IPD30N08S2L-21

IPD30N08S2L-21 INFINEON | Alldatasheet

Document overview

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Technical content

Features

• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C, V GS=10 V1) 30 A T C=100 °C, V GS=10 V2) 30 Pulsed drain current2) I D,pulse T C=25 °C 120 Avalanche energy, single pulse E AS I D=30A 240 mJ Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 136 W Operating and storage temperature T j, T stg -55 ... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value V DS 75 V R DS(on),max 20.5 mΩ I D 30 A Product Summary PG-TO252-3-11 Type Package Marking IPD30N08S2L-21 PG-TO252-3-11 2N08L21 Rev. 1.0 page 1 2006-07-18

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - 1.1 K/W Thermal resistance, junction - ambient, leaded R thJA - - 100 SMD version, device on PCB R thJA minimal footprint - - 75 6 cm2 cooling area3) -- 5 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 75 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=80 µA 1.2 1.6 2.0 Zero gate voltage drain current I DSS V DS=75 V, V GS=0 V, T j=25 °C - 0.01 1 µA V DS=75 V, V GS=0 V, T j=125 °C2) - 1 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=25 A - 20.6 26 mΩ Drain-source on-state resistance RDS(on) V GS=10 V, I D=25 A - 15.9 20.5 m Ω Values Rev. 1.0 page 2 2006-07-18

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics2) Input capacitance C iss - 1650 - pF Output capacitance C oss - 400 - Reverse transfer capacitance Crss - 190 - Turn-on delay time t d(on) -9- n s Rise time t r -3 0- Turn-off delay time t d(off) -4 4- Fall time t f -1 1- Gate Charge Characteristics2) Gate to source charge Q gs - 6 6.8 nC Gate to drain charge Q gd -2 2 3 2 Gate charge total Q g -5 6 7 2 Gate plateau voltage V plateau - 3.5 - V Reverse Diode Diode continous forward current2) I S - - 30 A Diode pulse current2) I S,pulse - - 120 Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 °C - 0.9 1.3 V Reverse recovery time2) t rr V R=40 V, I F=I S, di F/dt =100 A/µs -5 0- n s Reverse recovery charge2) Q rr V R=40 V, I F=I S, di F/dt =100 A/µs - 120 - nC 1) Current limited by bondwire; with an RthJC = 1.1K/W the chip is able to carry ID= 54A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos T C=25 °C Values V GS=0 V, V DS=25 V, f =1 MHz V DD=40 V, V GS=10 V, I D=30 A, R G=3.9 Ω V DD=60 V, I D=30 A, V GS=0 to 10 V 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2006-07-18

1 Power dissipation 2 Drain current

P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 10 V 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T single pulse 0.01 0.05 0.1 0.5 10010-110-210-310-410-510-610-7 100 10-1 10-2 10-3 t p [s] Z thJC [K/W] 100 120 140 160 0 50 100 150 200 T C [°C] P tot [W] 0 50 100 150 200 T C [°C] I D [A] 1 µs 10 µs 100 µs 1 ms 100 1000 0.1 1 10 100 V DS [V] I D [A] Rev. 1.0 page 4 2006-07-18

5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. Forward transconductance I D = f(V GS); V DS = 6V g fs = f(I D); T j = 25°C parameter: T j parameter: g fs 2.5 V 3 V 3.5 V 4 V 4.5 V

5 V10 V

V DS [V] I D [A] 3 V 3.5 V 4 V 4.5 V 5 V 10 V 100 120 0 20 40 60 80 100 120 I D [A] RDS(on) [mW] -55 °C 25 °C 175 °C 100 120 012345 V GS [V] I D [A] 0 2 04 06 08 0 1 0 0 I D [A] g fs [S] Rev. 1.0 page 5 2006-07-18

9 Typ. Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(ON) = f(T j) V GS(th) = f(T j); V GS = V DS parameter: I D = 25 A; VGS = 10 V parameter: I D 11 Typ. capacitances 12 Typical forward diode characteristicis C = f(V DS); V GS = 0 V; f = 1 MHz IF = f(V SD) parameter: T j 25 °C175 °C 103 102 101 100 V SD [V] I F [A] Ciss Coss Crss 104 103 102 0 5 10 15 20 25 30 V DS [V] C [pF] 80 µA 400 µA 0.5 1.5 2.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ ] Rev. 1.0 page 6 2006-07-18

13 Typical avalanche energy 14 Typ. gate charge E AS = f(T j) V GS = f(Q gate); I D = 30 A pulsed parameter: I D 15 Typ. drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS) = f(T j); I D = 1 mA 30 A 15 A 7.5 A 200 400 600 800 1000 25 75 125 175 T j [°C] E AS [mJ] V GS Qgate Q gs Qgd Q g V GS Qgate Q gs Qgd Q g

15 V 60 V

Q gate [nC] V GS [V] -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] Rev. 1.0 page 7 2006-07-18

© Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies Office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2006-07-18