IPX80R1K0CE INFINEON | Alldatasheet

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MetalOxideSemiconductorFieldEffectTransistor CoolMOS™CE 800VCoolMOS™CEPowerTransistor IPx80R1K0CE DataSheet Rev.2.1 Final PowerManagement&Multimarket

800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE Rev.2.1,2013-07-18Final Data Sheet tab DPAK 1 2 tab

3 IPAK

CoolMOS™CEisarevolutionarytechnologyforhighvoltagepower MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance andruggednesstoallowstabledesignsathighestefficiencylevel. CoolMOS™800VCEcomeswithaselectedpackagechoiceofferingthe benefitofreducedsystemcostsandhigherpowerdensitydesigns. Features1)

  • Highvoltagetechnology
  • Extremedv/dtrated
  • Highpeakcurrentcapability
  • Lowgatecharge
  • Loweffectivecapacitances
  • QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)
  • Pb-freeleadplating;RoHScompliant;availablewithhalogenfreeand non-halogenfreemoldcompound1) Benefits
  • Increasedpowerdensitysolutionsduetosmallerpackage
  • Systemcost/sizesavingsduetoreducedcoolingrequirements
  • Highersystemreliabilityduetolowoperatingtemperatures

Applications

  • LEDLightingforretrofitapplicationsinQRFlybacktopology Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C 800 V RDS(on),max 0.95 Ω Qg,typ 31 nC ID,pulse 18 A VGS(th),typ 3 V CO(tr),typ 69 pF Type/OrderingCode Package Marking RelatedLinks IPD80R1K0CE PG-TO 252 IPU80R1K0CE PG-TO 251 8R1K0CE see Appendix A 1) Halogen free version is available with OPN: IPD80R1K0CEAT

800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE Rev.2.1,2013-07-18Final Data Sheet TableofContents

800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE Rev.2.1,2013-07-18Final Data Sheet 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current 1) ID 5.7

3.6 A TC=25°C

TC=100°C Pulsed drain current 2) ID,pulse - - 18 A TC=25°C Avalanche energy, single pulse EAS - - 230 mJ ID=1.6A;VDD=50V Avalanche energy, repetitive EAR - - 0.20 mJ ID=1.6A;VDD=50V Avalanche current, repetitive IAR - - 1.6 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...640V Gate source voltage VGS -20 -30

30 V static;

AC (f>1 Hz) Power dissipation (non FullPAK) TO-252, TO-251 Ptot - - 83 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C - Continuous diode forward current IS - - 5.7 A TC=25°C Diode pulse current2) IS,pulse - - 18 A TC=25°C Reverse diode dv/dt 3) dv/dt - - 4 V/ns VDS=0...400V,ISD≤IS,Tj=25°C Maximum diode commutation speed dif/dt - - 400 A/µs VDS=0...400V,ISD≤IS,Tj=25°C 3Thermalcharacteristics Table3ThermalcharacteristicsDPAK,IPAK Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 1.5 °C/W - Thermal resistance, junction - ambient 4) RthJA - °C/W SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6cm2 cooling area4) Soldering temperature, wave- & reflowsoldering allowed Tsold - - 260 °C reflow MSL 1 1) Limited by Tj max. 2) Pulse width tp limited by Tj,max 3)IdenticallowsideandhighsideswitchwithidenticalRG 4) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm2 copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling.

800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE Rev.2.1,2013-07-18Final Data Sheet 4Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 800 - - V VGS=0V,ID=0.25mA Gate threshold voltage V(GS)th 2.1 3 3.9 V VDS=VGS,ID=0.25mA Zero gate voltage drain current IDSS - µA VDS=800V,VGS=0V,Tj=25°C VDS=800V,VGS=0V,Tj=150°C Gate-source leakage curent IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.8 2.2 0.95 - Ω VGS=10V,ID=3.6A,Tj=25°C VGS=10V,ID=3.6A,Tj=150°C Gate resistance RG - 1.2 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 785 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 33 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related 1) Co(er) - 26 - pF VGS=0V,VDS=0...480V Effective output capacitance, time related Co(tr) - 69 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 25 - ns VDD=400V,VGS=0/10V,ID=5.7A, RG=15Ω Rise time tr - 15 - ns VDD=400V,VGS=0/10V,ID=5.7A, RG=15Ω Turn-off delay time td(off) - 72 - ns VDD=400V,VGS=0/10V,ID=5.7A, RG=15Ω Fall time tf - 8 - ns VDD=400V,VGS=10V,ID=5.7A, RG=15Ω Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 4 - nC VDD=640V,ID=5.7A,VGS=0to10V Gate to drain charge Qgd - 15 - nC VDD=640V,ID=5.7A,VGS=0to10V Gate charge total Qg - 31 - nC VDD=640V,ID=5.7A,VGS=0to10V Gate plateau voltage Vplateau - 5.5 - V VDD=640V,ID=5.7A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS

800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE Rev.2.1,2013-07-18Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 1 1.2 V VGS=0V,IF=5.7A,Tj=25°C Reverse recovery time trr - 520 - ns VR=400V,IF=5.7A,diF/dt=100A/µs Reverse recovery charge Qrr - 5 - µC VR=400V,IF=5.7A,diF/dt=100A/µs Peak reverse recovery current Irrm - 18 - A VR=400V,IF=5.7A,diF/dt=100A/µs

800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE Rev.2.1,2013-07-18Final Data Sheet 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T Diagram4:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 6.5 V 6 V 5.5 V 5 V ID=f(VDS);Tj=25°C;tp=10µs;parameter:VGS

800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE Rev.2.1,2013-07-18Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=150°C;tp=10µs;parameter:VGS Diagram6:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.5 V 5 V 5.5 V 6 V 10 V 20 V RDS(on)=f(ID);Tj=150°C;parameter:VGS Diagram7:Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -60 -20 100 140 180 0.0 0.4 0.8 1.2 1.6 2.0 2.4 98 % typ RDS(on)=f(Tj);ID=3.6A;VGS=10V Diagram8:Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;tp=10µs;parameter:Tj

800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE Rev.2.1,2013-07-18Final Data Sheet Diagram9:Typ.gatecharge Qgate[nC] VGS[V] 160 V 640 V VGS=f(Qgate);ID=5.7Apulsed;parameter:VDD Diagram10:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 10-1 100 101 102 150 °C 25 °C 25°C (98%) 150°C (98%) IF=f(VSD);tp=10µs;parameter:Tj Diagram11:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 100 150 200 250 EAS=f(Tj);ID=1.6A;VDD=50V Diagram12:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 680 720 760 800 840 880 920 960 VBR(DSS)=f(Tj);ID=0.25mA

800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE Rev.2.1,2013-07-18Final Data Sheet Diagram13:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram14:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 600 700 800 Eoss=f(VDS)

800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE Rev.2.1,2013-07-18Final Data Sheet 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform t V ,I Irrm IF VDS 10 %Irrm trr tF tS QF QS dIF / dt dIrr / dt VDS(peak) Qrr = QF +QS trr =tF +tS VDS IF VDS IF Rg1 Rg 2 Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS VD V(BR)DS ID VDS VDSID

800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE Rev.2.1,2013-07-18Final Data Sheet 7PackageOutlines Figure1OutlinePG-TO252,dimensionsinmm/inches

800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE Rev.2.1,2013-07-18Final Data Sheet Figure2OutlinePG-TO251,dimensionsinmm/inches

800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE Rev.2.1,2013-07-18Final Data Sheet 8AppendixA Table11RelatedLinks

  • IFXCoolMOSWebpage:www.infineon.com
  • IFXDesigntools:www.infineon.com

800VCoolMOS™CEPowerTransistor IPD80R1K0CE,IPU80R1K0CE Rev.2.1,2013-07-18Final Data Sheet RevisionHistory IPD80R1K0CE, IPU80R1K0CE Revision:2013-07-18,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2013-06-24 Release of final version 2.1 2013-07-18 update to halogen free mold compound WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Edition2011-08-01 Publishedby InfineonTechnologiesAG 81726München,Germany ©2011InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.