IPD65R250E6 INFINEON | Alldatasheet
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Technical content
MetalOxideSemiconductorFieldEffectTransistor CoolMOS™E6650V 650VCoolMOS™E6PowerTransistor IPD65R250E6 DataSheet Rev.2.2 Final Industrial&Multimarket
650VCoolMOS™E6PowerTransistor IPD65R250E6 Rev.2.2,2013-07-30Final Data Sheet tab DPAK Drain Pin 2 Gate Pin 1 Source Pin 3 1Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™E6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheresultingdevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler.
Features
- ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
- Veryhighcommutationruggedness
- Easytouse/drive
- Pb-freeplating,Halogenfreemoldcompound
- QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingPWM stagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server, TelecomandUPS. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj max 700 V RDS(on),max 0.25 Ω Qg,typ 45 nC ID,pulse 46 A Eoss @ 400V 3.7 µJ Body diode di/dt 500 A/µs Type/OrderingCode Package Marking RelatedLinks IPD65R250E6 PG-TO 252 65E6250 see Appendix A
650VCoolMOS™E6PowerTransistor IPD65R250E6 Rev.2.2,2013-07-30Final Data Sheet TableofContents
650VCoolMOS™E6PowerTransistor IPD65R250E6 Rev.2.2,2013-07-30Final Data Sheet 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current 1) ID 16.1 A TC=25°C
11.3 TC=100°C
Pulsed drain current 2) ID‚pulse 46 A TC=25°C Avalanche energy, single pulse EAS 290 mJ ID=2.4A,VDD=50V Avalanche energy, repetitive EAR 0.44 mJ ID=2.4A,VDD=50V Avalanche current, repetitive IAR 2.4 A MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...400V Gate source voltage VGS -20 20 V static -30 30 AC (f > 1 Hz) Operating and storage temperature Tj‚Tstg -55 150 °C Continuous diode forward current IS 17.9 A TC=25°C Diode pulse current IS‚pulse 46 A TC=25°C Reverse diode dv/dt 3) dv/dt 15 V/ns VDS=0...400V,ISD≤ID, Tj=25°CMaximum diode commutation speed dif/dt 500 A/µs Power dissipation (non FullPAK) Ptot 208 W Tc = 25ºC 1) Limited by Tj max. Maximum duty cycle D=0.75 2) Pulse width tp limited by Tj max 3) Vpeak<V(BR)DSS, Tj<Tj max, identical low and high side switch with same Rg
650VCoolMOS™E6PowerTransistor IPD65R250E6 Rev.2.2,2013-07-30Final Data Sheet 3Thermalcharacteristics Table3ThermalcharacteristicsDPAK Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC 0.6 °C/W Thermal resistance, junction - ambient 1) RthJA 62 °C/W SMD version, device on PCB, minimal footprint
35 SMD version, device on PCB,
6cm² cooling area Soldering temperature, wave- & reflowsoldering allowed Tsold 260 °C reflow MSL 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling.
650VCoolMOS™E6PowerTransistor IPD65R250E6 Rev.2.2,2013-07-30Final Data Sheet 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 650 V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2.5 3 3.5 V VDS=VGS,ID=0.4mA Zero gate voltage drain current IDSS 1 µA VDS=650V,VGS=0V,Tj=25°C
10 VDS=650V,VGS=0V,Tj=150°C
Gate-source leakage current IGSS 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.230 0.25 Ω VGS=10V,ID=4.4A,Tj=25°C 0.590 VGS=10V,ID=4.4A,Tj=150°C Gate resistance RG 7 Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss 950 pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss 60 pF Effective output capacitance, energy related 1) Co(er) 40 pF VGS=0V,VDS=0...480V Effective output capacitance, time related Co(tr) 183 pF ID=constant,VGS=0V, VDS=0...480V Turn-on delay time td(on) 11 ns VDD=400V,VGS=13V,ID=6.6A, RG=3.4ΩRise time tr 9 ns Turn-off delay time td(off) 76 ns Fall time tf 9 ns Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs 5 nC VDD=480V,ID=6.6A, VGS=0to10VGate to drain charge Qgd 24 nC Gate charge total Qg 45 nC Gate plateau voltage Vplateau 5.5 V 1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS 2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
650VCoolMOS™E6PowerTransistor IPD65R250E6 Rev.2.2,2013-07-30Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD 0.9 V VGS=0V,IF=6.6A,Tj=25°C Reverse recovery time trr 260 ns VR=400V,IF=6.6A, diF/dt=100A/µsReverse recovery charge Qrr 2.4 µC Peak reverse recovery current Irrm 18 A
650VCoolMOS™E6PowerTransistor IPD65R250E6 Rev.2.2,2013-07-30Final Data Sheet 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 120 160 100 150 200 250 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC/ ID=f(VDS);TC=25°C;VGS>7V;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC/ ID=f(VDS);TC=80°C;VGS>7V;<D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T
650VCoolMOS™E6PowerTransistor IPD65R250E6 Rev.2.2,2013-07-30Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 5.5 V 5 V 6 V 6.5 V 7 V 10 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -60 -20 100 140 180 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 98% typ RDS(on)=f(Tj);ID=4,4A;VGS=10V
650VCoolMOS™E6PowerTransistor IPD65R250E6 Rev.2.2,2013-07-30Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);|VDS|=20V; Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 480 V 120 V VGS=f(Qgate);ID=6.6Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 10-1 100 101 102 125 °C 25 °C IF=f(VSD);parameter:Tj Diagram12:Avalancheenergy Tj[°C] EAS[mJ] 120 160 200 100 150 200 250 300 350 EAS=f(Tj);ID=2,4A;VDD=50V
650VCoolMOS™E6PowerTransistor IPD65R250E6 Rev.2.2,2013-07-30Final Data Sheet Diagram13:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 540 560 580 600 620 640 660 680 700 720 740 760 VBR(DSS)=f(Tj);ID=1mA Diagram14:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 600 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 600 Eoss=f(VDS)
650VCoolMOS™E6PowerTransistor IPD65R250E6 Rev.2.2,2013-07-30Final Data Sheet 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform t V ,I Irrm IF VDS 10 %Irrm trr tF tS QF QS dIF / dt dIrr / dt VDS(peak) Qrr = QF +QS trr =tF +tS VDS IF VDS IF Rg1 Rg 2 Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS VD V(BR)DS ID VDS VDSID
650VCoolMOS™E6PowerTransistor IPD65R250E6 Rev.2.2,2013-07-30Final Data Sheet 7PackageOutlines Figure1OutlinePG-TO252,dimensionsinmm/inches
650VCoolMOS™E6PowerTransistor IPD65R250E6 Rev.2.2,2013-07-30Final Data Sheet 8AppendixA Table11RelatedLinks
- IFXC6ProductBrief:www.infineon.com
- IFXC6Portfolio:www.infineon.com
- IFXCoolMOSWebpage:www.infineon.com
- IFXDesignTools:www.infineon.com
650VCoolMOS™E6PowerTransistor IPD65R250E6 Rev.2.2,2013-07-30Final Data Sheet RevisionHistory IPD65R250E6 Revision:2013-07-30,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2011-07-08 release of final datasheet 2.2 2013-07-30 add halogen free mold compound logo WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Edition2011-08-01 Publishedby InfineonTechnologiesAG 81726München,Germany ©2011InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.