IPD65R1K4C6 INFINEON | Alldatasheet
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Technical content
MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C6650V 650VCoolMOS™C6PowerTransistor IPD65R1K4C6 DataSheet Rev.2.0 Final Industrial&Multimarket
650VCoolMOS™C6PowerTransistor IPD65R1K4C6 Rev.2.0,2013-07-26Final Data Sheet tab DPAK Drain Pin 2 Gate Pin 1 Source Pin 3 1Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheresultingdevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler.
Features
- ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
- Veryhighcommutationruggedness
- Easytouse/drive
- Pb-freeplating,Halogenfreemoldcompound
- QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)
Applications
HardswitchingPWMstagesandresonantswitchingPWMstagesfore.g. PCSilverbox,Adapter,LCD&PDPTVandLighting. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj max 700 V RDS(on),max 1.4 Ω Qg,typ 10.5 nC ID,pulse 8.3 A Eoss @ 400V 1.15 µJ Body diode di/dt 500 A/µs Type/OrderingCode Package Marking RelatedLinks IPD65R1K4C6 PG-TO 252 65C61K4 see Appendix A
650VCoolMOS™C6PowerTransistor IPD65R1K4C6 Rev.2.0,2013-07-26Final Data Sheet TableofContents
650VCoolMOS™C6PowerTransistor IPD65R1K4C6 Rev.2.0,2013-07-26Final Data Sheet 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current 1) ID 3.2 A TC=25°C
2.0 TC=100°C
Pulsed drain current 2) ID‚pulse 8.3 A TC=25°C Avalanche energy, single pulse EAS 26 mJ ID=0.6A,VDD=50V (see table 10) Avalanche energy, repetitive EAR 0.10 mJ ID=0.6A,VDD=50V Avalanche current, repetitive IAR 0.6 A MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...480V Gate source voltage VGS -20 20 V static -30 30 AC (f > 1 Hz) Operating and storage temperature Tj‚Tstg -55 150 °C Continuous diode forward current IS 2.8 A TC=25°C Diode pulse current IS‚pulse 8.3 A TC=25°C Reverse diode dv/dt 3) dv/dt 15 V/ns VDS=0...400V,ISD≤ID, Tj=25°C (see table 8)Maximum diode commutation speed dif/dt 500 A/µs Power dissipation Ptot 28 W TC=25°C 1) Limited by Tj max. Maximum duty cycle D=0.75 2) Pulse width tp limited by Tj max 3) Identical low side and high side switch with identical RG
650VCoolMOS™C6PowerTransistor IPD65R1K4C6 Rev.2.0,2013-07-26Final Data Sheet 3Thermalcharacteristics Table3ThermalcharacteristicsDPAK Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC 4.4 °C/W Thermal resistance, junction - ambient 1) RthJA 62 °C/W leaded
35 SMD version, device on PCB,
6cm² cooling area Soldering temperature, wave- & reflowsoldering allowed Tsold 260 °C 1.6 mm (0.063 in.) from case for 10s 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling.
650VCoolMOS™C6PowerTransistor IPD65R1K4C6 Rev.2.0,2013-07-26Final Data Sheet 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 650 V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2.5 3 3.5 V VDS=VGS,ID=0.1mA Zero gate voltage drain current IDSS 1 µA VDS=650V,VGS=0V,Tj=25°C
10 VDS=650V,VGS=0V,Tj=150°C
Gate-source leakage current IGSS 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 1.260 1.4 Ω VGS=10V,ID=1.0A,Tj=25°C
3.280 VGS=10V,ID=1A,Tj=150°C
Gate resistance RG 6.5 Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss 225 pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss 18 pF Effective output capacitance, energy related 1) Co(er) 10 pF VGS=0V,VDS=0...480V Effective output capacitance, time related Co(tr) 42 pF ID=constant,VGS=0V, VDS=0...480V Turn-on delay time td(on) 7.7 ns VDD=400V,VGS=13V,ID=1.5A, RG=10.2Ω (see table 9)Rise time tr 5.9 ns Turn-off delay time td(off) 33 ns Fall time tf 18.2 ns Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs 1.3 nC VDD=480V,ID=1.5A, VGS=0to10VGate to drain charge Qgd 5.8 nC Gate charge total Qg 10.5 nC Gate plateau voltage Vplateau 5.4 V 1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS 2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
650VCoolMOS™C6PowerTransistor IPD65R1K4C6 Rev.2.0,2013-07-26Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD 0.9 V VGS=0V,IF=1.5A,Tj=25°C Reverse recovery time trr 200 ns VR=400V,IF=1.5A, diF/dt=100A/µs (see table 8)Reverse recovery charge Qrr 0.9 µC Peak reverse recovery current Irrm 8 A
650VCoolMOS™C6PowerTransistor IPD65R1K4C6 Rev.2.0,2013-07-26Final Data Sheet 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 120 160 Ptot=f(TC) Diagram2:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);VGS>7V;TC=25°C;D=0;parameter:tp Diagram4:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);VGS>7V;TC=80°C;D=0;parameter:tp
650VCoolMOS™C6PowerTransistor IPD65R1K4C6 Rev.2.0,2013-07-26Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 6 V 5.5V 5 V 6.5 V 7 V 10 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -60 -20 100 140 180 98% typ RDS(on)=f(Tj);ID=1.0A;VGS=10V
650VCoolMOS™C6PowerTransistor IPD65R1K4C6 Rev.2.0,2013-07-26Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 480 V 120 V VGS=f(Qgate);ID=1.5Apulsed;parameter:VDD Diagram11:Avalancheenergy Tj[°C] EAS[mJ] 100 150 200 EAS=f(Tj);ID=0.6A;VDD=50V Diagram12:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 550 575 600 625 650 675 700 725 750 VBR(DSS)=f(Tj);ID=1.0mA
650VCoolMOS™C6PowerTransistor IPD65R1K4C6 Rev.2.0,2013-07-26Final Data Sheet Diagram13:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 600 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram14:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 600 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 Eoss=f(VDS) Diagram15:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 10-1 100 101 125 °C 25 °C IF=f(VSD);parameter:Tj
650VCoolMOS™C6PowerTransistor IPD65R1K4C6 Rev.2.0,2013-07-26Final Data Sheet 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform t V ,I Irrm IF VDS 10 %Irrm trr tF tS QF QS dIF / dt dIrr / dt VDS(peak) Qrr = QF +QS trr =tF +tS VDS IF VDS IF Rg1 Rg 2 Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS VD V(BR)DS ID VDS VDSID
650VCoolMOS™C6PowerTransistor IPD65R1K4C6 Rev.2.0,2013-07-26Final Data Sheet 7PackageOutlines Figure1OutlinePG-TO252,dimensionsinmm/inches
650VCoolMOS™C6PowerTransistor IPD65R1K4C6 Rev.2.0,2013-07-26Final Data Sheet 8AppendixA Table11RelatedLinks
- IFXC6ProductBrief:www.infineon.com
- IFXC6Portfolio:www.infineon.com
- IFXCoolMOSWebpage:www.infineon.com
- IFXDesignTools:www.infineon.com
650VCoolMOS™C6PowerTransistor IPD65R1K4C6 Rev.2.0,2013-07-26Final Data Sheet RevisionHistory IPD65R1K4C6 Revision:2013-07-26,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2013-07-26 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Edition2011-08-01 Publishedby InfineonTechnologiesAG 81726München,Germany ©2011InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.