IPD640N06LG_08 INFINEON | Alldatasheet
Document overview
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Technical content
Features
- For fast switching converters and sync. rectification
- N-channel enhancement - logic level
- 175 °C operating temperature
- Avalanche rated
- Pb-free lead plating, RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C 18 A T C=100 °C 12 Pulsed drain current I D,pulse T C=25 °C1) 72 Avalanche energy, single pulse E AS I D=18 A, R GS=25 Ω 43 mJ Reverse diode dv /dt dv /dt I D=18 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 47 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value 1) See figure 3 V DS 60 V R DS(on),max 64 mΩ I D 18 A Product Summary Type IPD640N06L G PG-TO252-3 Type IPD640N06L G Marking 640N06L Rev. 1.4 page 1 2008-09-01
Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 3.2 K/W SMD version, device on PCB R thJA minimal footprint - - 75 6 cm2 cooling area2) -- 5 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=16 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.01 1 µA V DS=60 V, V GS=0 V, T j=125 °C - 1 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=18 A -4 7 6 4 mΩ V GS=4.5 V, I D=12 A -6 4 8 5 Gate resistance R G - 1.2 - Ω Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=18 A 9.5 19 - S 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Values Rev. 1.4 page 2 2008-09-01
Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 350 470 pF Output capacitance C oss - 94 130 Reverse transfer capacitance C rss -3 5 5 3 Turn-on delay time t d(on) -68 n s Rise time t r -2 5 3 8 Turn-off delay time t d(off) -3 2 4 8 Fall time t f -3 2 4 8 Gate Charge Characteristics3) Gate to source charge Q gs - 1.4 1.9 nC Gate charge at threshold Q g(th) - 0.5 0.7 Gate to drain charge Q gd - 3.6 5.4 Switching charge Q sw - 4.5 6.5 Gate charge total Q g -1 0 1 3 Gate plateau voltage V plateau - 4.2 - V Output charge Q oss V DD=30 V, V GS=0 V -34 Reverse Diode Diode continous forward current I S - - 18 A Diode pulse current I S,pulse -- 7 2 Diode forward voltage V SD V GS=0 V, I F=18 A, T j=25 °C - 0.99 1.3 V Reverse recovery time t rr -3 0 4 5 n s Reverse recovery charge Q rr -2 0 3 0 n C 3) See figure 16 for gate charge parameter definition V R=30 V, I F=I S, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=15 A, R G=22 Ω V DD=30 V, I D=18 A, V GS=0 to 10 V Rev. 1.4 page 3 2008-09-01
1 Power dissipation 2 Drain current
P tot=f(T C); V GS≥6 V I D=f(T C); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 10 ms DC 10210110010-1 102 101 100 10-1 V DS [V] I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10010-110-210-310-410-510-6 101 100 10-1 10-2 t p [s] Z thJC [K/W] 0 50 100 150 200 T C [°C] P tot [W] 0 50 100 150 200 T C [°C] I D [A] Rev. 1.4 page 4 2008-09-01
5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j
3.5 V 4 V
4.5 V 5 V 5.5 V 10 V 100 120 01 0 2 0 3 0 I D [A] R DS(on) [mΩ ] 25 °C 175 °C 012345 V GS [V] I D [A] 0 5 10 15 20 I D [A] g fs [S] 3 V 3.5 V 4 V 4.5 V 5 V 5.5 V 10 V 0123 V DS [V] I D [A] Rev. 1.4 page 5 2008-09-01
9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=18 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98 % 100 120 140 160 -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ ] 16 µA 160 µA 0.5 1.5 2.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] Ciss Coss Crss 100 1000 0 5 10 15 20 25 30 V DS [V] C [pF] 25 °C 175 °C 25 °C 98% 175 °C 98% 102 101 100 10-1 0123 V SD [V] I F [A] Rev. 1.4 page 6 2008-09-01
13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=18 A pulsed parameter: T j(start) parameter: V DD
15 Drain-source breakdown voltage 16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA 12V 30 V 48 V 02468 1 0 1 2 Q gate [nC] V GS [V] -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] V GS Q gate V gs(t h ) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 150 °C 100 1 10 100 1000 t AV [µs] I AV [A] Rev. 1.4 page 7 2008-09-01
PG-TO252-3: Outline Rev. 1.4 page 8 2008-09-01
Rev. 1.4 page 9 2008-09-01 IPD640N06L G