ID=0.92 A; VDD=50 V VBR(DSS)=f(Tj); ID=0.25 mA 25 °C 150 °C 25 °C, 98% 150 °C, 98% 102 101 100 10-1 0 0.5 1 1.5 2 V SD [V] I F [A] 400 V 720 V 01 0 2 0 3 0 Q gate [nC] V GS [V] 800 850 900 950 1000 1050 -60 -20 20 60 100 140 180 T J [°C] V BR(DSS) [V] 25 50 75 100 125 150 T J [°C] E AS [mJ] page 6 2020-05-12 Rev. 2.1

13 Typ. capacitances 14 Typ. C oss stored energy C=f(VDS); VGS=0 V; f=1 MHz Eoss=f(VDS) 0 100 200 300 400 500 600 V DS [V] E oss [µJ] Ciss Coss Crss 100 1000 10000 0 100 200 300 400 500 600 V DS [V] C [pF] page 7 2020-05-12 Rev. 2.1

Definition of diode switching characteristics page 8 2020-05-12 Rev. 2.1

page 9 2020-05-12 Rev. 2.1 REVISION 01.04.2020 ISSUE DATE EUROPEAN PROJECTION SCALE: 2mm DOCUMENT NO. Z8B00003328 MILLIMETERS 4.57 2.29 D N H e E 1.18 0.51 0.89 5.02 9.40 6.35 4.32 5.97 A DIMENSION c b 4,95 MIN. 2.16 0.64 0.46 0.65 0.40 0.00 1.78 1.02 5.50 5.84 6.22 6.73 1.27 10.48 5.50 MAX. 2.41 0.15 1.15 0.61 0.89 0.98 L 10:1

900VCoolMOSªC3PowerTransistor IPD90R1K2C3 Rev.2.1,2020-05-26 RevisionHistory IPD90R1K2C3 Revision:2020-05-26,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2020-05-26 Update package outline Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.