IPC218N04N3 INFINEON | Alldatasheet
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MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC218N04N3 DataSheet Rev.2.5 Final Industrial&Multimarket
OptiMOS™3PowerMOSTransistorChip IPC218N04N3 Rev.2.5,2014-07-25Final Data Sheet PowerMOSTransistorChip Drain Gate Source 1Description
- N-channelenhancementmode
- FordynamiccharacterizationrefertothedatasheetofIPB011N04NG
- AQL0.65forvisualinspectionaccordingtofailurecatalogue
- ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C
- Diebond:solderedorglued
- Backsidemetallization:NiVsystem
- Frontsidemetallization:AlCusystem
- Passivation:Nitride+Imide Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS 40 V RDS(on) 1.11) mΩ Die size 5.9 x 3.7 mm2 Thickness 175 µm Type/OrderingCode Package Marking RelatedLinks IPC218N04N3 Chip not defined - 2ElectricalCharacteristicsonWaferLevel atTj=25°C,unlessotherwisespecified Table2 Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 40 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2 - 4 V VDS=VGS,ID=200µA Zero gate voltage drain current IDSS - 0.1 2 µA VGS=0V,VDS=40V Gate-source leakage current IGSS - 2 200 nA VGS=20V,VDS=0V Drain-source on- resistance RDS(on) - 0.52) 503) mΩ VGS=10V,ID=2.0A Reverse diode forward on-voltage VSD - 0.86 1.1 V VGS=0V,IF=1A Internal gate resistance RG - 1.5 - Ω - Avalanche energy, single pulse EAS - - 5254) mJ ID =50 A, RGS =25 Ω 1) packaged in a PG-TO263-7 (see ref. product) 2)typicalbaredieRDS(on);VGS=10Vwhenusedwith4*500µmAl-wedgedouble-stitchbonding 3) limited by wafer test-equipment 4) Wafer tested. For general avalanche capability refer to the datasheet of IPB011N04N G
OptiMOS™3PowerMOSTransistorChip IPC218N04N3 Rev.2.5,2014-07-25Final Data Sheet 3PackageOutlines Figure1OutlineChip,dimensionsinµm
OptiMOS™3PowerMOSTransistorChip IPC218N04N3 Rev.2.5,2014-07-25Final Data Sheet RevisionHistory IPC218N04N3 Revision:2014-07-25,Rev.2.5 Previous Revision Revision Date Subjects (major changes since last revision) 2.5 2014-07-25 Release Final Version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.