IPD040N08NF2S

IPD040N08NF2S INFINEON | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 11

Technical content

Features

• Optimizedforawiderangeofapplications
• N-Channel,normallevel
• 100%avalanchetested
• Pb-freeleadplating;RoHScompliant
• Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 4.0 mΩ ID 129 A Qoss 65 nC QG 54 nC Type/OrderingCode Package Marking RelatedLinks IPD040N08NF2S PG-TO252-3 040N08NS -

StrongIRFETTM2Power-Transistor IPD040N08NF2S Rev.2.2,2022-10-10Final Data Sheet TableofContents

StrongIRFETTM2Power-Transistor IPD040N08NF2S Rev.2.2,2022-10-10Final Data Sheet 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 129 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=6V,TC=100°C VGS=10V,TA=25°C,RthJA=50°C/W2) Pulsed drain current3) ID,pulse - - 516 A TC=25°C Avalanche energy, single pulse4) EAS - - 112 mJ ID=100A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot 150

3.0 W TC=25°C

TA=25°C,RthJA=50°C/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C - 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 1.0 °C/W - Thermal resistance, junction - ambient, 6 cm² cooling area2) RthJA - - 50 °C/W - Thermal resistance, junction - ambient, minimal footprint RthJA - - 75 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information

StrongIRFETTM2Power-Transistor IPD040N08NF2S Rev.2.2,2022-10-10Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 80 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2.2 3.0 3.8 V VDS=VGS,ID=85µA Zero gate voltage drain current IDSS 0.1 100 µA VDS=80V,VGS=0V,Tj=25°C VDS=80V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 3.4 4.4 4.0 5.7 mΩ VGS=10V,ID=70A VGS=6V,ID=35A Gate resistance RG - 1.9 - Ω - Transconductance1) gfs 60 - - S |VDS|≥2|ID|RDS(on)max,ID=70A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 3800 - pF VGS=0V,VDS=40V,f=1MHz Output capacitance Coss - 620 - pF VGS=0V,VDS=40V,f=1MHz Reverse transfer capacitance Crss - 29 - pF VGS=0V,VDS=40V,f=1MHz Turn-on delay time td(on) - 14 - ns VDD=40V,VGS=10V,ID=70A, RG,ext=1.6Ω Rise time tr - 54 - ns VDD=40V,VGS=10V,ID=70A, RG,ext=1.6Ω Turn-off delay time td(off) - 28 - ns VDD=40V,VGS=10V,ID=70A, RG,ext=1.6Ω Fall time tf - 13 - ns VDD=40V,VGS=10V,ID=70A, RG,ext=1.6Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 18.3 - nC VDD=40V,ID=70A,VGS=0to10V Gate charge at threshold Qg(th) - 11.4 - nC VDD=40V,ID=70A,VGS=0to10V Gate to drain charge Qgd - 11.8 - nC VDD=40V,ID=70A,VGS=0to10V Switching charge Qsw - 18.7 - nC VDD=40V,ID=70A,VGS=0to10V Gate charge total1) Qg - 54 81 nC VDD=40V,ID=70A,VGS=0to10V Gate plateau voltage Vplateau - 4.8 - V VDD=40V,ID=70A,VGS=0to10V Output charge Qoss - 65 - nC VDS=40V,VGS=0V 1) Defined by design. Not subject to production test. 2) See ″Gate charge waveforms″ for parameter definition

StrongIRFETTM2Power-Transistor IPD040N08NF2S Rev.2.2,2022-10-10Final Data Sheet Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - 103 A TC=25°C Diode pulse current IS,pulse - - 516 A TC=25°C Diode forward voltage VSD - 0.92 1.2 V VGS=0V,IF=70A,Tj=25°C Reverse recovery time trr - 33 - ns VR=40V,IF=70A,diF/dt=500A/µs Reverse recovery charge Qrr - 189 - nC VR=40V,IF=70A,diF/dt=500A/µs

StrongIRFETTM2Power-Transistor IPD040N08NF2S Rev.2.2,2022-10-10Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 175 100 120 140 160 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 125 150 175 100 120 140 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-6 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 101 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 ZthJC=f(tp);parameter:D=tp/T

StrongIRFETTM2Power-Transistor IPD040N08NF2S Rev.2.2,2022-10-10Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 100 200 300 400 500 600 10 V 8 V 7 V 6 V 5 V 4.5 V ID=f(VDS),Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 100 150 200 250 4.5 V 5 V 6 V 7 V 8 V 10 V RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 100 200 300 400 500 175 °C 25 °C ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.drain-sourceonresistance VGS[V] RDS(on)[mΩ ] 175 °C 25 °C RDS(on)=f(VGS),ID=70A;parameter:Tj

StrongIRFETTM2Power-Transistor IPD040N08NF2S Rev.2.2,2022-10-10Final Data Sheet Diagram9:Normalizeddrain-sourceonresistance Tj[°C] RDS(on)(normalizedto25°C) -75 -50 -25 100 125 150 175 200 0.0 0.4 0.8 1.2 1.6 2.0 RDS(on)=f(Tj),ID=70A,VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -75 -50 -25 100 125 150 175 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 850 µA 85 µA VGS(th)=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances VDS[V] C[pF] 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Typ.forwardcharacteristicsofreversediode VSD[V] IF[A] 0.00 0.25 0.50 0.75 1.00 1.25 1.50 100 101 102 103 25 °C 175 °C IF=f(VSD);parameter:Tj

StrongIRFETTM2Power-Transistor IPD040N08NF2S Rev.2.2,2022-10-10Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 10-1 100 101 102 103 10-1 100 101 102 103 25 °C 100 °C 150 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj,start Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 16 V 40 V 64 V VGS=f(Qgate),ID=70Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -75 -50 -25 100 125 150 175 200 VBR(DSS)=f(Tj);ID=1mA Diagram Gate charge waveforms

StrongIRFETTM2Power-Transistor IPD040N08NF2S Rev.2.2,2022-10-10Final Data Sheet 5PackageOutlines DIMENSIONSMIN.MAX.bDcEeD1 AA1 2.295.970.460.64 6.355.21 PG-TO252-3-U01PACKAGE - GROUPNUMBER: Figure1OutlinePG-TO252-3,dimensionsinmm

StrongIRFETTM2Power-Transistor IPD040N08NF2S Rev.2.2,2022-10-10Final Data Sheet RevisionHistory IPD040N08NF2S Revision:2022-10-10,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2022-02-08 Release of final version 2.1 2022-06-22 Update Diagram 15 2.2 2022-10-10 Update package outline drawing Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2022InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.