IPD50N08S4-13 INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • N-channel - Enhancement mode
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current1) I D T C=25°C, V GS=10V 50 A T C=100°C, V GS=10V2) 50 Pulsed drain current2) I D,pulse T C=25°C 200 Avalanche energy, single pulse2) E AS I D=25A 76 mJ Avalanche current, single pulse I AS - 31 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 72 W Operating and storage temperature T j, T stg - -55 ... +175 °C Value VDS 80 V RDS(on),max 13.2 mW ID 50 A Product Summary PG-TO252-3-313 Type Package Marking IPD50N08S4-13 PG-TO252-3-313 4N0813 Rev. 1.0 page 1 2014-06-30

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 2.1 K/W SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 80 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=33µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=80V, V GS=0V, T j=25°C - 0.01 1 µA V DS=80V, V GS=0V, T j=125°C2) - 5 100 Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10V, I D=50A - 11.2 13.2 mW Values Rev. 1.0 page 2 2014-06-30

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics2) Input capacitance C iss - 1316 1711 pF Output capacitance C oss - 511 664 Reverse transfer capacitance Crss - 29 58 Turn-on delay time t d(on) - 5.0 - ns Rise time t r - 3.6 - Turn-off delay time t d(off) - 6.4 - Fall time t f - 11.8 - Gate Charge Characteristics2) Gate to source charge Q gs - 6.9 9.0 nC Gate to drain charge Q gd - 4.5 9 Gate charge total Q g - 19 30 Gate plateau voltage V plateau - 5.0 - V Reverse Diode Diode continous forward current2) I S - - 50 A Diode pulse current1) I S,pulse - - 200 Diode forward voltage V SD V GS=0V, I F=50A, T j=25°C - 0.9 1.3 V Reverse recovery time1) t rr V R=50V, I F=I S, di F/dt =100A/µs - 74 - ns Reverse recovery charge1) Q rr - 49 - nC Values V GS=0V, V DS=25V, f =1MHz V DD=40V, V GS=10V, I D=50A, R G=3.5W V DD=64V, I D=50A, V GS=0 to 10V 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 1) Current is limited by bondwire; with an R thJC = 2.1K/W the chip is able to carry 85A at 25°C. T C=25°C 2) Specified by design. Not subject to production test. Rev. 1.0 page 3 2014-06-30

1 Power dissipation 2 Drain current

P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS = 10 V 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 100 1000 0.1 1 10 100 ID [A] VDS [V] single pulse 0.01 0.05 0.1 0.5 10-2 10-1 100 101 ZthJC [K/W] tp [s] 0 50 100 150 200 Ptot [W] TC [°C] 0 50 100 150 200 ID [A] TC [°C] Rev. 1.0 page 4 2014-06-30

5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 50 A; V GS = 10 V parameter: T j -60 -20 20 60 100 140 180 RDS(on) [mW] Tj [°C] 5 V 5.5 V 6 V 10 V 100 120 140 160 180 200 0 2 4 6 ID [A] VDS [V] 5 V 5.5 V 6 V 7 V 10 V 0 20 40 RDS(on) [mW] ID [A] -55 °C 25 °C 175 °C 100 120 140 160 180 200 2.5 4.5 6.5 ID [A] VGS [V] Rev. 1.0 page 5 2014-06-30

9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D

11 Typical forward diode characteristicis 12 Avalanche characteristics

IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 25 °C 175 °C 100 101 102 103 0 0.4 0.8 1.2 1.6 2 IF [A] VSD [V] 33 µA 330 µA 1.5 1.75 2.25 2.5 2.75 3.25 3.5 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [°C] Ciss Coss Crss 102 103 104 0 20 40 60 80 C [pF] VDS [V] 101 25 °C 100 °C 150 °C 100 1 10 100 1000 IAV [A] tAV [µs] Rev. 1.0 page 6 2014-06-30

13 Avalanche energy 14 Drain-source breakdown voltage

E AS = f(T j); I D = 15 A V BR(DSS) = f(T j); I D = 1 mA 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 50 A pulsed parameter: V DD V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g -55 -15 25 65 105 145 185 VBR(DSS) [V] Tj [°C] 16 V 64 V 0 3 6 9 12 15 18 VGS [V] Qgate [nC] 31 A 15 A 7.5 A 100 150 200 250 300 350 400 25 75 125 175 EAS [mJ] Tj [°C] Rev. 1.0 page 7 2014-06-30

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© Infineon Technologies AG 2014 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2014-06-30

Revision History

Revision 1.0 Changes Final data sheet Date 30.06.2014 Rev. 1.0 page 9 2014-06-30