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Technical content

Features

  • ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss
  • Excellentthermalbehavior
  • IntegratedESDprotectiondiode
  • Lowswitchinglosses(Eoss)
  • Productvalidationacc.JEDECStandard Benefits
  • Costcompetitivetechnology
  • Lowertemperature
  • HighESDruggedness
  • Enablesefficiencygainsathigherswitchingfrequencies
  • Enableshighpowerdensitydesignsandsmallformfactors Potentialapplications RecommendedforFlybacktopologiesforexampleusedinChargers, Adapters,LightingApplications,etc. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C 700 V RDS(on),max 0.36 Ω Qg,typ 16.4 nC ID,pulse 34 A Eoss @ 400V 1.8 µJ V(GS)th,typ 3 V ESD class (HBM) 2 Type/OrderingCode Package Marking RelatedLinks IPD70R360P7S PG-TO 252-3 70S360P7 see Appendix A

700VCoolMOSªP7PowerTransistor IPD70R360P7S Rev.2.1,2018-02-12Final Data Sheet TableofContents

700VCoolMOSªP7PowerTransistor IPD70R360P7S Rev.2.1,2018-02-12Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 12.5

7.5 A TC = 20°C

TC = 100°C Pulsed drain current2) ID,pulse - - 34.0 A TC=25°C Application (Flyback) relevant avalanche current, single pulse3) IAS - - 4.5 A measured with standard leakage inductance of transformer of 10µH MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V Gate source voltage VGS -16 -30

30 V static;

AC (f>1 Hz) Power dissipation Ptot - - 59.5 W TC=25°C Operating and storage temperature Tj,Tstg -40 - 150 °C - Continuous diode forward current IS - - 8.5 A TC=25°C Diode pulse current2) IS,pulse - - 34.0 A TC = 25°C Reverse diode dv/dt4) dv/dt - - 1 V/ns VDS=0...400V,ISD<=IS,Tj=25°C Maximum diode commutation speed4) dif/dt - - 50 A/µs VDS=0...400V,ISD<=IS,Tj=25°C Insulation withstand voltage VISO - - n.a. V Vrms, TC=25°C, t=1min 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction RthJC - - 2.1 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W Device on PCB, minimal footprint Thermal resistance, junction - ambient for SMD version RthJA - 35 45 °C/W Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer 70µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wave- & reflow soldering allowed Tsold - - 260 °C reflow MSL3 1) Limited by Tj max. Tj = 20°C. Maximum duty cycle D=0.5 2) Pulse width tp limited by Tj,max 3) Proven during verification test. For explanation please read AN - CoolMOSTM 700V P7. 4)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG

700VCoolMOSªP7PowerTransistor IPD70R360P7S Rev.2.1,2018-02-12Final Data Sheet 3Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 700 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 2.50 3 3.50 V VDS=VGS,ID=0.15mA Zero gate voltage drain current IDSS - µA VDS=700V,VGS=0V,Tj=25°C VDS=700V,VGS=0V,Tj=150°C Gate-source leakage current incl. Zener diode IGSS - - 1 µA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.30 0.67 0.36 - Ω VGS=10V,ID=3.0A,Tj=25°C VGS=10V,ID=3.0A,Tj=150°C Gate resistance RG - 30 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 517 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 11 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 27 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 329 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 19 - ns VDD=400V,VGS=13V,ID=2.3A, RG=5.3Ω Rise time tr - 8 - ns VDD=400V,VGS=13V,ID=2.3A, RG=5.3Ω Turn-off delay time td(off) - 100 - ns VDD=400V,VGS=13V,ID=2.3A, RG=5.3Ω Fall time tf - 18 - ns VDD=400V,VGS=13V,ID=2.3A, RG=5.3Ω Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 2.3 - nC VDD=400V,ID=2.3A,VGS=0to10V Gate to drain charge Qgd - 6.0 - nC VDD=400V,ID=2.3A,VGS=0to10V Gate charge total Qg - 16.4 - nC VDD=400V,ID=2.3A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=400V,ID=2.3A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

700VCoolMOSªP7PowerTransistor IPD70R360P7S Rev.2.1,2018-02-12Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=3.8A,Tj=25°C Reverse recovery time trr - 210 - ns VR=400V,IF=2.3A,diF/dt=50A/µs Reverse recovery charge Qrr - 1.0 - µC VR=400V,IF=2.3A,diF/dt=50A/µs Peak reverse recovery current Irrm - 10 - A VR=400V,IF=2.3A,diF/dt=50A/µs

700VCoolMOSªP7PowerTransistor IPD70R360P7S Rev.2.1,2018-02-12Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T

700VCoolMOSªP7PowerTransistor IPD70R360P7S Rev.2.1,2018-02-12Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 5 V 5.5 V 6 V 6.5 V 7 V 10 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -50 -25 100 125 150 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 98% typ RDS(on)=f(Tj);ID=3.0A;VGS=10V

700VCoolMOSªP7PowerTransistor IPD70R360P7S Rev.2.1,2018-02-12Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 25 °C 150 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 400 V 120 V VGS=f(Qgate);ID=2.3Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 10-1 100 101 102 25 °C 125 °C IF=f(VSD);parameter:Tj Diagram13:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -75 -50 -25 100 125 150 175 600 620 640 660 680 700 720 740 760 780 800 820 840 VBR(DSS)=f(Tj);ID=1mA

700VCoolMOSªP7PowerTransistor IPD70R360P7S Rev.2.1,2018-02-12Final Data Sheet Diagram14:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 10-1 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 600 700 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Eoss=f(VDS)

700VCoolMOSªP7PowerTransistor IPD70R360P7S Rev.2.1,2018-02-12Final Data Sheet 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform VDS IF R g1 R g 2 R g1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

700VCoolMOSªP7PowerTransistor IPD70R360P7S Rev.2.1,2018-02-12Final Data Sheet 6PackageOutlines 2.5 REVISION0104-02-2016ISSUE DATE EUROPEAN PROJECTION0SCALE 5mm 02.5 DOCUMENT NO.Z8B00180313MILLIMETERS 4.57 (BSC)2.29 (BSC) D NHE1e1eED1 L31.380.600.90 5.25 9.40 6.404.705.98 b3ADIMb2cbc2 A15.13 0.00 0.0540.0240.035 0.2070.2520.1850.235 0.3701.701.00 5.605.406.226.73 0.220 0.039 0.2130.265 0.049 0.245 0.413 0.0005.50 INCHESMIN 0.217 L Figure1OutlinePG-TO252-3,dimensionsinmm/inches

700VCoolMOSªP7PowerTransistor IPD70R360P7S Rev.2.1,2018-02-12Final Data Sheet 7AppendixA Table11RelatedLinks

  • IFXCoolMOSªP7Webpage:www.infineon.com
  • IFXDesigntools:www.infineon.com

700VCoolMOSªP7PowerTransistor IPD70R360P7S Rev.2.1,2018-02-12Final Data Sheet RevisionHistory IPD70R360P7S Revision:2018-02-12,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-10-11 Release of final version 2.1 2018-02-12 Corrected front page text TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.