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Technical content

Features

  • New revolutionary high voltage technology
  • Extreme dv/dt rated
  • High peak current capability
  • Qualified according to AEC Q101
  • Green package (RoHS compliant), Pb-free lead plating, halogen free for mold compound
  • Ultra low gate charge
  • Ultra low effective capacitances CoolMOSTM 800V designed for:
  • Automotive application with high DC bulk voltage
  • Switching Application ( i.e. active clamp forward ) Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C A T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=1 A, V DD=50 V 90 mJ Avalanche energy, repetitive t AR 2),3) E AR I D=2 A, V DD=50 V Avalanche current, repetitive t AR 2),3) I AR A MOSFET dv /dt ruggedness dv /dt V DS=0…640 V V/ns Gate source voltage V GS static V AC (f >1 Hz) Power dissipation P tot T C=25 °C W Operating, Storage temperature Tj,Tstg °C Value 1.2 ±30 -40 ... 150 0.05 ±20 VDS 800 V RDS(on)max @ Tj = 25°C 2.7 W Qg,typ 12 nC Product Summary Type Package Marking IPD80R2k7C3A PG-TO252-3 80C2k7A PG-TO252-3 Final Data Sheet, Rev. 1.1 page 1 2013-11-21

Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous diode forward current I S A Diode pulse current2) I S,pulse 6 Reverse diode dv /dt 4) dv /dt 4 V/ns Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 3 K/W R thJA SMD version, device on PCB, minimal footprint - - 62 SMD version, device on PCB, 6 cm2 cooling area5) - 35 - Soldering temperature, reflow soldering T sold reflow MSL1 - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage1) V (BR)DSS V GS=0 V, I D=250 µA 800 - - V Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=2 A - 870 - Gate threshold voltage V GS(th) V DS=V GS, I D=0.12 mA 2.1 3 3.9 Zero gate voltage drain current I DSS V DS=800 V, V GS=0 V, T j=25 °C - - 5 µA V DS=800 V, V GS=0 V, T j=150 °C - 25 - Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=1.2 A, T j=25 °C - 2.4 2.7 W V GS=10 V, I D=1.2 A, T j=150 °C - 5.5 - Gate resistance R G f =1 MHz, open drain - 1.2 - W Thermal resistance, junction - ambient Value T C=25 °C Values Final Data Sheet, Rev. 1.1 page 2 2013-11-21

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 290 - pF Output capacitance C oss - 13 - Effective output capacitance, energy related6) C o(er) - 11 - Effective output capacitance, time related7) C o(tr) - 26 - Turn-on delay time t d(on) - 25 - ns Rise time t r - 15 - Turn-off delay time t d(off) - 72 - Fall time t f - 18 - Gate Charge Characteristics Gate to source charge Q gs - 1.5 - nC Gate to drain charge Q gd - 6 - Gate charge total Q g - 12 16 Gate plateau voltage V plateau - 5.5 - V Reverse Diode Diode forward voltage V SD V GS=0 V, I F=I S=2 A, T j=25 °C - 1 1.2 V Reverse recovery time t rr - 520 - ns Reverse recovery charge Q rr - 2 - µC Peak reverse recovery current I rrm - 6 - A 6) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 7) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. 5) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air V R=400 V, I F=I S=2 A, di F/dt =100 A/µs 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) ISD≤ID, di/dt≤400A/µs, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch 2) Pulse width t p limited by T j,max 1) For applications with applied blocking voltage > 65% of the specified blocking voltage, we recommend to evaluate the impact of the cosmic radiation effect in early design phase. For assessment please contact local Infineon sales office. Values V GS=0 V, V DS=100 V, f =1 MHz V DD=400 V, V GS=0/10 V, I D=2 A, R G,ext=47 Ω, T j=25 °C V DD=640 V, I D=2 A, V GS=0 to 10 V V GS=0 V, V DS=0 V to 480 V Final Data Sheet, Rev. 1.1 page 3 2013-11-21

1 Power dissipation 2 Safe operating area 1)

P tot=f(T C) I D=f(V DS); T C=25 °C; D =0, Parameter: tp 1) DC curve indicates operation at thermal equilibrated state, not guaranteed over lifetime. 3 Max. transient thermal impedance 4 Typ. output characteristics ZthJC=f(tP) I D=f(V DS); T j=25 °C; t p=10 µs parameter: D=t p/T parameter: V GS 0 25 50 75 100 125 150 Ptot [W] TC [°C] 1 µs 10 µs 100 µs 1 ms 5 ms DC 0.001 0.01 0.1 1 10 100 1000 ID [A] VDS [V] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-5 10-4 10-3 10-2 10-1 10-1 100 101 ZthJC [K/W] tp [s] 5 V 5.5 V 6 V 6.5 V 10 V 20 V 0 5 10 15 20 25 ID [A] VDS [V] limited by on-state resistance Final Data Sheet, Rev. 1.1 page 4 2013-11-21

5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C; t p=10 µs R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=1.2 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max; t p=10 µs parameter: T j typ 98 % 0.8 1.6 2.4 3.2 4.8 5.6 -60 -20 20 60 100 140 180 RDS(on) [W] Tj [°C] 25 °C 150 °C 0 2 4 6 8 10 ID [A] VGS [V]

6 V 10 V

4.5 V 5 V 5.5 V 0.5 1.5 2.5 0 5 10 15 20 25 ID [A] VDS [V] 4 V 4.5 V 5 V 5.5 V 6 V 10 V 20 V 5.4 5.8 6.2 6.6 7.4 7.8 8.2 8.6 0 1 2 3 4 5 6 RDS(on) [W] ID [A] Final Data Sheet, Rev. 1.1 page 5 2013-11-21

9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=2 A pulsed I F=f(V SD); t p=10 µs parameter: V DD parameter: T j

11 Avalanche energy 12 Drain-source breakdown voltage

E AS=f(T j); I D=1 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA 25 °C 150 °C 150°C (98%) 25°C (98°C) 10-1 100 101 102 0 0.5 1 1.5 2 IF [A] VSD [V] 160 V 640 V 0 2 4 6 8 10 12 14 VGS [V] Qgate [nC] 680 720 760 800 840 880 920 960 -60 -20 20 60 100 140 180 VBR(DSS) [V] Tj [°C] 25 50 75 100 125 150 EAS [mJ] Tj [°C] absolut Final Data Sheet, Rev. 1.1 page 6 2013-11-21

13 Typ. capacitances 14 Typ. Coss stored energy C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS) 0.5 1.5 2.5 0 100 200 300 400 500 600 700 800 Eoss [µJ] VDS [V] Ciss Coss Crss 100 101 102 103 0 100 200 300 400 500 C [pF] VDS [V] Final Data Sheet, Rev. 1.1 page 7 2013-11-21

Definition of diode switching characteristics Final Data Sheet, Rev. 1.1 page 8 2013-11-21

PG-TO252-3: Outline dimensions in mm/inches Final Data Sheet, Rev. 1.1 page 9 2013-11-21

Revision 2013-11-21, Rev. 1.1, Final Data Sheet Disclaimer ATV We listen to your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com . Edition 2011-09-30 Published by Infineon Technologies AG

81726 Munich, Germany

© 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non‑infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet, Rev. 1.1 page 10 2013-11-21