IPD07N03L INFINEON | Alldatasheet

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Technical content

OptiMOSâ Buck converter series Product Summary VDS 30 V RDS(on) 6.8 mΩ ID 30 A Feature

  • N-Channel
  • Logic Level
  • Low On-Resistance RDS(on)
  • Excellent Gate Charge x RDS(on) product (FOM)
  • Superior thermal resistance
  • 175°C operating temperature
  • Avalanche rated
  • dv/dt rated
  • Ideal for fast switching buck converters P- TO251 -3-1 P- TO252 -3-11 Marking 07N03L 07N03L Type Package Ordering Code IPD07N03L P- TO252 -3-11 Q67042-S4029 IPU07N03L P- TO251 -3-1 Q67042-S4105 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current1) TC=25°C ID A Pulsed drain current TC=25°C ID puls 120 Avalanche energy, single pulse ID=20A, VDD=25V, RGS=25Ω EAS 30 mJ Repetitive avalanche energy, limited by Tjmax2) EAR 15 Reverse diode dv/dt IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 150 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56

Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 0.68 1 K/W Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA V(BR)DSS 30 - - V Gate threshold voltage, VGS = VDS ID = 80 µA VGS(th) 1.2 1.6 2 Zero gate voltage drain current VDS=30V, VGS=0V, Tj=25°C VDS=30V, VGS=0V, Tj=125°C IDSS 0.01 100 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - 1 100 nA Drain-source on-state resistance VGS=4.5V, ID=30A RDS(on) - 7.7 9.9 mΩ Drain-source on-state resistance VGS=10V, ID=30A RDS(on) - 5.7 6.8 1Current limited by bondwire ; with an RthJC = 1K/W the chip is able to carry ID= 116A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

Electrical Characteristics

Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=30A 29 58 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 1900 2530 pF Output capacitance Coss - 740 990 Reverse transfer capacitance Crss - 180 270 Gate resistance RG - 2.3 - Ω Turn-on delay time td(on) VDD=15V, VGS=10V, ID=15A, RG=3.6Ω - 7.8 11.7 ns Rise time tr - 17 26 Turn-off delay time td(off) - 62 93 Fall time tf - 47 70 Gate Charge Characteristics Gate to source charge Qgs VDD=15V, ID=15A - 4.4 5.5 nC Gate to drain charge Qgd - 14.8 18.1 Gate charge total Qg VDD=15V, ID=15A, VGS=0 to 5V - 26.8 33.5 Output charge Qoss VDS=15V, ID=15A, VGS=0V - 25.5 31.9 nC Gate plateau voltage V(plateau) VDD=15V, ID=15A - 2.5 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 30 A Inv. diode direct current, pulsed ISM - - 120 Inverse diode forward voltage VSD VGS=0V, IF=30A - 0.9 1.3 V Reverse recovery time trr VR=15V, IF=lS, diF/dt=100A/µs - 41 51 ns Reverse recovery charge Qrr - 46 58 nC

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 140 160 °C 190 TC 100 120 W

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2 Drain current

ID = f (TC) parameter: VGS≥ 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A

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4 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W IPD07N03L ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 -1 10 0 10 1 10 2 V VDS 0 10 1 10 2 10 3 10 A IPD07N03L ID R DS(on) V DS / I D DC 10 ms 1 ms 100 µs tp = 14.0µs

5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VDS A IPD07N03L ID VGS [V] a a 2.6 b b 2.8 c c 3.0 d d 3.2 e e 3.4 f f 3.6 g g 3.8 h h 4.5 i Ptot = 150W i 10.0 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 0 10 20 30 40 50 A 65 ID Ω

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RDS(on) VGS [V] = d d 3.2 e e 3.4 f f 3.6 g g 3.8 h h 4.5 i i 10.0 7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 0 0.5 1 1.5 2 2.5 3 V 4 VGS A ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0 20 40 60 80 100 A 130 ID S gfs

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 30 A, VGS = 10 V -60 -20 20 60 100 140 °C 200 Tj Ω

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RDS(on) typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS -60 -20 20 60 100 °C 180 Tj 0.5 1.5 V 2.5 VGS(th) 1mA 85µA 11 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 5 10 15 20 V 30 VDS 2 10 3 10 4 10 pF C Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD 0 10 1 10 2 10 3 10 A IPD07N03L IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)

13 Typ. avalanche energy EAS = f (Tj) par.: ID = 20 A, VDD = 25 V, RGS = 25 Ω 25 45 65 85 105 125 145 °C 185 Tj mJ EAS 14 Typ. gate charge VGS = f (QGate) parameter: ID = 15 A pulsed 0 10 20 30 40 50 60 nC 75 QGate V

0.2 VDS max

0.5 VDS max

0.8 VDS max

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj) parameter: ID=10 mA -60 -20 20 60 100 140 °C 200 Tj V

36 IPD07N03L

V(BR)DSS

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