IPC26N10NR INFINEON | Alldatasheet
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MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™2PowerMOSTransistorChip IPC26N10NR DataSheet Rev.2.5 Final Industrial&Multimarket
OptiMOS™2PowerMOSTransistorChip IPC26N10NR Rev.2.5,2014-10-03Final Data Sheet PowerMOSTransistorChip Drain Gate Source 1Description
- N-channelenhancementmode
- FordynamiccharacterizationrefertothedatasheetofIPP05CN10NG1)
- AQL0.65forvisualinspectionaccordingtofailurecatalogue
- ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C
- Diebond:solderedorglued
- Backsidemetallization:NiVsystem
- Frontsidemetallization:AlSisystem
- Passivation:nitride(onlyonedgestructure) Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS 100 V RDS(on) 5.42) mΩ Die size 6.0 x 4.36 mm2 Thickness 250 µm Type/OrderingCode Package Marking RelatedLinks IPC26N10NR Chip not defined - 1) IPP05CN10N G dynamic characterization does not include the internal added RG 2) packaged in a P-TO220-3-1 (see ref. product)
OptiMOS™2PowerMOSTransistorChip IPC26N10NR Rev.2.5,2014-10-03Final Data Sheet 2ElectricalCharacteristicsonWaferLevel atTj=25°C,unlessotherwisespecified Table2 Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 100 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2 - 4 V VDS=VGS,ID=250µA Zero gate voltage drain current IDSS - 0.1 1 µA VGS=0V,VDS=100V Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on- resistance RDS(on) - 3.21) 1002) mΩ VGS=10V,ID=2.0A Reverse diode forward on-voltage VSD - 1.0 1.2 V VGS=0V,IF=1A Internal gate resistance RG - 1.8 - Ω - Additional gate resistor RGadd - 16 - Ω - Avalanche energy, single pulse EAS - 1253) - mJ ID =50 A, RGS =25 Ω 1)typicalbaredieRDS(on);VGS=10V 2) limited by wafer test-equipment 3) Wafer tested. For general avalanche capability refer to the datasheet of IPP05CN10N G
OptiMOS™2PowerMOSTransistorChip IPC26N10NR Rev.2.5,2014-10-03Final Data Sheet 3PackageOutlines Figure1OutlineChip,dimensionsinµm
OptiMOS™2PowerMOSTransistorChip IPC26N10NR Rev.2.5,2014-10-03Final Data Sheet RevisionHistory IPC26N10NR Revision:2014-10-03,Rev.2.5 Previous Revision Revision Date Subjects (major changes since last revision) 2.5 2014-10-03 Release Final Version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.