IPD20N03LG INFINEON | Alldatasheet

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OptiMOS ====Buck converter series Product Summary VDS 30 V RDS(on) 20 m/G01 ID 30 A Feature /G02 N-Channel /G02 Logic Level /G02 Excellent Gate Charge x RDS(on) product (FOM) /G02/G03 175°C operating temperature /G02 dv/dt rated /G02/G03 Ideal for fast switching buck converters PG-TO252-3 Marking 20N03L Type Package IPD20N03L G PG-TO252-3 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TC=25°C TC=100°C ID A Pulsed drain current TC=25°C ID puls 120 Avalanche energy, single pulse ID=15A, VDD=25V, RGS=25/G01 EAS 15 mJ Reverse diode dv/dt IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 42 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56 /G02 Pb.free lead plating, RoHS compliant

Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 3.6 K/W Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA V(BR)DSS 30 - - V Gate threshold voltage, VGS = VDS ID=25µA VGS(th) 1.2 1.6 2 Zero gate voltage drain current VDS=30V, VGS=0V, Tj=25°C VDS=30V, VGS=0V, Tj=125°C IDSS 0.01 100 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - 1 100 nA Drain-source on-state resistance VGS=4.5V, ID=15A RDS(on) - 23.0 31 m/G01 Drain-source on-state resistance VGS=10V, ID=15A RDS(on) - 15.3 20 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS/G02 2*ID*RDS(on)max , ID=25A 14 28 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 560 695 pF Output capacitance Coss - 230 280 Reverse transfer capacitance Crss - 62 93 Gate resistance RG - 1.3 - /G01 Turn-on delay time td(on) VDD=15V, VGS=10V, ID=15A, RG=12.7/G01 - 6.2 9.3 ns Rise time tr - 31 47 Turn-off delay time td(off) - 23 34 Fall time tf - 18 27 Gate Charge Characteristics Gate to source charge Qgs VDD=15V, ID=15A - 2.5 3.1 nC Gate to drain charge Qgd - 6.4 9.6 Gate charge total Qg VDD=15V, ID=15A, VGS=0 to 5V - 15 19 Output charge Qoss VDS=15V, ID=15A, VGS=0V - 8 10 Gate plateau voltage V(plateau) VDD=15V, ID=15A - 3.6 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 30 A Inverse diode direct current, pulsed ISM - - 120 Inverse diode forward voltage VSD VGS=0V, IF=30A - 1.1 1.4 V Reverse recovery time trr VR=15V, IF=lS, diF/dt=100A/µs - 26 32 ns Reverse recovery charge Qrr - 13 16 nC

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 140 160 °C 190 TC W IPD20N03L Ptot

2 Drain current

I D = f (TC) parameter: VGS/G04 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A IPD20N03L ID

3 Safe operating area

I D = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 -1 10 0 10 1 10 2 V VDS 0 10 1 10 2 10 3 10 A IPD20N03L ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs tp = 24.0µs

4 Transient thermal impedance

Z thJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W IPD20N03L ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VDS A IPD20N03L ID VGS [V] a a 3.0 b b 3.5 c c 4.0 d d 4.5e e 5.0 f f 6.0 g g 7.0 h Ptot = 42W h 10.0 6 Typ. drain-source on resistance R DS(on) = f (ID) parameter: VGS 0 10 20 30 40 A 60 ID m/G01 IPD20N03L RDS(on) VGS [V] = c c 4.0 d d 4.5 e e 5.0 f f 6.0 g g 7.0 h h 10.0 7 Typ. transfer characteristics ID= f ( VGS ); VDS/G04 2 x ID x RDS(on)max parameter: tp = 80 µs 0 1 2 3 4 V 5.5 VGS A ID 8 Typ. forward transconductance g fs = f(ID); Tj=25°C parameter: gfs 0 5 10 15 20 A 30 ID S gfs

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 15 A, VGS = 10 V -60 -20 20 60 100 140 °C 200 Tj m/G01 IPD20N03L RDS(on) typ 98%

10 Gate threshold voltage

V GS(th) = f (Tj) parameter: VGS = VDS, ID = 25 µA -60 -20 20 60 100 °C 180 Tj 0.5 1.5 V 2.5 VGS(th) typ. max. min. 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 0 5 10 15 20 V 30 VDS 1 10 2 10 3 10 4 10 pF C Ciss Coss Crss 12 Forward character. of reverse diode I F = f (VSD) parameter: Tj , tp = 80 µs VSD 0 10 1 10 2 10 3 10 A IPD20N03L IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

13 Typ. avalanche energy EAS = f (Tj) par.: ID = 15 A, VDD = 25 V, RGS = 25 /G01 25 45 65 85 105 125 145 °C 185 Tj mJ EAS 14 Typ. gate charge V GS = f (QGate) parameter: ID = 30 A pulsed 0 4 8 12 16 nC 24 QGate V IPD20N03L VGS

0.2 VDS max

0.5 VDS max

0.8 VDS max

15 Drain-source breakdown voltage

V (BR)DSS = f (Tj) parameter: ID=10 mA -60 -20 20 60 100 140 °C 200 Tj V IPD20N03L V(BR)DSS