IPB95R310PFD7 INFINEON | Alldatasheet

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Technical content

Features

  • Integratedultra-fastbodydiode
  • Best-in-classreverserecoverychargeQrr
  • Best-in-classFOMRDS(on)*Eoss,reducedQg,Ciss,andCoss
  • Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V
  • Integratedfastbodydiode
  • Best-in-classCoolMOS™qualityandreliability
  • Fullyoptimizedportfolio
  • Best-in-classRDS(on)inTHDandSMDpackages
  • ESDprotectionmin.Class2(HBM) Benefits
  • Excellenthardcommutationrobustnessenablingusageinresonant topologies
  • Extrasafetymarginfordesignswithincreasedbusvoltage
  • Enablingincreasedpowerdensitysolutions
  • ImprovedfullloadefficiencyinindustrialSMPSapplications
  • PricecompetitivenessoverpreviousCoolMOS™families
  • ImprovedproductionyieldbyreducingESDrelatedfailures Potentialapplications
  • Suitableforhard&softswitchingtopologies
  • OptimizedforusageinLLCandZVStopologies
  • PFC&LLCapplicationsinLightingandIndustrialSMPS Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj = 25 °C 950 V RDS(on),max 310 mΩ Qg,typ 61 nC ID 17.5 A Eoss @ 500V 4.2 µJ Body diode diF/dt 1300 A/µs Qoss @ 500V 0.14 µC Type/OrderingCode Package Marking RelatedLinks IPB95R310PFD7 PG-TO263-3 95R310D7 see Appendix A

950VCoolMOSªPFD7SJPowerDevice IPB95R310PFD7 Rev.2.1,2022-04-22Final Data Sheet TableofContents

950VCoolMOSªPFD7SJPowerDevice IPB95R310PFD7 Rev.2.1,2022-04-22Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 17.5

11.1 A TC=25°C

TC=100°C Pulsed drain current2) ID,pulse - - 62 A TC=25°C Avalanche energy, single pulse EAS - - 42 mJ ID=2.1A; VDD=50V; see table 10 Avalanche energy, repetitive EAR - - 0.32 mJ ID=2.1A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 2.1 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 125 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - - Ncm - Continuous diode forward current IS - - 12 A TC=25°C Diode pulse current2) IS,pulse - - 62 A TC=25°C Reverse diode dv/dt3) dv/dt - - 70 V/ns VDS=0...400V,ISD<=12A,Tj=25°C see table 8 Maximum diode commutation speed diF/dt - - 1300 A/µs VDS=0...400V,ISD<=12A,Tj=25°C see table 8 Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min 1) Limited by Tj,max. Maximum Duty Cycle D = 0.50 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG

950VCoolMOSªPFD7SJPowerDevice IPB95R310PFD7 Rev.2.1,2022-04-22Final Data Sheet 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 1.00 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint Thermal resistance, junction - ambient for SMD version RthJA - 35 45 °C/W Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wave- & reflow soldering allowed Tsold - - 260 °C reflow MSL1

950VCoolMOSªPFD7SJPowerDevice IPB95R310PFD7 Rev.2.1,2022-04-22Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 950 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 2.5 3 3.5 V VDS=VGS,ID=0.52mA Zero gate voltage drain current IDSS - µA VDS=950V,VGS=0V,Tj=25°C VDS=950V,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.24 0.64 0.31 - Ω VGS=10V,ID=10.4A,Tj=25°C VGS=10V,ID=10.4A,Tj=150°C Gate resistance RG - 1 - Ω f=250kHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 1765 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 23 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 39 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 391 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 13 - ns VDD=400V,VGS=13V,ID=10.4A, RG=5.3Ω ;seetable9 Rise time tr - 10 - ns VDD=400V,VGS=13V,ID=10.4A, RG=5.3Ω ;seetable9 Turn-off delay time td(off) - 61 - ns VDD=400V,VGS=13V,ID=10.4A, RG=5.3Ω ;seetable9 Fall time tf - 4 - ns VDD=400V,VGS=13V,ID=10.4A, RG=5.3Ω ;seetable9 Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 8 - nC VDD=760V,ID=10.4A,VGS=0to10V Gate to drain charge Qgd - 18 - nC VDD=760V,ID=10.4A,VGS=0to10V Gate charge total Qg - 61 - nC VDD=760V,ID=10.4A,VGS=0to10V Gate plateau voltage Vplateau - 4.5 - V VDD=760V,ID=10.4A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

950VCoolMOSªPFD7SJPowerDevice IPB95R310PFD7 Rev.2.1,2022-04-22Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 1.1 - V VGS=0V,IF=10.4A,Tj=25°C Reverse recovery time trr - 146 - ns VR=400V,IF=10.4A,diF/dt=100A/µs; see table 8 Reverse recovery charge Qrr - 0.78 - µC VR=400V,IF=10.4A,diF/dt=100A/µs; see table 8 Peak reverse recovery current Irrm - 10.4 - A VR=400V,IF=10.4A,diF/dt=100A/µs; see table 8

950VCoolMOSªPFD7SJPowerDevice IPB95R310PFD7 Rev.2.1,2022-04-22Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 100 125 150 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[°C/W] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 single pulse 0.01 ZthJC=f(tP);parameter:D=tp/T

950VCoolMOSªPFD7SJPowerDevice IPB95R310PFD7 Rev.2.1,2022-04-22Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 20 V 8 V 10 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 20 V 7 V 10 V 8 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 0.400 0.600 0.800 1.000 10 V 7 V 20 V 6.5 V 6 V 5.5 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[normalized] -50 -25 100 125 150 0.5 1.0 1.5 2.0 2.5 3.0 RDS(on)=f(Tj);ID=10.4A;VGS=10V

950VCoolMOSªPFD7SJPowerDevice IPB95R310PFD7 Rev.2.1,2022-04-22Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 25 °C 150 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 120 V 760 V VGS=f(Qgate);ID=10.4Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10-1 100 101 102 125 °C 25 °C IF=f(VSD);parameter:Tj Diagram12:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 EAS=f(Tj);ID=2.1A;VDD=50V

950VCoolMOSªPFD7SJPowerDevice IPB95R310PFD7 Rev.2.1,2022-04-22Final Data Sheet Diagram13:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -50 -25 100 125 150 850 870 890 910 930 950 970 990 1010 1030 1050 VBR(DSS)=f(Tj);ID=1mA Diagram14:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 100 101 102 103 104 105 Ciss Coss Crss C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 200 400 600 800 1000 Eoss=f(VDS)

950VCoolMOSªPFD7SJPowerDevice IPB95R310PFD7 Rev.2.1,2022-04-22Final Data Sheet 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform VDS IF R g1 R g 2 R g1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

950VCoolMOSªPFD7SJPowerDevice IPB95R310PFD7 Rev.2.1,2022-04-22Final Data Sheet 6PackageOutlines Figure1OutlinePG-TO263-3,dimensionsinmm/inches

950VCoolMOSªPFD7SJPowerDevice IPB95R310PFD7 Rev.2.1,2022-04-22Final Data Sheet 7AppendixA Table11RelatedLinks

  • IFXCoolMOSPFD7950VWebpage:www.infineon.com
  • IFXCoolMOSPFD7950Vapplicationnote:www.infineon.com
  • IFXCoolMOSPFD7950Vsimulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

950VCoolMOSªPFD7SJPowerDevice IPB95R310PFD7 Rev.2.1,2022-04-22Final Data Sheet RevisionHistory IPB95R310PFD7 Revision:2022-04-22,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2022-03-18 Release of final version 2.1 2022-04-22 Modified features Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2022InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.