IPC171N04N_15 INFINEON | Alldatasheet
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MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC171N04N DataSheet Rev.2.5 Final Industrial&Multimarket
OptiMOS™3PowerMOSTransistorChip IPC171N04N Rev.2.5,2014-06-21Final Data Sheet PowerMOSTransistorChip Drain Gate Source 1Description
- N-channelenhancementmode
- FordynamiccharacterizationrefertothedatasheetofIPB021N04NG
- AQL0.65forvisualinspectionaccordingtofailurecatalogue
- ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C
- Diebond:solderedorglued
- Backsidemetallization:NiVsystem
- Frontsidemetallization:AlSisystem
- Passivation:nitride(onlyonedgestructure) Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS 40 V RDS(on) 2.11) mΩ Die size 5.9 x 2.95 mm2 Thickness 205 µm Type/OrderingCode Package Marking RelatedLinks IPC171N04N Chip not defined - 2ElectricalCharacteristicsonWaferLevel atTj=25°C,unlessotherwisespecified Table2 Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 40 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2.1 3.0 4.0 V VDS=VGS,ID=150µA Zero gate voltage drain current IDSS - 0.1 1 µA VGS=0V,VDS=40V Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on- resistance RDS(on) - 1.12) 1003) mΩ VGS=10V,ID=2.0A Reverse diode forward on-voltage VSD - 1.0 1.3 V VGS=0V,IF=1A 1) packaged in a P-TO263-7 (see ref. product) 2)typicalbaredieRDS(on);VGS=10Vwhenusedwith4x500µmAl-wedgebonding 3) limited by wafer test-equipment
OptiMOS™3PowerMOSTransistorChip IPC171N04N Rev.2.5,2014-06-21Final Data Sheet 3PackageOutlines Figure1OutlineChip,dimensionsinµm
OptiMOS™3PowerMOSTransistorChip IPC171N04N Rev.2.5,2014-06-21Final Data Sheet RevisionHistory IPC171N04N Revision:2014-06-21,Rev.2.5 Previous Revision Revision Date Subjects (major changes since last revision) 2.5 2014-06-21 Release of Final Version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.