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Industrial & Multimarket Data Sheet Rev. 2.1, 2011-02-17 Final CoolMOS C6 650V CoolMOS™ C6 Power Transistor IPx65R380C6 MOSFET Metal Oxide Semiconductor Field Effect Transistor
650V CoolMOS™ C6 Power Transi stor IPD65R380C6, IPI65R380C6 IPB65R380C6, IPP65R380C6 IPA65R380C6 Final Data Sheet 2 Rev. 2.1, 2011-02-17
1 Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologie s. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Features
- Extremely low losses due to very low FOM R dson*Qg and Eoss
- Very high commutation ruggedness
- Easy to use/drive
- Qualified for industrial grade applications according to JEDEC1)
- Pb-free plating,
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silver box, Adapter, LCD & PDP TV, Lighting, Server, Telecom, UPS and Solar. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. 1) J-STD20 and JESD22 2) no PG-To252 Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 0.38 Qg,typ 39 nC ID,pulse 29 A Eoss @ 400V 2.8 µJ Body diode di/dt 500 A/µs Type / Ordering Code Package Marking Related Links IPD65R380C6 PG-TO252 IFX CoolMOS Webpage IPI65R380C6 PG-TO262 IFX Design tools IPB65R380C6 PG-TO263 65C6380 IPP65R380C6 PG-TO220 IPA65R380C6 PG-TO220 FullPAK
650V CoolMOS™ C6 Power Transistor IPx65R380C6 Table of Contents Final Data Sheet 3 Rev. 2.1, 2011-02-17 Table of Contents
650V CoolMOS™ C6 Power Transistor IPx65R380C6 Maximum ratings Final Data Sheet 4 Rev. 2.1, 2011-02-17
2 Maximum ratings
at Tj = 25 °C, unless otherwise specified. Table 2M a x i m u m r a t i n g s Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Continuous drain current1) 1) Limited by Tj,max. Maximum duty cycle D=0.75 ID - - 10.6 A TC= 25 °C
6.7 TC= 100°C
Pulsed drain current2) 2) Pulse width tp limited by Tj,max ID,pulse - - 29 A TC=25 °C Avalanche energy, single pulse EAS - - 215 mJ ID=1.8 A,VDD=50 V (see table 21) Avalanche energy, repetitive EAR - - 0.32 ID=1.8 A,VDD=50 V Avalanche current, repetitive IAR - - 1.8 A MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480 V Gate source voltage VGS -20 - 20 V static -30 30 AC (f>1 Hz) Power dissipation for TO-220, TO-252, TO-262, TO-263 Ptot - - 83 W TC=25 °C Power dissipation for TO-220 FullPAK Ptot - - 31 W TC=25 °C Operating and storage temperature Tj,Tstg -55 - 150 °C Mounting torque TO-220 - - 60 Ncm M3 and M3.5 screws Mounting torque TO-220 FullPAK 50 M2.5 screws Continuous diode forward current IS - - 9.2 A TC=25 °C Diode pulse current2) IS,pulse - - 29 A TC=25 °C Reverse diode dv/dt3) 3) Identical low side and high side switch with identical RG dv/dt - - 15 V/ns VDS=0...400 V,ISD ID, Tj=25 °C Maximum diode commutation speed3) dif/dt 500 A/µs
650V CoolMOS™ C6 Power Transistor IPx65R380C6 Thermal characteristics Final Data Sheet 5 Rev. 2.1, 2011-02-17
3 Thermal characteristics
Table 3 Thermal characteristics TO-220 & TO-262 Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Thermal resistance, junction - case RthJC -- 1 . 5 ° C / W Thermal resistance, junction - ambient RthJA - - 62 leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10 s Table 4 Thermal characteristics TO-220FullPAK Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Thermal resistance, junction - case RthJC -- 4 . 0 ° C / W Thermal resistance, junction - ambient RthJA - - 80 leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10 s Table 5 Thermal characteristics TO-263 & TO-252 Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Thermal resistance, junction - case RthJC -- 1 . 5 ° C / W Thermal resistance, junction - ambient RthJA - - 62 SMD version, device on PCB, minimal footprint
35 SMD version, device
on PCB, 6cm2 cooling area1) 1) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without air stream cooling. Soldering temperature, wave- & reflowsoldering allowed Tsold - - 260 °C reflow MSL1
650V CoolMOS™ C6 Power Transistor IPx65R380C6
Electrical characteristics
Final Data Sheet 6 Rev. 2.1, 2011-02-17
4 Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified Table 6 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 650 - - V VGS=0 V, ID=1.0 mA Gate threshold voltage VGS(th) 2.5 3 3.5 VDS=VGS, ID=0.32 mA Zero gate voltage drain current IDSS -- 1µ A VDS=600 V, VGS=0 V, Tj=25 °C -1 0 - VDS=600 V, VGS=0 V, Tj=150 °C Gate-source leakage current IGSS - - 100 nA VGS=20 V, VDS=0 V Drain-source on-state resistance RDS(on) -0 . 3 4 0 . 3 8 VGS=10 V, ID=3.2 A, Tj=25 °C Tj=150 °C Gate resistance RG -1 7 - f=1 MHz, open drain Table 7 Dynamic characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Input capacitance Ciss -7 1 0 - p F VGS=0 V, VDS=100 V, f=1 MHzOutput capacitance Coss -4 1 - Effective output capacitance, energy related1) 1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS Co(er) -3 2 - VGS=0 V, VDS=0...480 V Effective output capacitance, time related2) 2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS Co(tr) -1 4 0 - ID=constant, VGS=0 V VDS=0...480V Turn-on delay time td(on) -1 2 - n s VDD=400 V, VGS=13 V, ID=4.9A, RG=3 . 4 (see table 20) Rise time tr -1 2 - Turn-off delay time td(off) -1 1 0 - Fall time tf -1 1 -
650V CoolMOS™ C6 Power Transistor IPx65R380C6 Final Data Sheet 7 Rev. 2.1, 2011-02-17 Table 8 Gate charge characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. IGate to source charge Qgs -4- n C VDD=480 V, ID=4.9 A, VGS=0 to 10 VGate to drain charge Qgd -2 0 - Gate charge total Qg -3 9 - Gate plateau voltage Vplateau -5 . 5 - V Table 9 Reverse diode characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Diode forward voltage VSD -0 . 9 - V VGS=0 V, IF=4.9A, Tj=25 °C Reverse recovery time trr -2 8 0 - n s VR=400 V, IF=4.9 A, diF/dt=100 A/µs (see table 22) Reverse recovery charge Qrr -2 . 8 - µ C Peak reverse recovery current Irrm -1 7 - A
650V CoolMOS™ C6 Power Transistor IPx65R380C6 Electrical characteristics diagrams Final Data Sheet 8 Rev. 2.1, 2011-02-17
5 Electrical characteristics diagrams
Ptot = f(TC) Ptot = f(TC) Table 11 Max. transient thermal impedance Non FullPAK Max. transient thermal impedance FullPAK Z(thJC)=f(tp); parameter: D=tp/T Z(thJC)=f(tp); parameter: D=tp/T
650V CoolMOS™ C6 Power Transistor IPx65R380C6 Electrical characteristics diagrams Final Data Sheet 9 Rev. 2.1, 2011-02-17 Table 12 Safe operating area TC=25 °C Non FullPAK Safe operating area TC=25 °C FullPAK ID=f(VDS); TC=25 °C; VGS > 7V; D=0; parameter tp ID=f(VDS); TC=25 °C; VGS > 7V; D=0; parameter tp Table 13 Safe operating area TC=80 °C Non FullPAK Safe operating area TC=80 °C FullPAK ID=f(VDS); TC=80 °C; VGS > 7V; D=0; parameter tp ID=f(VDS); TC=80 °C; VGS > 7V; D=0; parameter tp
650V CoolMOS™ C6 Power Transistor IPx65R380C6 Electrical characteristics diagrams Final Data Sheet 10 Rev. 2.1, 2011-02-17 Table 14 Typ. output characteristics TC=25 °C Typ. output characteristics Tj=125 °C ID=f(VDS); Tj=25 °C; parameter: VGS ID=f(VDS); Tj=125 °C; parameter: VGS Table 15 Typ. drain-source on-state resistance Drain-source on-state resistance RDS(on)=f(ID); Tj=125 °C; parameter: VGS RDS(on)=f(Tj); ID=4.9 A; VGS=10 V
650V CoolMOS™ C6 Power Transistor IPx65R380C6 Electrical characteristics diagrams Final Data Sheet 11 Rev. 2.1, 2011-02-17 Table 16 Typ. transfer characteristics Typ. gate charge ID=f(VGS); VDS=20V VGS=f(Qgate), ID=4.9 A pulsed Table 17 Avalanche energy Drain-source breakdown voltage EAS=f(Tj); ID=1.8 A; VDD=50 V VBR(DSS)=f(Tj); ID=1.0 mA
650V CoolMOS™ C6 Power Transistor IPx65R380C6 Electrical characteristics diagrams Final Data Sheet 12 Rev. 2.1, 2011-02-17 Table 18 Typ. capacitances Typ. Coss stored energy C=f(VDS); VGS=0 V; f=1 MHz EOSS=f(VDS) Table 19 Forward characteristics of reverse diode IF=f(VSD); parameter: Tj
650V CoolMOS™ C6 Power Transistor IPx65R380C6 Test circuits Final Data Sheet 13 Rev. 2.1, 2011-02-17
6 Test circuits
Table 20 Switching times test circui t and waveform for inductive load Switching times test circuit for inductive load Switching time waveform Table 21 Unclamped inductive load test circuit and waveform Unclamped inductive load test circuit Unclamped inductive waveform Table 22 Test circuit and waveform for diode characteristics Test circuit for diode characteristics Diode recovery waveform VDS VGS VDS VGS td(on ) td( o f f)tr ton tf toff 10% 90% VDSID VDS VD V(BR)DS ID VDS VDS ID RG1 RG2 RG1 = RG2 Ι F dit /d trr 10% 90% Ι RRM RRMΙ t RRMΙ v SIL00088 QF v i F QS RRMV Stt F /did rr t rrtt S tF=+ =rrQQ SF+ Q
650V CoolMOS™ C6 Power Transistor IPx65R380C6 Package outlines Final Data Sheet 14 Rev. 2.1, 2011-02-17
7 Package outlines
Figure 1 Outlines TO-252, dimensions in mm/inches
650V CoolMOS™ C6 Power Transistor IPx65R380C6 Package outlines Final Data Sheet 15 Rev. 2.1, 2011-02-17 Figure 2 Outlines TO-220, dimensions in mm/inches
650V CoolMOS™ C6 Power Transistor IPx65R380C6 Package outlines Final Data Sheet 16 Rev. 2.1, 2011-02-17 Figure 3 Outlines TO-220 FullPAK, dimensions in mm/inches
650V CoolMOS™ C6 Power Transistor IPx65R380C6 Package outlines Final Data Sheet 17 Rev. 2.1, 2011-02-17 Figure 4 Outlines TO-262, dimensions in mm/inches
650V CoolMOS™ C6 Power Transistor IPx65R380C6 Package outlines Final Data Sheet 18 Rev. 2.1, 2011-02-17 Figure 5 Outlines TO-263, dimensions in mm/inches
650V CoolMOS™ C6 Power Transistor IPx65R380C6
Revision History
Final Data Sheet 19 Rev. 2.1, 2011-02-17
8 Revision History
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2011-02-17 Published by Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in th is document shall in no event be rega rded as a guarantee of conditions or characteristics. With respect to any ex amples or hints given herein, any typi cal values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or s ystem or to affect the safe ty or effectiveness of that device or system. Life support devices or systems are inte nded to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered Revision History: 2011-02-17, Rev. 2.1 Previous Revision: Revision Subjects (major ch anges since last revision)