IPD70N12S3L-12 INFINEON | Alldatasheet

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Technical content

Features

  • OptiMOS™ - power MOSFET for automotive applications
  • N-channel - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green product (RoHS compliant)
  • 100% Avalanche tested Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25°C, V GS=10V 70 A T C=100°C, V GS=10V1) 48 Pulsed drain current1) I D,pulse T C=25°C 280 Avalanche energy, single pulse1) E AS I D=35A 410 mJ Avalanche current, single pulse I AS - 70 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25 °C 125 W Operating and storage temperature T j, T stg - -55 ... +175 °C Value VDS 120 V RDS(on),max 11.5 mW ID 70 A Product Summary Type Package Marking IPD70N12S3L-12 PG-TO252-3-11 QN12L12 PG-TO252-3-11 Rev. 1.0 page 1 2016-06-20

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics1) Thermal resistance, junction - case R thJC - - - 1.2 K/W SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area2) - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 120 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=83µA 1.2 1.7 2.4 Zero gate voltage drain current I DSS V DS=120V, V GS=0V, T j=25°C - 0.01 0.1 µA V DS=120V, V GS=0V, T j=125°C1) - 1 10 Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5V, I D=70A - 11.7 15.2 mW V GS=10 V, I D=70 A - 9.6 11.5 Values Rev. 1.0 page 2 2016-06-20

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics1) Input capacitance C iss - 4270 5550 pF Output capacitance C oss - 950 1235 Reverse transfer capacitance Crss - 90 135 Turn-on delay time t d(on) - 12 - ns Rise time t r - 6 - Turn-off delay time t d(off) - 35 - Fall time t f - 7 - Gate Charge Characteristics1) Gate to source charge Q gs - 15 21 nC Gate to drain charge Q gd - 11 17 Gate charge total Q g - 59 77 Gate plateau voltage V plateau - 3.5 - V Reverse Diode Diode continous forward current1) I S - - 70 A Diode pulse current1) I S,pulse - - 280 Diode forward voltage V SD V GS=0V, I F=70A, T j=25°C 0.6 1 1.2 V Reverse recovery time1) t rr V R=60V, I F=50A, di F/dt =100A/µs - 80 - ns Reverse recovery charge1) Q rr - 185 - nC 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. T C=25°C Values V GS=0V, V DS=25V, f =1MHz V DD=20V, V GS=10V, I D=70A, R G=3.5W V DD=96V, I D=70A, V GS=0 to 10V 1) Defined by design. Not subject to production test. Rev. 1.0 page 3 2016-06-20

1 Power dissipation 2 Drain current

P tot = f(T C); V GS = 10 V I D = f(T C); V GS = 10 V 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 100 1000 0.1 1 10 100 1000 ID [A] VDS [V] single pulse 0.01 0.05 0.1 0.5 10-6 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 101 ZthJC [K/W] tp [s] 100 120 140 0 50 100 150 200 Ptot [W] TC [°C] 0 50 100 150 200 ID [A] TC [°C] Rev. 1.0 page 4 2016-06-20

5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 70 A; V GS = 10 V parameter: T j -60 -20 20 60 100 140 180 RDS(on) [mW] Tj [°C] 3 V 3.5 V 4 V 4.5 V

5 V 10 V

ID [A] VDS [V] 3 V 3.5 V 4 V 4.5 V 5 V 10 V 0 20 40 60 80 100 120 140 RDS(on) [mΩ] ID [A] -55 °C 25 °C 175 °C 100 150 200 250 1 2 3 4 5 ID [A] VGS [V] Rev. 1.0 page 5 2016-06-20

9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 11 Typical forward diode characteristics 12 Typ. avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 25 °C 175 °C 100 101 102 103 IF [A] VSD [V] 85 µA 420 µA 0.5 1.5 2.5 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [°C] Ciss Coss Crss 102 103 104 0 5 10 15 20 25 30 C [pF] VDS [V] 101 25 °C 100 °C 150 °C 100 0.1 1 10 100 1000 IAV [A] tAV [µs] 25 °C 175 °C 100 101 102 103 IF [A] VSD [V] Rev. 1.0 page 6 2016-06-20

13 Typical avalanche energy 14 Typ. drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 70 A pulsed parameter: V DD V GS Q gate V gs(th) Qg(th) Qgs Qgd Qsw Qg 110 115 120 125 130 135 -55 -15 25 65 105 145 VBR(DSS) [V] Tj [°C]

24 V 96 V

VGS [V] Qgate [nC] 70 A 35 A 17.5 A 100 200 300 400 500 600 700 800 900 25 75 125 175 EAS [mJ] Tj [°C] Rev. 1.0 page 7 2016-06-20

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© Infineon Technologies AG 2016 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non‑infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2016-06-20

Revision History

Revision 1.0 Changes Final Data Sheet Date 20.06.2016 Rev. 1.0 page 9 2016-06-20