IPA50R800CE INFINEON | Alldatasheet
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500V CoolMOS™ CE Power MOSFET IPP50R280CE vs. Standard MO S delta e/uniFB03ciency @ V IN =90V AC; plug&play s ce nario; R g,ex t =5/uni03A9 ; f=100kHz; V OUT =400VDC IPP50R280CE vs. Standard MO S e/uniFB03ciency @ VIN=90V AC; plug&play s ce nario; R g,ex t =5/uni03A9 ; f=100kHz; V OUT =400VDC absolute e/uniFB03ciency [% ] delta e/uniFB03ciency [% ] P OUT [W]P OUT [W] IPP50R280C E Standard MO S 0,6 0,4 0,2 0,0 -0,2 -0,4 -0,6 -0,8 -1,0 50 100 150 200 250 300 350 400 IPP50R280C E Standard MO S 40% Q g reduction
Infineon Technologies Austria AG
9500 Villach, Austria
© 2012 Infineon Technologies AG. All Rights Reserved. Visit us: www.infineon.com Order Number: B152-H9688-X-X-7600-DB2012-0003 Date: 10 / 2012 ATTEnTiOn plEASE ! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/ or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warran- ties and liabilities of any kind, including without limita- tion warranties of non-infringement of intellectual property rights of any third party. inFOrMATiOn For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). WArningS Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reason- able to assume that the health of the user or other persons may be endangered. 500V CoolMOS™ CE Power MOSFET Product Portfolio CoolMOS™ CE Simplified test circuit RDS(on) TO-220 FullPAK TO-252 DPAK TO-220 TO-247 IPAK 3000 mΩ IPD50R3k0CE* IPU50R3k0CE* 2000 mΩ IPD50R2k0CE IPU50R2k0CE 1400 mΩ IPD50R1k4CE* IPU50R1k4CE* 950 mΩ IPA50R950CE IPD50R950CE IPU50R950CE* 800 mΩ IPA50R800CE* IPD50R800CE* 650 mΩ IPA50R650CE* IPD50R650CE* 500 mΩ IPA50R500CE IPD50R500CE IPP50R500CE 380 mΩ IPA50R380CE* IPD50R380CE* IPP50R380CE* 280 mΩ IPA50R280CE IPD50R280CE IPP50R280CE IPW50R280CE 190 mΩ IPA50R190CE* IPP50R190CE* IPW50R190CE* * Samples available by Q3 / 2012 ** Samples available by Q4 / 2012 Applications Consumer Consumer, Lighting PC Silverbox PC Silverbox SSL: Solid State Lighting IPP50R500CE vs. Standard MOS hard commutation on conducting body diode; half bridge configuration High S ide MOS = Low S ide MOS, s ame R G,su m = 5/uni03A9 IF , forward current through body diode [A] VDS, max , maximum VDS due to high dlrr/dt [V] 500 490 480 470 460 450 440 430 420 410 400 0 1 2 3 4 5 6 7 IPP50R500C E Standard MOS 12V l ower drai n sourc e overshoot ISD ISD RG,ext RG,ext dIF / dt dIrr / dt VDS max VDS VDS t t 400V SW DUT Imm IF IF 145µH simplified waveform when switching ON of High Side MOSFET for 2nd time (double pulse) From IF=1 to IF=4A better behaviour observed of 500V CE IF > 4A same behaviour Body diode conduction < 2µs before turn-off