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IPP80P03P3L-04,IPB80P03P3L-04 Target data sheet OptiMOS-P Power-Transistor Product Summary VDS -30 V RDS(on) max. SMD version 4 mΩ ID -80 A Feature
- P-Channel
- Enhancement mode
- Logic Level
- Automotive AEC Q101 qualified
- Green package (lead free)
- MSL1 up to 260°C peak reflow temperature
- 175°C operating temperature
- Avalanche rated
- dv/dt rated P- TO263 -3-2P- TO262 -3-1 P- TO220 -3-1 Gate pin1 Drain pin 2 Source pin 3 Marking 3P03L04 3P03L04 3P03L04 Type Package Ordering Code IPP80P03P3L-04 P- TO220 -3-1 - IPB80P03P3L-04 P- TO263 -3-2 - IPI80P03P3L-04 P- TO262 -3-1 - Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current 1) TC =25°C TC =100°C ID -80 -80 A Pulsed drain current TC =25°C ID puls -320 Avalanche energy, single pulse ID=-80 A , V DD =-25V, R GS =25Ω EAS 432 mJ Reverse diode dv/dt IS=-80A, V DS =-24V, di/dt=200A/µs, Tjmax=175°C dv/dt -6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC =25°C Ptot 200 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56
IPP80P03P3L-04,IPB80P03P3L-04 Target data sheet Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case R thJC - 0.5 0.75 K/W Thermal resistance, junction - ambient, leaded R thJA - - 62 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V GS =0, ID=-250µA V(BR)DSS -30 - - V Gate threshold voltage, VGS = VDS ID=-430µA VGS(th) -1 -1.5 -2 Zero gate voltage drain current V DS =-30V, VGS =0, Tj=25°C V DS =-30V, VGS =0, Tj=150°C3) IDSS -0.1 -10 -100 µA Gate-source leakage current VGS=±20V, VDS =0 IGSS - ± 10 ± 100 nA Drain-source on-state resistance4) V GS =-4.5V, ID=-50A V GS =-4.5V, ID=-50A, SMD version RDS(on) 6.3 7.6 7.3 mΩ Drain-source on-state resistance4) V GS =-10V, ID=-80A V GS =-10V, ID=-80A, SMD version RDS(on) 3.5 3.2 4.3 1Current limited by bondwire ; with an R thJC = 0.75K/W the chip is able to carry ID= 171A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec. 3Defined by design. Not subject to production test. 4Diagrams are related to straight lead versions
IPP80P03P3L-04,IPB80P03P3L-04 Target data sheet
Electrical Characteristics
Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS≥2IDRDS(on)max , ID=-80A 63 125 - S Input capacitance Ciss V GS =0, VDS =-25V, f=1MHz - 7720 - pF Output capacitance Coss - 2050 - Reverse transfer capacitanceCrss - 1673 - Turn-on delay time td(on) V DD =-15V, VGS =-10V, ID=-1A, R G =6Ω - 30 45 ns Rise time tr - 45 68 Turn-off delay time td(off) - 200 300 Fall time tf - 180 270 Gate Charge Characteristics Gate to source charge Q gs VDD =-24V, ID=-80A - -25 -38 nC Gate to drain charge Q gd - -85 -128 Gate charge total Qg VDD =-24V, ID=-80A, VGS =0 to -10V - -200 -300 Gate plateau voltage V(plateau) VDD =-24V, ID=-80A - -3 - V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - -80 A Inv. diode direct current, pulsed ISM - - -320 Inverse diode forward voltage VSD VGS =0, |IF| = |ID| - -1.1 -1.3 V Reverse recovery time trr VR =-15V, |IF| = |lD |, diF/dt=100A/µs - 60 75 ns Reverse recovery charge Q rr - 75 95 nC
IPP80P03P3L-04,IPB80P03P3L-04 Target data sheet Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BIPP80P03P3L-04, BIPB80P03P3L-04 and BIPI80P03P3L-04, for simplicity the device is referred to by the term IPP80P03P3L-04, IPB80P03P3L-04 and IPI80P03P3L-04 throughout this documentation