IPD900P06NM INFINEON | Alldatasheet

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Technical content

Features

  • P-Channel
  • Verylowon-resistanceRDS(on)
  • 100%avalanchetested
  • NormalLevel
  • Enhancementmode
  • Pb-freeleadplating;RoHScompliant
  • Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS -60 V RDS(on),max 90 mΩ ID -16.4 A Type/OrderingCode Package Marking RelatedLinks IPD900P06NM PG-TO 252-3 900P06NM -

OptiMOSTMPowerTransistor,-60V IPD900P06NM Rev.2.0,2019-04-03Final Data Sheet TableofContents

OptiMOSTMPowerTransistor,-60V IPD900P06NM Rev.2.0,2019-04-03Final Data Sheet 1Maximumratings atTC=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID -16.4 -12.7 A VGS=-10V,TC=25°C VGS=-10V,TC=100°C Pulsed drain current1) ID,pulse - - -65.6 A TC=25°C Avalanche energy, single pulse2) EAS - - 209 mJ ID=-16.4A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 63 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case, bottom RthJC - - 2.4 °C/W - Device on PCB, 6 cm² cooling area3) RthJA - - 75 °C/W - 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS -60 - - V VGS=0V,ID=-250µA Gate threshold voltage VGS(th) -2.1 -3 -4 V VDS=VGS,ID=-710µA Zero gate voltage drain current IDSS -0.1 -10 -100 µA VDS=-60V,VGS=0V,Tj=25°C VDS=-60V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - -10 -100 nA VGS=-20V,VDS=0V Drain-source on-state resistance RDS(on) - 75 90 mΩ VGS=-10V,ID=-16.4A Gate resistance RG - 5 - Ω - Transconductance gfs - 15 - S |VDS|≥2|ID|RDS(on)max,ID=-16.4A 1) See Diagram 3 for more detailed information 2) See Diagram 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.

OptiMOSTMPowerTransistor,-60V IPD900P06NM Rev.2.0,2019-04-03Final Data Sheet Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 1100 - pF VGS=0V,VDS=-30V,f=1MHz Output capacitance Coss - 160 - pF VGS=0V,VDS=-30V,f=1MHz Reverse transfer capacitance Crss - 39 - pF VGS=0V,VDS=-30V,f=1MHz Turn-on delay time td(on) - 9 - ns VDD=-30V,VGS=-10V,ID=-8.2A, RG,ext=1.6Ω Rise time tr - 12 - ns VDD=-30V,VGS=-10V,ID=-8.2A, RG,ext=1.6Ω Turn-off delay time td(off) - 25 - ns VDD=-30V,VGS=-10V,ID=-8.2A, RG,ext=1.6Ω Fall time tf - 9 - ns VDD=-30V,VGS=-10V,ID=-8.2A, RG,ext=1.6Ω Table6Gatechargecharacteristics1) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - -6 - nC VDD=-30V,ID=-16.4A, VGS=0to-10V Gate charge at threshold Qg(th) - -3 - nC VDD=-30V,ID=-16.4A, VGS=0to-10V Gate to drain charge Qgd - -11 - nC VDD=-30V,ID=-16.4A, VGS=0to-10V Switching charge Qsw - -13 - nC VDD=-30V,ID=-16.4A, VGS=0to-10V Gate charge total Qg - -27 - nC VDD=-30V,ID=-16.4A, VGS=0to-10V Gate plateau voltage Vplateau - -5.6 - V VDD=-30V,ID=-16.4A, VGS=0to-10V Output charge Qoss - -12 - nC VDD=-30V,VGS=0V Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - -16 A TC=25°C Diode pulse current IS,pulse - - -65.6 A TC=25°C Diode forward voltage VSD - -0.9 -1.2 V VGS=0V,IF=-16.4A,Tj=25°C Reverse recovery time trr - 50 - ns VR=-30V,IF=-16.4A, diF/dt=-100A/µs Reverse recovery charge Qrr - -116 - nC VR=-30V,IF=-16.4A, diF/dt=-100A/µs 1) See diagram ,Gate charge waveforms, for gate charge parameter definition

OptiMOSTMPowerTransistor,-60V IPD900P06NM Rev.2.0,2019-04-03Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 175 200 Ptot=f(TC) Diagram2:Draincurrent TC[°C] -ID[A] 100 125 150 175 200 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 ID=f(TC);|VGS|≥10V Diagram3:Safeoperatingarea -VDS[V] -ID[A] 10-1 100 101 102 10-1 100 101 102 1 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJA[K/W] 10-5 10-4 10-3 10-2 10-1 100 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tp);parameter:D=tp/T

OptiMOSTMPowerTransistor,-60V IPD900P06NM Rev.2.0,2019-04-03Final Data Sheet Diagram5:Typ.outputcharacteristics -VDS[V] -ID[A] -10 V -8 V -7 V -6 V -5 V -4.5 V ID=f(VDS),Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance -ID[A] RDS(on)[mΩ ] 100 125 150 175 200 -4.5 V -5 V -6 V -7 V -8 V -10 V RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics -VGS[V] -ID[A] 175 °C 25 °C ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.drain-sourceonresistance -VGS[V] RDS(on)[mΩ ] 120 160 200 240 175 °C 25 °C RDS(on)=f(VGS),ID=-16.4A;parameter:Tj

OptiMOSTMPowerTransistor,-60V IPD900P06NM Rev.2.0,2019-04-03Final Data Sheet Diagram9:Normalizeddrain-sourceonresistance Tj[°C] RDS(on)(normalizedto25°C) -80 -40 120 160 200 0.0 0.4 0.8 1.2 1.6 2.0 2.4 RDS(on)=f(Tj),ID=-22A,VGS=-10V Diagram10:Typ.gatethresholdvoltage Tj[°C] -VGS(th)[V] -80 -40 120 160 200 2.0 2.5 3.0 3.5 -7100 µA -710 µA VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances -VDS[V] C[pF] 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode -VSD[V] -IF[A] 0.00 0.25 0.50 0.75 1.00 1.25 1.50 10-1 100 101 102 25 °C 25 °C, max 175 °C 175 °C, max IF=f(VSD);parameter:Tj

OptiMOSTMPowerTransistor,-60V IPD900P06NM Rev.2.0,2019-04-03Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] -IAV[A] 100 101 102 103 10-1 100 101 102 25 °C 100 °C 150 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj,start Diagram14:Typ.gatecharge -Qgate[nC] -VGS[V] -12 V -30 V -48 V VGS=f(Qgate),ID=-16.4Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] -VBR(DSS)[V] -80 -40 120 160 200 VBR(DSS)=f(Tj);ID=-250µA Diagram Gate charge waveforms

OptiMOSTMPowerTransistor,-60V IPD900P06NM Rev.2.0,2019-04-03Final Data Sheet 5PackageOutlines 2.5 REVISION0605-02-2016ISSUE DATE EUROPEAN PROJECTION0SCALE 5mm 02.5 DOCUMENT NO.Z8B00003328MILLIMETERS 4.57 (BSC)2.29 (BSC) D NHE1e1eED1 L31.180.510.89 5.02 9.40 6.354.325.97 b3ADIMb2cbc2 A14,95 0.00 0.0460.0200.035 0.1980.2500.1850.235 0.3701.781.02 5.215.846.226.73 0.205 0.040 0.2300.265 0.050 0.245 0.413 0.0005.50 INCHESMIN 0.217 L Figure1OutlinePG-TO252-3,dimensionsinmm/inches

OptiMOSTMPowerTransistor,-60V IPD900P06NM Rev.2.0,2019-04-03Final Data Sheet RevisionHistory IPD900P06NM Revision:2019-04-03,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2019-04-03 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2019InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.