IPU60R1K0CE INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
  • Veryhighcommutationruggedness
  • Easytouse/drive
  • Pb-freeplating,Halogenfreemoldcompound
  • Qualifiedforstandardgradeapplications

Applications

PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 1000 mΩ Id. 6.8 A Qg.typ 13 nC ID,pulse 12 A Eoss@400V 1.3 µJ Type/OrderingCode Package Marking RelatedLinks IPD60R1K0CE PG-TO 252 IPU60R1K0CE PG-TO 251 60S1K0CE see Appendix A

600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE 2016-03-31Final Data Sheet TableofContents

600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE 2016-03-31Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 6.8

4.3 A TC=25°C

TC=100°C Pulsed drain current2) ID,pulse - - 12 A TC=25°C Avalanche energy, single pulse EAS - - 46 mJ ID=0.8A; VDD=50V; see table 11 Avalanche energy, repetitive EAR - - 0.13 mJ ID=0.8A; VDD=50V; see table 11 Avalanche current, repetitive IAR - - 0.8 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation TO-251, TO-252 Ptot - - 61 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Continuous diode forward current IS - - 4.8 A TC=25°C Diode pulse current2) IS,pulse - - 12 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 9 Maximum diode commutation speed dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 9 2Thermalcharacteristics Table3ThermalcharacteristicsTO-251,TO252 Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 2.06 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s 1) Limited by Tj max. Maximum duty cycle D=0.50 2) Pulse width tp limited by Tj,max 3)IdenticallowsideandhighsideswitchwithidenticalRG

600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE 2016-03-31Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=0.25mA Gate threshold voltage V(GS)th 2.5 3.0 3.5 V VDS=VGS,ID=0.13mA Zero gate voltage drain current IDSS - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.86 2.22 1.00 - Ω VGS=10V,ID=1.5A,Tj=25°C VGS=10V,ID=1.5A,Tj=150°C Gate resistance RG - 16 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 280 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 21 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 14 - pF VGS=0V,VDS=0...480V Effective output capacitance, time related2) Co(tr) - 57 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 10 - ns VDD=400V,VGS=10V,ID=1.9A, RG=12.2Ω ;seetable10 Rise time tr - 8 - ns VDD=400V,VGS=10V,ID=1.9A, RG=12.2Ω ;seetable10 Turn-off delay time td(off) - 60 - ns VDD=400V,VGS=10V,ID=1.9A, RG=12.2Ω ;seetable10 Fall time tf - 13 - ns VDD=400V,VGS=10V,ID=1.9A, RG=12.2Ω ;seetable10 Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 1.5 - nC VDD=480V,ID=1.9A,VGS=0to10V Gate to drain charge Qgd - 6.5 - nC VDD=480V,ID=1.9A,VGS=0to10V Gate charge total Qg - 13 - nC VDD=480V,ID=1.9A,VGS=0to10V Gate plateau voltage Vplateau - 5.4 - V VDD=480V,ID=1.9A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS 2)Co(tr)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS

600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE 2016-03-31Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=1.9A,Tj=25°C Reverse recovery time trr - 220 - ns VR=400V,IF=1.9A,diF/dt=100A/µs; see table 9 Reverse recovery charge Qrr - 1.5 - µC VR=400V,IF=1.9A,diF/dt=100A/µs; see table 9 Peak reverse recovery current Irrm - 12 - A VR=400V,IF=1.9A,diF/dt=100A/µs; see table 9

600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE 2016-03-31Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation(NonFullPAK) TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram2:Safeoperatingarea(NonFullPAK) VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea(NonFullPAK) VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance(NonFullPAK) tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T

600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE 2016-03-31Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 V 5.5V 6 V 6.5 V 7 V 10 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -50 -25 100 125 150 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 98% typ RDS(on)=f(Tj);ID=1.5A;VGS=10V

600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE 2016-03-31Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 120 V 480 V VGS=f(Qgate);ID=1.9Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 10-1 100 101 102 25 °C 125 °C IF=f(VSD);parameter:Tj Diagram12:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 EAS=f(Tj);ID=0.8A;VDD=50V

600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE 2016-03-31Final Data Sheet Diagram13:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -75 -50 -25 100 125 150 175 520 540 560 580 600 620 640 660 680 700 VBR(DSS)=f(Tj);ID=0.25mA Diagram14:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 Eoss=f(VDS)

600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE 2016-03-31Final Data Sheet 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform t V ,I Irrm IF VDS 10 %Irrm trr tF tS QF QS dIF / dt dIrr / dt VDS(peak) Qrr = QF +QS trr =tF +tS VDS IF VDS IF Rg1 Rg 2 Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE 2016-03-31Final Data Sheet 6PackageOutlines 2.0 ISSUE DATE EUROPEAN PROJECTION0 4mm2.0SCALE0 REVISION01-09-201505 DOCUMENT NO.Z8B00003328 *) mold flash not includedMILLIMETERS 4.57 (BSC)2.29 (BSC) D NHE1e1eED1 L31.180.510.90 5.02 9.40 6.404.705.97 b3ADIMb2cbc2 A15.00 0.00 0.0460.0200.035 0.1980.2520.1850.235 0.3701.701.00 5.605.846.226.73 0.220 0.039 0.2300.265 0.049 0.245 0.413 0.0005.50 INCHESMIN 0.217 L Figure1OutlinePG-TO252,dimensionsinmm/inches

600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE 2016-03-31Final Data Sheet MILLIMETERSA1b4b2bADIM D1EE1c2D e1e MIN 0.46 0.0350.0250.085 MAX 0.60 INCHES 0.1800.090 MIN0.0450.035MAX0.095 2.0EUROPEAN PROJECTION ISSUE DATE SCALE0 4mm 02.0 REVISION31-08-201504 DOCUMENT NO.Z8B00003330 0.85 0.0332.29 0.090L1 Figure2OutlinePG-TO251,dimensionsinmm/inches

600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE 2016-03-31Final Data Sheet 7AppendixA Table11RelatedLinks

  • IFXCoolMOSTMCEWebpage:www.infineon.com
  • IFXCoolMOSTMCEapplicationnote:www.infineon.com
  • IFXCoolMOSTMCEsimulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

600VCoolMOSªCEPowerTransistor IPD60R1K0CE,IPU60R1K0CE 2016-03-31Final Data Sheet RevisionHistory IPD60R1K0CE, IPU60R1K0CE Revision:2016-03-31 Previous Revision Date Subjects (major changes since last revision) 2014-09-25 Release of final version 2015-11-17 Updated to qualified for standard grade & updated package drawing 2016-03-31 Modified Id, Rthjc. Modified SOA, Zthjc curves TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.